Abstract: There is provided a method for the fabrication of electroluminescence device, comprising the steps of: forming a lower electrode with a predetermined pattern on a substrate: forming a first insulation layer on the lower electrode atop the substrate, in a state of grounding the lower electrode; forming a luminescent layer on the first insulation layer; forming a second insulation film on the luminescent layer; and forming an upper electrode with a predetermined on the second insulation layer. For formation of the first insulation layer, a ferroelectric material is deposited by a sputtering process employing a sputtering apparatus consisting broadly of a vacuum chamber and an external limiter. The transparent lower electrode is electrically connected with the external limiter and grounded through it.