Patents by Inventor Jae Moo Kim
Jae Moo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240092141Abstract: An air conditioning device for a vehicle includes: a housing having an inside divided into an inflow space, a heat exchange space, and an outflow space, which are straightly arranged, and having a plurality of discharge ports, which communicates with an interior, at the inflow space; a blowing unit disposed at the inflow space of the housing and configured to blow air; a heat exchange unit disposed at the heat exchange space of the housing and configured to adjust a temperature of conditioned air by exchanging heat with air; and an opening-closing door disposed at the outflow space of the housing and configured to open and close the plurality of discharge ports such that conditioned air at an adjusted temperature selectively flows to the plurality of discharge ports. The air conditioning device adjusts the temperature of conditioned air for respective modes and reduces a flow resistance of air.Type: ApplicationFiled: March 8, 2023Publication date: March 21, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DOOWON CLIMATE CONTROL CO., LTD.Inventors: Kwang Ok Han, Young Tae Song, Yong Chul Kim, Gee Young Shin, Su Yeon Kang, Jae Sik Choi, Dae Hee Lee, Byeong Moo Jang, Ung Hwi Kim, Jae Won Cha, Won Jun Joung, Byung Guk An
-
Publication number: 20240088177Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventors: Hyung June YOON, Jong Eun KIM, Jong Chae KIM, Jae Won LEE, Jae Hyung JANG, Hoon Moo CHOI
-
Publication number: 20240067770Abstract: A polythiol composition according to exemplary embodiments includes: a polythiol-based compound; and a benzyl halide-based reaction regulator in an amount of 10 ppm to 2,000 ppm based on a weight of the polythiol-based compound. The reaction rate of the polythiol-based compound and an isocyanate-based compound may be controlled through the reaction regulator to inhibit a generation of stria phenomenon.Type: ApplicationFiled: September 2, 2021Publication date: February 29, 2024Inventors: Jae Young PAI, Jung Hwan MYUNG, Jeong Moo KIM, Hyuk Hee HAN, Kyeong Hwan YOU
-
Patent number: 9755106Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.Type: GrantFiled: March 6, 2015Date of Patent: September 5, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
-
Publication number: 20160380157Abstract: A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The LED includes a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector including a first laminate structure including alternately stacked SiO2 and Nb2O5 layers. The first laminate structure of the first distributed Bragg reflector is configured to reflect at least 90% of a first wavelength range of blue light emitted from the light emitting structure.Type: ApplicationFiled: September 12, 2016Publication date: December 29, 2016Inventors: Duk Il SUH, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
-
Publication number: 20150179879Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.Type: ApplicationFiled: March 6, 2015Publication date: June 25, 2015Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
-
Publication number: 20150144981Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.Type: ApplicationFiled: January 28, 2015Publication date: May 28, 2015Inventors: Duk Il Suh, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
-
Patent number: 9030090Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.Type: GrantFiled: February 19, 2011Date of Patent: May 12, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
-
Patent number: 8963183Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.Type: GrantFiled: February 6, 2013Date of Patent: February 24, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Duk Il Suh, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang-Hyun Oh, Jin Woong Lee
-
Patent number: 8525212Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad.Type: GrantFiled: December 7, 2010Date of Patent: September 3, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Kyoung Wan Kim, Ye Seul Kim, Jeong Hee Yang, Jae Moo Kim
-
Publication number: 20130134867Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.Type: ApplicationFiled: February 19, 2011Publication date: May 30, 2013Applicant: Seoul Opto Device Co., Ltd.Inventors: Jeong Hee Yang, Kyoung Wan Kim, Yeo Jin Yoon, Jae Moo Kim, Keum Ju Lee
-
Patent number: 8373188Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: GrantFiled: May 4, 2011Date of Patent: February 12, 2013Assignee: Seoul Opto Device Co., Ltd.Inventors: Duk Il Suh, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
-
Publication number: 20120025244Abstract: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.Type: ApplicationFiled: May 4, 2011Publication date: February 2, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Duk Il SUH, Jae Moo KIM, Kyoung Wan KIM, Yeo Jin YOON, Ye Seul KIM, Sang Hyun OH, Jin Woong LEE
-
Publication number: 20110156086Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad.Type: ApplicationFiled: December 7, 2010Publication date: June 30, 2011Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kyoung Wan KIM, Ye Seul KIM, Jeong Hee YANG, Jae Moo KIM