Abstract: A method of mitigating motion sickness in a passenger including learning a motion sickness prediction model based on state information of a vehicle or the passenger, reaction information of the passenger, and motion sickness-related information, predicting reactions of the passenger to a current state of the vehicle or the passenger and possibility of motion sickness using the learned motion sickness prediction model, and providing information on the motion sickness mitigation methods to the passenger or controlling the vehicle based on the predicted reactions of the passenger and possibility of motion sickness. The motion sickness-related information includes one or more of a determination result of whether motion sickness occurs to the passenger, motion sickness state information, and motion sickness reaction information.

Abstract: The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S10) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate (100) to form a first amorphous silicon layer (310b), and a second step (S20) of providing a first gas containing silicon on the substrate (100) having the first amorphous silicon layer (310b) formed thereon to form a second amorphous silicon layer (300a).

Abstract: The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S10) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate (100) to form a first amorphous silicon layer (310b), and a second step (S20) of providing a first gas containing silicon on the substrate (100) having the first amorphous silicon layer (310b) formed thereon to form a second amorphous silicon layer (300a).