Abstract: An embodiment thermal management system of a vehicle includes an air supply device that draws and supplies ambient air. An air cycle apparatus connected to the air supply device that compresses or expands the air to be changed to a high or low temperature air. An air distribution device is connected to the air cycle apparatus and a cabin room connected to the air distribution device that receives the high or low temperature air. A first heat-exchanger connected to the air cycle apparatus performs heat-exchange on the high temperature air and a second heat-exchanger connected to the first heat-exchanger and the air cycle apparatus performs heat-exchange on the air. The second heat-exchanger and the air distribution device are selectively connected and the air having heat-exchanged while passing through the second heat-exchanger is selectively supplied to the air distribution device.

Abstract: An energy storage system is disclosed. In an embodiment, the energy storage system includes a battery module including at least one battery cell, and a battery enclosure structured to accommodate the battery module. The battery module includes a case structured to include a first case forming a side of the battery module. The first case includes a first case body forming the side of the battery module, and a vent portion formed in the first case body. The battery enclosure includes an enclosure frame structured to accommodate the battery module, and a wall assembly forming a wall of the battery enclosure and coupled to the enclosure frame. The wall assembly includes a duct module including a duct coupled to the first case and structured to communicate with the vent portion.

Abstract: The present invention relates to a phase conversion unit comprising: a first circuit board having a plurality of first circuit patterns; a plurality of second circuit boards each having a second circuit pattern, a partial area of which overlaps and is connected to one among the plurality of the first circuit patterns; a plurality of movement members for pressing the plurality of second circuit boards toward the first circuit board, moving the second circuit boards in a first direction to change the length by which the first circuit patterns and the second circuit pattern overlap each other, and thereby converting a phase through the changed length; and a housing disposed on the first circuit board and receiving the plurality of second circuit boards and the plurality of movement members.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided is a phase transformation method performed by a phase shifter including a support frame, a plurality of phase transformation units on the support frame, an operation unit connected to the plurality of phase transformation units to synchronize phases, which are to be transformed through the plurality of phase transformation units, with each other, and a driving unit configured to operate the operation unit, wherein each of the plurality of phase transformation units includes a first circuit pattern, and a second circuit pattern connected to the first circuit pattern while a region of the second circuit pattern overlaps the first circuit pattern, and a length of the region of the second circuit pattern overlapping the first circuit pattern changes when the operation unit is operated.

Abstract: An embodiment method of building a battery state of health (SOH) estimation model includes applying, by an optimization server, an error of a model voltage, an error of a measured voltage, a capacity, or a resistance of a battery mounted in a vehicle as an objective function and performing error minimization processing to derive optimal parameters of the battery.

Abstract: A hydrogen supply method includes a two-side heat exchange mode in which both introducing a second fluid into a hydrogen storage part after the second fluid exchanges heat with a first fluid in a second heat exchanger in a state in which a compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in a thermal device are performed. The method also includes a one-side heat exchange mode in which one of introducing the second fluid into the hydrogen storage part after the second fluid exchanges heat with the first fluid in the second heat exchanger in a state in which the compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in the thermal device is performed.

Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Abstract: Disclosed is a semiconductor memory device including a peripheral gate structure on a substrate, bitlines disposed on the peripheral gate structure and extending in a first direction, a protruding insulating pattern including channel trenches, extending in a second direction intersecting the first direction, channel structures disposed on the bitlines in the channel trenches and including a metal oxide, first wordlines disposed on the channel structures and extending in the second direction, second wordlines disposed on the channel structures, extending in the second direction, and spaced apart from the first wordlines in the first direction, landing pads disposed on the channel structures and connected to the channel structures, pad separation patterns disposed on the protruding insulating pattern and separating the landing pads, first passage patterns connected to the protruding insulating pattern through pad separation patterns and formed of an oxide-based insulating material, and data storage patterns dis

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on a winding axis to define a core and an outer circumference. The first electrode includes a first active material portion coated with an active material layer and a first uncoated portion not coated with an active material layer along a winding direction. At least a part of the first uncoated portion is defined as an electrode tab by itself. The first uncoated portion includes a first portion adjacent to the core of the electrode assembly, a second portion adjacent to the outer circumference of the electrode assembly, and a third portion interposed between the first portion and the second portion. The first portion or the second portion has a smaller height than the third portion in the winding axis direction.

