Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.

Abstract: A rotatable shelf apparatus and a refrigerator having the same. The refrigerator having the rotatable shelf apparatus includes a main body in which a storage space is formed, a rotatable shelf provided in the storage space to be rotated in a vertical direction, and a rotation supporting unit fixedly provided in the storage space to rotatably support the rotatable shelf. Therefore, it is possible to control the height of the storage space, to reduce the number of times of attaching and detaching the shelf in accordance with the size of accommodated food items, and to effectively utilize the storage space.

Abstract: A differential gear set includes a pinion gear that at least a groove having a inner planar surface, at least a gear is formed in an exterior circumference thereof and at least a pinion shaft in which an end portion is inserted into the groove such that an end surface faces the inner surface of the groove and a planar portion is formed by cutting off in one side of an exterior circumference thereof corresponding to the interior circumference of the groove.

Abstract: Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.

Abstract: Disclosed herein is an impact modifier formed by graft polymerizing about 45 to about 70% by weight of a rubber polymer with about 30 to about 55% by weight of a methacrylate-based monomer, wherein said rubber polymer is prepared by polymerizing about 0.1 to about 1 part by weight of an antioxidant with about 100 parts by weight of a monomer mixture comprising about 30 to about 45% by weight of a diene-based monomer and about 55 to about 70% by weight of alkyl acrylate. The methacrylate-based resin composition of the present invention using the aforementioned impact modifier may have improved transparency, impact resistance and a good appearance.

Abstract: A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanoscale floating gates compared to conventional ones.

Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: A differential gear set includes a pinion gear that at least a groove having a inner planar surface, at least a gear is formed in an exterior circumference thereof and at least a pinion shaft in which an end portion is inserted into the groove such that an end surface faces the inner surface of the groove and a planar portion is formed by cutting off in one side of an exterior circumference thereof corresponding to the interior circumference of the groove.

Abstract: A location guidance apparatus including a position detecting unit configured to detect a current position of the location guidance apparatus, an input unit configured to input at least one of a path guidance setting mode and path guidance providing mode, a storage unit configured to store position and movement information of the location guidance apparatus, and a control unit configured to store a first position of the location guidance apparatus and to determine a moving path from the first position to a second position of the location guidance apparatus when the path guidance setting mode is input, and to provide path guidance information including a reverse of the moving path including the second position to the first position when the path guidance providing mode is input.

Abstract: A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanosacle floating gates compared to conventional ones.