Abstract: An acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and a distal portion that extends from the proximal portion to a free end of the beam, the beam extending generally linearly from the proximal portion toward the free end in a first direction. The beam has a wall portion at or proximate the free end that extends in a second direction generally transverse to the first direction and increases an acoustic resistance of the gap between sensors. An electrode is disposed on or in the proximal portion of the beam.

Abstract: A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.

Abstract: A composition suitable for diagnosing a musculoskeletal disease and a composition suitable for preventing or treating a musculoskeletal disease are disclosed. The composition contains zinc finger protein with KRAB and SCAN domains 8 (Zkscan8) protein, which can be effectively used as an excellent biomarker for obtaining accurate information about the occurrence and progression stages of a musculoskeletal disease, specifically a tendon disease or a ligament disease. The compositions containing Zkscan8 can be effectively used for preventing or treating a musculoskeletal disease through Zkscan8 overexpression.

Abstract: A piezoelectric microelectromechanical system microphone comprises a support substrate, a diaphragm including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the diaphragm, and a compliant anchor formed of a material with a greater compliance than a compliance of the piezoelectric material, the compliant anchor defined in the diaphragm in an anchor region between the piezoelectric material of the diaphragm and the support substrate to improve sensitivity and reduce residual stress impact of the piezoelectric microelectromechanical system microphone.

Abstract: A bulk acoustic wave (BAW) device is provided comprising a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a raised frame structure outside of a middle area of an active domain of the BAW device, the raised frame structure comprising one or more raised frame layer(s). At least one of the raised frame layer(s) comprises a tapered portion tapering in a direction towards the middle area of the active domain. A packaged module comprising such a BAW device is also provided. A wireless mobile device comprising such a packaged module is also provided.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.

Abstract: A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

Abstract: A bulk acoustic wave resonator device comprises a piezoelectric material layer, a first metal layer having a lower surface disposed on the upper surface of the piezoelectric material layer, a second metal layer having an upper surface disposed on the lower surface of the piezoelectric material layer, and an oxide raised frame disposed between the lower surface of the first metal layer and the upper surface of the second metal layer and surrounding a central active region of the bulk acoustic wave resonator device, the central active region having a first side and a second side, the oxide raised frame having a width on the first side of the central active region that is different from the width of the oxide raised frame on the second side of the central active region to improve an operating parameter of the bulk acoustic wave resonator.

Abstract: A ladder filter comprises series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port and shunt bulk acoustic wave resonators electrically connected between adjacent ones of the series arm bulk acoustic wave resonators and ground, each of the arm bulk acoustic resonators including a central active region and a raised frame region outside of the central active region, each of the series arm bulk acoustic resonators including a piezoelectric film, at least one of the series arm bulk acoustic wave resonators including a layer of oxide disposed directly on the piezoelectric film in the raised frame region, and a metal layer disposed directly on the piezoelectric film in the central active region and on the layer of oxide in the raised frame region, the metal layer having a thickness in the raised frame region no greater than in the central active region.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can have a thickness that is between about 0.02 and about 0.4 times the combined thickness H of the bulk acoustic wave device. The first raised frame layer can have a thickness that is between about 0.01 and about 0.2 times the resonant wavelength ? of the bulk acoustic wave device.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can have a thickness that is between about 0.02 and about 0.4 times the combined thickness H of the bulk acoustic wave device. The first raised frame layer can have a thickness that is between about 0.01 and about 0.2 times the resonant wavelength ? of the bulk acoustic wave device.

Abstract: A method performed at an electronic device with one or more processors and memory storing one or more programs includes receiving a plurality of images of a machine readable code. A respective image of the plurality of images corresponds to a distinct wavelength. The method also includes analyzing the respective image of the plurality of images to obtain a respective processed information; combining the respective processed information to obtain combined information; and providing the combined information to at least one program of the one or more programs stored in the memory for processing.

Abstract: Disclosed is a solar cell module. The module includes a solar cell including a plurality of unit battery cells electrically connected to each other via internal connection electrodes; an upper cover disposed on a front face of the solar cell; a light-conversion coating layer coated on an inner face of the upper cover, wherein the light-conversion coating layer includes upconversion nano-particles for absorbing near-infrared rays and emitting light having a wavelength in a visible region; a lower cover disposed on a rear face of the solar cell; a first filling material layer formed between the solar cell and the light-conversion coating layer; and a second filling material layer formed between the solar cell and the lower cover.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave resonators. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.