Patents by Inventor Jae Hyouck Choi
Jae Hyouck Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11502710Abstract: A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.Type: GrantFiled: July 20, 2020Date of Patent: November 15, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kang Ta Jo, Seong Jong Cheon, Se Jong Kim, Ho Taek Song, Jang Ho Park, Yoo Sam Na, Jae Hyouck Choi, Young Sik Hur
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Publication number: 20210242892Abstract: A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.Type: ApplicationFiled: July 20, 2020Publication date: August 5, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kang Ta JO, Seong Jong CHEON, Se Jong KIM, Ho Taek SONG, Jang Ho PARK, Yoo Sam NA, Jae Hyouck CHOI, Young Sik HUR
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Patent number: 10924062Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.Type: GrantFiled: October 24, 2018Date of Patent: February 16, 2021Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyu Jin Choi, Jae Hyouck Choi, Je Hee Cho
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Patent number: 10707820Abstract: A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.Type: GrantFiled: October 16, 2018Date of Patent: July 7, 2020Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyu Jin Choi, Jae Hyouck Choi
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Patent number: 10505512Abstract: A tunable inductor circuit includes a first common transmission line having one end connected to a first terminal; a first uncommon transmission line having one end connected to another end of the first common transmission line; a first switch circuit configured to selectively connect one of the other end of the first common transmission line and another end of the first uncommon transmission line to a first common node; a second common transmission line having one end connected to the first common node; a second uncommon transmission line having one end connected to another end of the second common transmission line; and a second switch circuit configured to selectively connect one of the other end of the second common transmission line and another end of the second uncommon transmission line to a second terminal.Type: GrantFiled: November 10, 2017Date of Patent: December 10, 2019Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyu Jin Choi, Jae Hyouck Choi
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Publication number: 20190199291Abstract: A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.Type: ApplicationFiled: October 24, 2018Publication date: June 27, 2019Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Kyu Jin CHOI, Jae Hyouck CHOI, Je Hee CHO
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Publication number: 20190199301Abstract: A power amplifying apparatus includes a first bias circuit that generates a first bias current having a first magnitude, a first amplification circuit connected between a first node and a second node, and that receives the first bias current, amplifies a signal input through the first node, and outputs a first amplified signal to the second node, a second bias circuit that generates a second bias current having a second magnitude that is different from the first magnitude of the first bias current, and a second amplification circuit connected in parallel with the first amplification circuit between the first node and the second node, and that receives the second bias current, amplifies the signal input through the first node, and outputs a second amplified signal to the second node, wherein the second amplification circuit may have a size that is different from a size of the first amplification circuit.Type: ApplicationFiled: October 16, 2018Publication date: June 27, 2019Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Kyu Jin CHOI, Jae Hyouck CHOI
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Publication number: 20180287581Abstract: A tunable inductor circuit includes a first common transmission line having one end connected to a first terminal; a first uncommon transmission line having one end connected to another end of the first common transmission line; a first switch circuit configured to selectively connect one of the other end of the first common transmission line and another end of the first uncommon transmission line to a first common node; a second common transmission line having one end connected to the first common node; a second uncommon transmission line having one end connected to another end of the second common transmission line; and a second switch circuit configured to selectively connect one of the other end of the second common transmission line and another end of the second uncommon transmission line to a second terminal.Type: ApplicationFiled: November 10, 2017Publication date: October 4, 2018Applicant: Samsung Electro-Mechanics Co., LTD.Inventors: Kyu Jin CHOI, Jae Hyouck CHOI
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Publication number: 20180287560Abstract: A dual operating mode power amplifying apparatus, includes a power amplifying circuit configured to comprise a unit amplifier amplifying an input signal; a first bias circuit configured to generate a first bias current of the power amplifying circuit; a second bias circuit configured to generate a second bias current of the power amplifying circuit, the second bias current being a signal independent of the first bias current; a first ballast circuit connected between the first bias circuit and the power amplifying circuit, and configured to transfer the first bias current to the power amplifying circuit; and a second ballast circuit connected between the second bias circuit and the power amplifying circuit, and configured to transfer the second bias current to the power amplifying circuit.Type: ApplicationFiled: October 27, 2017Publication date: October 4, 2018Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventor: Jae Hyouck CHOI
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Patent number: 9843298Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.Type: GrantFiled: January 8, 2016Date of Patent: December 12, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin Nam, Suk Chan Kang, Kwang Du Lee, Jae Hyouck Choi, Kyung Hee Hong, Kyu Jin Choi, Jeong Hoon Kim
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Patent number: 9735745Abstract: A power amplifier apparatus includes: an amplifier configured to amplify an input signal; a sensing circuit connected to the amplifier and configured to sense a bias of the amplifier; and a biasing circuit connected to the sensing circuit and configured to provide a biasing current to the amplifier, wherein the sensing circuit is configured to change the biasing current based on the bias of the amplifier.Type: GrantFiled: March 16, 2016Date of Patent: August 15, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kwang Du Lee, Ho Kwon Yoon, Jong Ok Ha, Kyung Hee Hong, Shinichi Iizuka, Jae Hyouck Choi, Suk Chan Kang
