Patents by Inventor Jae Hoon Bong

Jae Hoon Bong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing n-doped graphene and electrical component using NHF, and graphene and electrical component thereby
    Patent number: 9472675
    Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.
    Type: Grant
    Filed: April 18, 2014
    Date of Patent: October 18, 2016
    Assignees: Korea Advanced Institute of Science and Technology, Lam Research Corporation
    Inventors: Byung Jin Cho, Jae Hoon Bong, Onejae Sul, Hyungsuk Alexander Yoon
  • Method of Manufacturing N-Doped Graphene and Electrical Component Using NH4F, and Graphene and Electrical Component Thereby
    Publication number: 20150280011
    Abstract: This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NH4F), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NH4F); and (b) exposing the graphene to the ammonium fluoride (NH4F), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.
    Type: Application
    Filed: April 18, 2014
    Publication date: October 1, 2015
    Applicants: Korea Advanced Institute of Science and Technology, Lam Research Corporation
    Inventors: Byung Jin Cho, Jae Hoon Bong, Onejae Sul, Hyungsuk Alexander Yoon