Abstract: A duty cycle correction circuit includes a duty correction circuit, an information generation circuit and a duty control circuit. The duty correction circuit corrects a duty rate of an input clock signal based on a duty control code to generate an output clock signal. The information generation circuit compares a difference between operation power voltages based on an operation mode to generate voltage information. The duty control circuit receives the voltage information from the information generation circuit and generates the duty control code that includes the voltage information based on a duty rate of the output clock signal.

Abstract: The present invention relates to an indium precursor compound, a method of preparing a thin film using the same, and a board prepared using the same. More particularly, the present invention relates to an indium precursor compound represented by Chemical Formula 1, a method of preparing a thin film using the same, and a board prepared using the same. According to the present invention, a uniform thin film may be formed, productivity may be increased due to an increased deposition rate, thermal stability and storage stability may be excellent, and an effect of easy handling may be obtained.

Abstract: Disclosed are a metal thin film precursor composition, a method of forming a thin film using the metal thin film precursor composition, and a semiconductor substrate fabricated using the method. The metal thin film precursor composition includes a metal thin film precursor compound and a growth regulator including a predetermined terminal group and structure. In a thin film deposition process, by using the metal thin film precursor composition, side reactions may be suppressed and thin film growth rate may be controlled appropriately. Since process by-products in a thin film are removed, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.

Abstract: The present disclosure relates to an antibody binding specifically to CD55 or an antigen-binding fragment thereof; and a composition for preventing, treating and/or diagnosing cancer containing the same. The antibody of the present disclosure may be used as an effective therapeutic composition for various CD55-mediated diseases since it shows high binding ability and inhibitory effect for the CD55 protein which promotes tumor growth by inhibiting the complement immune mechanism. In addition, the antibody of the present disclosure may be usefully used as an effective therapeutic adjuvant that fundamentally removes drug resistance and remarkably improves therapeutic responsiveness in various diseases in which resistance to therapeutic agents with CDC (complement-dependent cytotoxicity) as a mechanism of action has been induced due to overexpression of CD55.

Abstract: The present invention relates to an auxiliary precursor, a thin film precursor composition, a method of forming a thin film using the thin film precursor composition, and a semiconductor substrate fabricated using the method. The present invention provides the thin film precursor composition including a thin film precursor compound and a compound having a predetermined structure that exhibits reaction stability as the auxiliary precursor. By using the thin film precursor composition in a thin film deposition process, side reactions may be suppressed, and thin film growth rate may be appropriately controlled. In addition, since process by-products are removed from a thin film, even when a thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved.

Abstract: An orthodontic wire bending device includes a providing part, a bending unit and a cutting part. The providing part is configured to provide a wire. The bending unit is disposed at a front side of the providing part, and includes a fixing part and a bending part. The fixing part is configured to fix the wire. The bending part is configured to bend the wire fixed by the fixing part. The cutting part is configured to cut the wire bent by the bending part. The bending part includes a bending module, and the bending module is rotated along a circumferential direction or moves along a direction to make contact with at least one side of the wire for bending the wire.

Abstract: Provided herein are protective membranes for lithography that include a core layer including carbon, an interface layer on the core layer, and a protective layer on the interface layer. The interface layer includes a reactive group bonded to a carbon atom of the core layer and the reactive group includes oxygen or nitrogen. The protective layer includes an element “M”, and the element “M” is bonded to the oxygen or nitrogen of the reactive group.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a growth inhibitor for forming a pellicle-protective thin film, a method of forming a pellicle-protective thin film using the growth inhibitor, and a mask fabricated by the method. More particularly, the growth inhibitor for forming a pellicle-protective thin film according to the present invention is a compound presented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

Abstract: The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.

