Abstract: A power apparatus including a reducing agent supply control system includes: an engine configured to emit exhaust gas containing nitrogen oxide by burning air and fuel at a preset air-fuel ratio; an exhaust passage configured such that the exhaust gas emitted by the engine moves therethrough; a pressure sensor configured to actually measure the pressure of air which is supplied to the engine; a nitrogen oxide concentration sensor installed on the exhaust passage, and configured to measure the nitrogen oxide (NOx) concentration of the exhaust gas; a reducing agent supply unit configured to supply a reducing agent to the exhaust gas which moves along the exhaust passage; and a control unit configured to determine the amount of reducing agent to be supplied based on information received from the pressure sensor and the nitrogen oxide concentration sensor, and to control the reducing agent supply unit.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer may include: a first sublayer having a damping constant of 0.1 or less; a second sublayer having a perpendicular magnetic anisotropy energy density ranging from 1.0×104 to 1.0×108 erg/cm3; and an insertion layer interposed between the first sublayer and the second sublayer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; an under layer disposed under the MTJ structure; and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer may include: a first sublayer having a damping constant of 0.1 or less; a second sublayer having a perpendicular magnetic anisotropy energy density ranging from 1.0×104 to 1.0×108 erg/cm3; and an insertion layer interposed between the first sublayer and the second sublayer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; an under layer disposed under the MTJ structure; and a perpendicular magnetic anisotropy increasing layer disposed below the under layer and including a material having a different crystal structure from the under layer.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistive element, the magnetoresistive element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes first and second sub-magnetic layers each containing at least iron (Fe) and boron (B), and a concentration of boron (B) contained in the first sub-magnetic layer is different from a concentration of boron (B) contained in the second sub-magnetic layer.

Abstract: A method for fabricating an electronic device including a semiconductor memory may include forming a buffer layer over a substrate, the buffer layer operable to aide in crystal growth of an under layer; forming the under layer over the buffer layer, the under layer operable to aide in crystal growth of a free layer; and forming a Magnetic Tunnel Junction (MTJ) structure including the free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer over the under layer.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory may include an MTJ (Magnetic Tunnel Junction) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer formed under the MTJ structure, wherein the under layer may include metals and oxides of the metals.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

Abstract: A power apparatus including a reducing agent supply control system includes: an engine configured to emit exhaust gas containing nitrogen oxide by burning air and fuel at a preset air-fuel ratio; an exhaust passage configured such that the exhaust gas emitted by the engine moves therethrough; a pressure sensor configured to actually measure the pressure of air which is supplied to the engine; a nitrogen oxide concentration sensor installed on the exhaust passage, and configured to measure the nitrogen oxide (NOx) concentration of the exhaust gas; a reducing agent supply unit configured to supply a reducing agent to the exhaust gas which moves along the exhaust passage; and a control unit configured to determine the amount of reducing agent to be supplied based on information received from the pressure sensor and the nitrogen oxide concentration sensor, and to control the reducing agent supply unit.

Abstract: The present invention relates to a polyvinyl chloride (PVC)-based compound composition, and more specifically, to a PVC-based compound composition that uses a PVC-based copolymer having internal plasticity prepared by suspension polymerization together with a PVC resin, thereby increasing compatibility with the PVC resin to shorten the gelling time, lowering the load at the time of extrusion to increase production in the same process conditions, and partially showing an impact modifier substitution effect.

Abstract: Provided is a pail-pack for welding wire including: an outer cylinder forming a main body; a bottom plate provided inside a lower end of the outer cylinder and having a support part that is bent downward from an edge of the bottom plate to contact an inner circumferential surface of the lower end of the outer cylinder; and a polygonal tube inscribed in the outer cylinder and having a polygonal cross-section containing a welding wire winding layer therein. Accordingly, the pail-pack for welding wire is easy to recycle and carry and has increased strength.

Abstract: Disclosed is a copper-free wire for gas-shielded arc welding featuring superior arc stability, excellent deposition efficiency and high melting rate, wherein the wire has a flat-shaped worked surface, and depressions of a negative direction (toward the center of the wire) with respect to the worked surface formed in a circumferential direction of the surface, a ratio of an actual length (dr) of a circular arc to an apparent length of a circular arc (di) (dr/di) lies within a range of 1.015 to 1.515, and a chemical composition ratio {Cu/(Si+Mn+P+S)}×100 lies within a range of 0.10 to 0.80.

Abstract: Multi-rate optical disc recording method and apparatus wherein data are recorded on the optical disc in accordance with a transfer rate of data, thereby preventing an unnecessary waste of a storage area in the optical disc and also enhancing a recording time of the optical disc. Said method and apparatus exploit a transfer rate detector for detecting a transfer rate of a digital signal generated at a digital signal source. This transfer rate detector allows a rotation velocity controller to rotate the optical disc at a speed corresponding to the transfer rate of the digital signal, in response to the transfer rate of the detected digital signal. Also, the transfer rate detector allows a recording portion to record the digital signal on the optical disc at the detected transfer rate.

Abstract: The present invention relates to a novel pyrimidinone compounds and the pharmaceutical acceptable salts thereof having remarkable antagonistic action against angiotensin II receptor, thereby, being useful in treating cardiovascular disease caused by binding angiotensin II to its receptor.

Abstract: An information recording method which can record audio and/or video information on a recording medium, while protecting previously recorded information from being overwritten. When recording new information on the record medium, the information recording method checks whether an intended recording position for new information corresponds to a start position of a previously recorded information region. If so, the method moves the recording position of new information into a recording termination position of the previously recorded information region.

Abstract: Multi-rate optical disc recording method and apparatus wherein data are recorded on the optical disc in accordance with a transfer rate of data, thereby preventing an unnecessary waste of a storage area in the optical disc and also enhancing a recording time of the optical disc. Said method and apparatus exploit a transfer rate detector for detecting a transfer rate of a digital signal generated at a digital signal source. This transfer rate detector allows a rotation velocity controller to rotate the optical disc at a speed corresponding to the transfer rate of the digital signal, in response to the transfer rate of the detected digital signal. Also, the transfer rate detector allows a recording portion to record the digital signal on the optical disc at the detected transfer rate.