Patents by Inventor Jae J. Yun

Jae J. Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device with improved unclamped inductive switching capability and process for forming same
    Patent number: 7332750
    Abstract: A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N? doped, P? doped, and P+ doped semiconductor layers, the P? and P+ doped layers having a combined thickness of about 5 ?m to about 12 ?m. Recombination centers comprising noble metal impurities are disposed substantially in the N? and P? doped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an N? doped epitaxial layer on an N+ doped substrate, forming a P? doped layer in the N? doped epitaxial layer, forming a P+ doped layer in the P? doped layer, and forming in the P? and N? doped layers recombination centers comprising noble metal impurities. The P+ and P? doped layers have a combined thickness of about 5 ?m to about 12 ?m.
    Type: Grant
    Filed: September 1, 2000
    Date of Patent: February 19, 2008
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Jifa Hao, John L. Benjamin, Randall L. Case, Jae J. Yun