Abstract: Disclosed is an apparatus and method of preparing synthetic fuel using natural gas extracted from a stranded gas field on land or at sea as a raw material through a compact GTL process or a GTL-FPSO process. A parallel-type gas purification unit for controlling a molar ratio of synthetic gas and a concentration of carbon dioxide in the synthetic gas, in which a CO2 separation device and a bypass unit are disposed in parallel, is provided and, thus, the gas purification unit may prepare the synthetic gas by a steam carbon dioxide reforming (SCR) reaction using natural gas having different CO2 contents of various stranded gas fields and then supply the synthetic gas having an optimum composition suitable for a Fischer-Tropsch synthesis.

Abstract: Disclosed is an apparatus and method of preparing synthetic fuel using natural gas extracted from a standard gas field on land or at sea as a raw material through a compact GTL process or a GTL-FPSO process. A parallel-type gas purification unit for controlling a molar ratio of synthetic gas and a concentration of carbon dioxide in the synthetic gas, in which a CO2 separation device and a bypass unit are disposed in parallel, is provided and, thus, the gas purification unit may prepare the synthetic gas by a steam carbon dioxide reforming (SCR) reaction using natural gas having different CO2 contents of various standard gas fields and then supply the synthetic gas having an optimum composition suitable for a Fischer-Tropsch synthesis reaction to prepare the synthetic fuel.

Abstract: The present invention relates to a core-shell cobalt catalyst used for a Fischer-Tropsch synthesis reaction and a method for preparing the same. More particularly, it relates to a cobalt catalyst, which has a core-shell structure including a cobalt-supported and sintered alumina particle as a core and a zeolite powder coated on the surface of the alumina particle to a thickness of 50 ?m or greater through mechanical alloying as a shell and is used to prepare hydrocarbons with high octane numbers through a Fischer-Tropsch synthesis reaction, and a method for preparing the same.

Abstract: The present disclosure relates to a shell-and-multi-triple concentric-tube reactor and a shell-and-multi-triple concentric-tube heat exchanger, and to a shell-and-multi-triple concentric-tube reactor and a shell-and-multi-triple concentric-tube heat exchanger which provide a new type of reactor and heat exchanger, thereby maximizing catalyst performance and improving performance of the reactor by optimizing heat exchange efficiency and a heat flow, uniformly distributing a reactant, and increasing a flow rate of the reactant, and accordingly making the reactor and the heat exchanger compact.

Abstract: A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

Abstract: The present invention relates to a method for preparing a synthetic fuel on a vessel above a stranded gas field or an oil & gas field by a GTL-FPSO process, more particularly to a method for preparing a synthetic fuel with superior economic feasibility, productivity and efficiency using a compact GTL (gas to liquid) apparatus that can be used for a stranded gas field or an oil & gas field and an FPSO (floating production, storage and offloading) process under a condition optimized for the ratio of carbon dioxide in the stranded gas field or the oil & gas field and an apparatus for the same.

Abstract: A nickel-supported catalyst for combined steam and carbon dioxide reforming, as a catalyst which is used in a process of preparing a synthesis gas by combined steam and carbon dioxide reforming with natural gas, is provided. More particularly, in the nickel-supported catalyst, nickel is supported as an active metal on a lanthanum oxide support.

Abstract: The present disclosure relates to a shell-and-multi-double concentric-tube reactor and a shell-and-multi-double concentric-tube heat exchanger, and to a shell- and-multi-double concentric-tube reactor and a shell-and-multi-double concentric-tube heat exchanger which provide a new type of reactor and a heat exchanger, thereby maximizing catalyst performance and improving performance of the reactor by optimizing heat exchange efficiency and a heat flow, uniformly distributing a reactant, and increasing a flow rate of the reactant, and accordingly making the reactor and the heat exchanger compact.

Abstract: The present disclosure relates to a shell-and-multi-triple concentric-tube reactor and a shell-and-multi-triple concentric-tube heat exchanger, and to a shell-and-multi-triple concentric-tube reactor and a shell-and-multi-triple concentric-tube heat exchanger which provide a new type of reactor and heat exchanger, thereby maximizing catalyst performance and improving performance of the reactor by optimizing heat exchange efficiency and a heat flow, uniformly distributing a reactant, and increasing a flow rate of the reactant, and accordingly making the reactor and the heat exchanger compact.