Abstract: A gas diffuser plate in a cyclic deposition chamber is disclosed. The gas diffuser plate as fabricated comprises a substrate diffuser plate having a substrate emissivity and a coating formed on the substrate diffuser plate. The gas diffuser plate having the substrate diffuser plate coated with the coating has an emissivity higher than the substrate emissivity. The coating comprises a first layer formed on the substrate diffuser plate and comprising a first material configured to modulate the emissivity of the gas diffuser plate, and a second layer comprising a second corrosion-resistant material. The first material comprises titanium nitride oxide (TiNxOy). The emissivity of the gas diffuser plate is at least partially based on the ratio of nitrogen and oxygen in TiNxOy.

Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.

Abstract: Disclosed is an electrode assembly, a battery, and a battery pack and a vehicle including the same. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes an uncoated portion at a long side end thereof and exposed out of the separator along a winding axis direction of the electrode assembly. A part of the uncoated portion is bent in a radial direction of the electrode assembly to form a bending surface region that includes overlapping layers of the uncoated portion, and in a partial region of the bending surface region, the number of stacked layers of the uncoated portion is 10 or more in the winding axis direction of the electrode assembly.

Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.

Abstract: A foil tab forming apparatus forms at least one foil tab of a positive electrode foil tab and a negative electrode foil tab respectively provided at a top portion and a bottom portion of an electrode assembly. The foil tab forming apparatus includes a pre-forming jig configured to bend the foil tab by pressing the foil tab, while moving in a direction from an outer circumferential portion of the electrode assembly to a winding center portion of the electrode assembly and a forming jig configured to press the foil tab that has been primarily bent by the pre-forming jig, by moving along a direction parallel to a winding axis of the electrode assembly.

Abstract: A display device includes a substrate including a pixel region and a peripheral region. A plurality of pixels is disposed in the pixel region of the substrate. Each of the plurality of pixels includes a light emitting element. Data lines and scan lines are connected to each of the plurality of pixels. A power line is configured to supply power to the plurality of pixels. The power line includes a plurality of first conductive lines and a plurality of second conductive lines intersecting the plurality of first conductive lines. The plurality of second conductive lines is arranged in a region between adjacent light emitting elements of the plurality of pixels. At least some of the plurality of second conductive lines extend in a direction oblique to a direction of extension of the data lines or the scan lines.

Abstract: A semiconductor device structure, for example a 3D structure, and a method for fabricating a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for manufacturing thereof, that comprise interposer, interlayer, and/or heat dissipater configurations that provide for low cost, increased manufacturability, and high reliability.

Abstract: An apparatus for manufacturing a secondary battery includes: an index table configured to receive a secondary battery cell, the secondary battery cell including an electrode assembly, a can accommodating the electrode assembly, and an electrode tab between the electrode assembly and the can to electrically connect the electrode assembly to the can; a laser scanner configured to irradiate laser onto an outer surface of the can to weld the electrode tab to the can; and a controller configured to variably control the laser scanner according to an operation of the index table.

Abstract: The present disclosure provides a method for preparing a vinyl chloride-based polymer, the method including a step of injecting an ionizable normal salt and polymerizing a vinyl chloride monomer in the presence of one or more emulsifiers and a polymerization initiator, wherein the ionizable normal salt includes a carbonate metal salt or a sulfite metal salt, and the ionizable normal salt is continuously injected in an amount of 70 to 1200 ppm based on the total weight of the vinyl chloride monomer when a polymerization conversion rate is in a range of 0% to 20%. The method capable of preparing a vinyl chloride-based polymer suitable as an eco-friendly material, while not affecting the rate of polymerization reaction and decreasing the generation amount of total volatile organic compounds by controlling the injection time, injection amount and kind of the ionizable normal salt, is provided.