Abstract: An organic light-emitting display apparatus includes a flexible substrate. The organic light-emitting display apparatus includes a first plastic layer. A first barrier layer is formed on the first plastic layer. A second plastic layer is formed on the first barrier layer. An organic light-emitting device layer is formed on the second plastic layer. A thin film encapsulating layer encapsulates the organic light-emitting device layer. The first barrier layer is patterned to correspond to an area where the organic light-emitting device layer is formed.

Abstract: A method of manufacturing a substrate for a display device includes forming a first organic layer on a base substrate; forming an inorganic layer on the first organic layer; and forming a second organic layer on the inorganic layer, where the second organic layer includes transition metal particles.

Abstract: An organic light-emitting device including a barrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes a barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer may be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has a refractive index of 1.81 to 1.85.

Abstract: A thin-film transistor (TFT) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate. The first barrier layer includes a first silicon oxide layer and a first silicon nitride layer. A second barrier layer is formed on the first barrier layer. The second barrier layer includes a second silicon oxide layer and a second silicon nitride layer. A TFT layer is formed on the second barrier layer. The second silicon oxide layer is disposed adjacent to the TFT layer.

Abstract: A display device according to an exemplary embodiment of the present invention includes a display portion including a plurality of display pixels displaying an image and a dummy portion including a plurality of dummy pixels formed in a periphery region of the display portion. An electrostatic test element group (TEG) may be formed in at least one of the dummy pixels.

Abstract: An organic light-emitting device including a harrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes as barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer in be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has refractive index of 1.81 to 1.85.

Abstract: Provided is an organic light-emitting diode (OLED) display including: first and second plastic layers; a first barrier layer and a first intermediate layer each positioned between the first and second plastic layers; and an OLED layer formed on the second plastic layer. The first barrier layer comprises silicon nitride.

Abstract: A display device includes a substrate, and a group pixel on the substrate, the group pixel comprising at least two pixels that represent the same color, wherein in the group pixel, a distance between the pixels is smaller than a distance between adjacent pixels of different group pixels.

Abstract: An organic light-emitting device including a barrier layer that includes a silicon oxide layer and a silicon-rich silicon nitride layer. The organic light-emitting device includes a flexible substrate that includes a barrier layer and plastic films disposed under and over the barrier layer. The barrier layer includes a silicon-rich silicon nitride layer and a silicon oxide layer. The order in which the silicon-rich silicon nitride layer and the silicon oxide layer are stacked is not limited and the silicon oxide layer may be first formed and then the silicon-rich silicon nitride layer may be stacked on the silicon oxide layer. The silicon-rich silicon nitride layer has a refractive index of 1.81 to 1.85.

Abstract: An organic light emitting diode display includes a flexible substrate, an organic light emitting diode disposed over the flexible substrate, and an encapsulation film disposed over the flexible substrate to encapsulate the organic light emitting diode, with the organic light emitting diode interposed between the encapsulation film and the flexible substrate. A thermal conduction layer contacts the flexible substrate, wherein the thermal conduction layer faces the organic light emitting diode and the flexible substrate is interposed between the thermal conduction layer and the organic light emitting diode. A first film is disposed over the encapsulation film, and a second film is disposed over the thermal conduction layer.

Abstract: A method of manufacturing an OLED display includes: forming an organic light emitting element on a first substrate; forming, on the organic light emitting element, a thin film encapsulation layer that seals the organic light emitting element with the first substrate; providing a second substrate; forming a flexible protection layer on the second substrate; attaching the first substrate and the second substrate to each other; and separating the second substrate from the flexible protection layer.

Abstract: A method of manufacturing a substrate for a display device includes forming a first organic layer on a base substrate; forming an inorganic layer on the first organic layer; and forming a second organic layer on the inorganic layer, where the second organic layer includes transition metal particles.

Abstract: An organic light emitting diode display includes: a base film made of plastic; a thin film transistor and an organic light emitting diode formed on the base film; and a carbon nanotube thin film disposed among the base film, the thin film transistor, and the organic light emitting diode.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: An organic light-emitting display apparatus includes a flexible substrate. The organic light-emitting display apparatus includes a first plastic layer. A first barrier layer is formed on the first plastic layer. A second plastic layer is formed on the first barrier layer. An organic light-emitting device layer is formed on the second plastic layer. A thin film encapsulating layer encapsulates the organic light-emitting device layer. The first barrier layer is patterned to correspond to an area where the organic light-emitting device layer is formed.

Abstract: Provided is an organic light-emitting diode (OLED) display including: a first plastic layer; a first barrier layer formed on the first plastic layer; a first intermediate layer formed on the first barrier layer; a second plastic layer formed on the intermediate layer; an OLED layer formed on the second plastic layer; and a thin-film encapsulation layer encapsulating the OLED layer.

Abstract: Provided is an organic light-emitting diode (OLED) display including: first and second plastic layers; a first barrier layer and a first intermediate layer each positioned between the first and second plastic layers; and an OLED layer formed on the second plastic layer. The first barrier layer comprises silicon nitride.

Abstract: A substrate for a display apparatus includes a barrier layer disposed on a base substrate. The barrier layer includes a silicon oxide layer, and the silicon oxide layer includes a first part and a second part along a thickness direction of the barrier layer. The amount of silicon in the first part is different from the amount of silicon in the second part.

Abstract: A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.

Abstract: A thin-film transistor (TFT) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate. The first barrier layer includes a first silicon oxide layer and a first silicon nitride layer. A second barrier layer is formed on the first barrier layer. The second barrier layer includes a second silicon oxide layer and a second silicon nitride layer. A TFT layer is formed on the second barrier layer. The second silicon oxide layer is disposed adjacent to the TFT layer.