Abstract: The present invention relates to superabsorbent polymer and a method for preparing the same. According to the method for preparing superabsorbent polymer of the present invention, superabsorbent polymer having improved rewet property and absorption speed can be provided.

Abstract: Provided is a method of preparing a superabsorbent polymer. More specifically, provided is a method of preparing a superabsorbent polymer capable of exhibiting improved initial absorbency and a rapid absorption rate by polymerizing monomers having acidic groups, of which part is neutralized with a basic material including potassium hydroxide, in the presence of an encapsulated foaming agent.

Abstract: A semiconductor memory device includes a stack structure and a slit structure. The stack structure includes insulation layers and conductive layers alternately stacked with the insulation layers. The slit structure is configured to divide the stack structure into memory blocks. A part of the slit structure configured to define one memory block has a dashed shape including a slit region and a bridge region.

Abstract: A semiconductor memory device includes a stack structure and a slit structure. The stack structure includes insulation layers and conductive layers alternately stacked with the insulation layers. The slit structure is configured to divide the stack structure into memory blocks. A part of the slit structure configured to define one memory block has a dashed shape including a slit region and a bridge region.

Abstract: The present disclosure relates to a method for preparing a super absorbent polymer. More specifically, it relates to a method for preparing a super absorbent polymer capable of preparing a super absorbent polymer in which the residual monomer content and the extractable content are simultaneously reduced by adding a reducing agent capable of a redox reaction with a thermal polymerization initiator before drying the hydrogel polymer.

Abstract: The present invention relates to superabsorbent polymer and a method for preparing the same. The present invention can provide a superabsorbent polymer in which a hydrophobic material having an HLB of 0-6, a hydrophilic polymer and a surface cross-linking agent are mixed into a base resin, thereby having improved rewetting characteristics and permeability through surface-modification of the base resin.

Abstract: Provided are a superabsorbent polymer and a preparation method thereof, including preparing a base resin and conducting surface modification of the base resin in the presence of an inorganic filler. The method of preparing the superabsorbent polymer of the present invention may provide a superabsorbent polymer having improved rewetting property and liquid permeability.

Abstract: The present invention relates to super absorbent polymer and a method for preparing the same. According to the super absorbent polymer and preparation method for the same of the present invention, super absorbent polymer having improved rewet property and vortex time can be provided.

Abstract: A two-terminal biristor in which a polysilicon emitter layer is inserted and a method of manufacturing the same are provided. The method of manufacturing the two-terminal biristor according to an embodiment of the present disclosure includes forming a first semiconductor layer of a first type on a substrate, forming a second semiconductor layer of a second type on the first semiconductor layer, forming a third semiconductor layer of the first type on the second semiconductor layer, and forming a polysilicon layer of the first type on the third semiconductor layer.

Abstract: A method of preparing a superabsorbent polymer includes preparing a base resin in which an acrylic acid-based monomer having acidic groups which are at least partially neutralized and an internal crosslinking agent are crosslinked in the presence of a sodium polycarboxylate surfactant; and heating the base resin in the presence of a surface crosslinking agent to carry out surface modification of the base resin, wherein the internal crosslinking agent includes a first epoxy crosslinking agent having an epoxy equivalent weight of 100 g/eq or more to less than 130 g/eq, and a second epoxy crosslinking agent having an epoxy equivalent weight of 130 g/eq or more. The superabsorbent polymer provides improved rewetting property and liquid permeability.

Abstract: A semiconductor channel based neuromorphic synapse device 1 including a trap-rich layer may be provided that includes: a first to a third semiconductor regions which are formed on a substrate and are sequentially arranged; a word line which is electrically connected to the first semiconductor region; a trap-rich layer which surrounds the second semiconductor region; and a bit line which is electrically connected to the third semiconductor region. When a pulse with positive (+) voltage is applied to the word line, a concentration of electrons emitted from the trap-rich layer to the second semiconductor region increases and a resistance of the second semiconductor region decreases. When a pulse with negative (?) voltage is applied to the word line, a concentration of electrons trapped in the trap-rich layer from the second semiconductor region increases and the resistance of the second semiconductor region increases.

Abstract: A method of preparing a superabsorbent polymer includes preparing a base resin in which an acrylic acid-based monomer having acidic groups which are at least partially neutralized and an internal crosslinking agent are crosslinked; and heating the base resin in the presence of a surface crosslinking agent to carry out surface modification of the base resin, wherein the internal crosslinking agent includes a first epoxy crosslinking agent having an epoxy equivalent weight of 100 g/eq or more to less than 130 g/eq, and a second epoxy crosslinking agent having an epoxy equivalent weight of 130 g/eq or more. A superabsorbent polymer having improved rewetting property liquid permeability is also provided.

Abstract: A semiconductor memory device includes a stack structure and a slit structure. The stack structure includes insulation layers and conductive layers alternately stacked with the insulation layers. The slit structure is configured to divide the stack structure into memory blocks. A part of the slit structure configured to define one memory block has a dashed shape including a slit region and a bridge region.

Abstract: Provided are a superabsorbent polymer and a preparation method thereof, including preparing a base resin and conducting surface modification of the base resin in the presence of an inorganic filler. The method of preparing the superabsorbent polymer of the present invention may provide a superabsorbent polymer having improved rewetting property and liquid permeability.

Abstract: The present invention relates to superabsorbent polymer and a method for preparing the same. According to the method for preparing superabsorbent polymer of the present invention, superabsorbent polymer having improved rewet property and absorption speed can be provided.

Abstract: A superabsorbent polymer which has excellent initial absorbency and keeps water from flowing out under pressure even after the passage of a long period of time, in which the superabsorbent polymer keeps water from flowing out under pressure even after the passage of a long period of time to exhibit excellent absorbency, and also has an anti-caking property under conditions of high temperature and high humidity to improve storage stability, is provided. The superabsorbent polymer composition of the present invention may be used to improve physical properties of a variety of diapers, potty training pants, incontinence pads, etc., thereby being applied to production of personal absorbent hygiene products having high absorbency and excellent storage stability under conditions of high temperature and high humidity.

Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

Abstract: Provided is a method of preparing a superabsorbent polymer. More specifically, provided is a method of preparing a superabsorbent polymer capable of exhibiting improved initial absorbency and a rapid absorption rate by polymerizing monomers having acidic groups, of which part is neutralized with a basic material including potassium hydroxide, in the presence of an encapsulated foaming agent.

Abstract: The present invention relates to super absorbent polymer and a method for preparing the same. According to the super absorbent polymer and preparation method for the same of the present invention, super absorbent polymer having improved rewet property and vortex time can be provided.

Abstract: A two-terminal biristor in which a polysilicon emitter layer is inserted and a method of manufacturing the same are provided. The method of manufacturing the two-terminal biristor according to an embodiment of the present disclosure includes forming a first semiconductor layer of a first type on a substrate, forming a second semiconductor layer of a second type on the first semiconductor layer, forming a third semiconductor layer of the first type on the second semiconductor layer, and forming a polysilicon layer of the first type on the third semiconductor layer.