Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: Provided are a recombinant microorganisms having a genetic modification that increases the expression of bacterioferritin, a composition comprising the recombinant microorganism for use in reducing a nitrogen oxide concentration in a sample, and a method of reducing a nitrogen oxide concentration in a sample.

Abstract: A method of reducing a concentration of a nitrogen oxide, the method comprising: contacting a microorganism with a nitrogen oxide-containing sample to reduce the concentration of the nitrogen oxide in the sample, wherein the contacting comprises contacting the microorganism with Fe(II)(L)-NOx in a bioreactor, wherein the Fe(II)(L)-NOx is a complex in which a chelating agent, Fe2+, and NOx are chelated, wherein L is the chelating agent, and wherein NOx is a nitrogen oxide ligand.

Abstract: An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Abstract: A method and apparatus for providing a chart for project schedule management are disclosed. The method of providing a chart for project schedule management may include receiving a user input for at least one task schedule from a user, providing, to a user, a chart including a horizontal axis indicating actual time according to a progress of the at least one task schedule and a vertical axis indicating a target date to complete the at least one task schedule, outputting, on the chart, a project mark related to the at least one task schedule, and outputting an on-time baseline in which the actual time coincides with the target date.

Abstract: A semiconductor device comprises a plurality of pillars on a semiconductor substrate, and a support pattern in contact with at least one side surface of each of the pillars. The support pattern connects the pillars with one another. The support pattern includes a plurality of support holes that expose side surfaces of the pillars. The support holes includes a first support hole and a second support hole that are spaced apart from each other. The pillars have circular cross-sections. A ribbon-like hexagon is obtained in a plan view when connecting an inner sidewall of the first support hole with central points of the cross-sections of the pillars exposed through the first support hole.

Abstract: A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.

Abstract: A semiconductor device comprises a plurality of pillars on a semiconductor substrate, and a support pattern in contact with at least one side surface of each of the pillars. The support pattern connects the pillars with one another. The support pattern includes a plurality of support holes that expose side surfaces of the pillars. The support holes includes a first support hole and a second support hole that are spaced apart from each other. The pillars have circular cross-sections. A ribbon-like hexagon is obtained in a plan view when connecting an inner sidewall of the first support hole with central points of the cross-sections of the pillars exposed through the first support hole.

Abstract: A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.

Abstract: A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.

Abstract: A semiconductor device includes a plurality of pillar structures on a semiconductor substrate, and a support pattern in contact with at least a part of each of the pillar structures, the support pattern connecting the pillar structures with one another, wherein the support pattern includes support holes exposing side surfaces of the pillar structures, the support holes including at least a first support hole and a second support hole that are spaced apart from each other, the first and second support holes having different shapes from each other.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: Disclosed are a voice communication system and a voice communication method which set a subtraction weight for each of a plurality of frequency subbands split based on a particular frequency response characteristic set to the system, calculate a gain function for each frequency subband according to the particular frequency response characteristic based on the subtraction weight for each of the frequency subbands, and improve sound quality of a voice signal by reflecting the calculated gain function.

Abstract: A urine analysis device includes a light emitting part, a light receiving part and a control part. The light emitting part includes a plurality of light emitting diodes. The light emitting diodes provide a light to an inspected object. The inspected object has a plurality of inspected areas. The light receiving part receives the light reflected by the inspected object. The control part drives the light emitting part and receives an electric signal from the light receiving part.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: Disclosed is the system and method to remove noises in voice signals in a voice communication. The at least one embodiment of the present disclosure performs a spectral subtraction (SS) for voice signals based on a gain function by a spectral subtraction apparatus, performs clustering of voice signals consecutive on a frequency axis of a spectrogram for the voice signals in which the spectral subtraction has been already performed to designate one or more clusters, and extracts musical noises by determining continuity of each of the designated clusters on the frequency axis and a time axis of the spectrogram to extract musical noises.

Abstract: A urine analysis device includes a light emitting part, a light receiving part and a control part. The light emitting part includes a plurality of light emitting diodes. The light emitting diodes provide a light to an inspected object. The inspected object has a plurality of inspected areas. The light receiving part receives the light reflected by the inspected object. The control part drives the light emitting part and receives an electric signal from the light receiving part.

Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.