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Patent number: 9705492Abstract: The present invention relates to a switch circuit and a single pole double throw (SPDT) circuit. The switch circuit includes: a MOS transistor transferring or blocking a signal according to a turn on/off operation thereof; a gate resistor connected to a gate of the MOS transistor; and a variable gate resistor circuit increasing a resistance value of the gate resistor when the MOS transistor is changed from a turn-off state to a turn-on state.Type: GrantFiled: December 24, 2013Date of Patent: July 11, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hyouck Choi, Sung Hwan Park
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Patent number: 9667247Abstract: An radio frequency switch according to an example includes a first switching circuit including first switching elements connected in series between an antenna port and a transmission port and operated by a first gate signal, a second switching circuit including second switching elements connected in series between the antenna port and a reception port and operated by a second gate signal, a first shunt circuit connected between the transmission port and a ground and operated by the second gate signal, a second shunt circuit connected between the reception port and the ground and operated by the first gate signal, and a third shunt circuit connected between the reception port and the other end of an inductor grounded at one end and operated by the second gate signal.Type: GrantFiled: December 30, 2015Date of Patent: May 30, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hyouck Choi, Jeong Hoon Kim, Kyu Jin Choi, Suk Chan Kang
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Patent number: 9577583Abstract: A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.Type: GrantFiled: May 8, 2014Date of Patent: February 21, 2017Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Kwang Du Lee, Jeong Hoon Kim, Ho Kwon Yoon, Joong Jin Nam, Kyu Jin Choi, Suk Chan Kang, Jae Hyouck Choi, Kyung Hee Hong
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Publication number: 20160322940Abstract: A power amplifier apparatus includes: an amplifier configured to amplify an input signal; a sensing circuit connected to the amplifier and configured to sense a bias of the amplifier; and a biasing circuit connected to the sensing circuit and configured to provide a biasing current to the amplifier, wherein the sensing circuit is configured to change the biasing current based on the bias of the amplifier.Type: ApplicationFiled: March 16, 2016Publication date: November 3, 2016Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kwang Du LEE, Ho Kwon YOON, Jong Ok HA, Kyung Hee HONG, Shinichi IIZUKA, Jae Hyouck CHOI, Suk Chan KANG
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Publication number: 20160276980Abstract: A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.Type: ApplicationFiled: January 8, 2016Publication date: September 22, 2016Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Joong Jin NAM, Suk Chan KANG, Kwang Du LEE, Jae Hyouck CHOI, Kyung Hee HONG, Kyu Jin CHOI, Jeong Hoon KIM
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Publication number: 20160197607Abstract: An radio frequency switch according to an example includes a first switching circuit including first switching elements connected in series between an antenna port and a transmission port and operated by a first gate signal, a second switching circuit including second switching elements connected in series between the antenna port and a reception port and operated by a second gate signal, a first shunt circuit connected between the transmission port and a ground and operated by the second gate signal, a second shunt circuit connected between the reception port and the ground and operated by the first gate signal, and a third shunt circuit connected between the reception port and the other end of an inductor grounded at one end and operated by the second gate signal.Type: ApplicationFiled: December 30, 2015Publication date: July 7, 2016Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Jae Hyouck Choi, Jeong Hoon Kim, Kyu Jin Choi, Suk Chan Kang
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Patent number: 9331690Abstract: A switching circuit may include a switching circuit unit; a reference voltage unit connected between the switching circuit unit and a signal input terminal and providing a preset reference voltage; and a voltage generating unit dividing a first control voltage provided to the switching circuit unit by a preset magnitude to generate a second control voltage corresponding to the reference voltage, and providing the second control voltage to bodies of the plurality of respective switching devices.Type: GrantFiled: July 1, 2014Date of Patent: May 3, 2016Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jae Hyouck Choi, Kyu Jin Choi, Suk Chan Kang, Jeong Hoon Kim
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Patent number: 9312909Abstract: A RF (Radio Frequency) switch may include: a common port; a first switching unit including a plurality of first switching devices; a second switching; a negative voltage generating unit sensing the high frequency signal from the common port and rectifying the sensed high frequency signal to generate a negative voltage; and a logic circuit unit controlling switching operations of the first and second switching units using the negative voltage provided from the negative voltage generating unit and a positive voltage provided from the outside.Type: GrantFiled: June 26, 2014Date of Patent: April 12, 2016Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Suk Chan Kang, Kyu Jin Choi, Jae Hyouck Choi, Jeong Hoon Kim
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Publication number: 20150348700Abstract: There are provided an on-chip inductor, and a method for manufacturing the same. The on-chip inductor may include: a substrate; an oxide layer formed on the substrate; a spiral-shaped wiring layer formed on the oxide layer; and a shielding layer having a lattice shape interposed between the substrate and the wiring layer.Type: ApplicationFiled: September 9, 2014Publication date: December 3, 2015Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Kyung Hee HONG, Jeong Hoon KIM, Suk Chan KANG, Joong Jin NAM, Kyu Jin Choi, Jae Hyouck Choi