Patents by Inventor Jae-uk Chu

Jae-uk Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190309197
    Abstract: A thermal adhesive containing a resin component includes an epoxy resin and an inorganic filler, where the inorganic filler includes tetrapod zinc oxide and alumina nanofiber, where the inorganic filler may further include at least one selected from among spherical alumina, AlN and BN, and where the resin component may further include a curing agent and a catalyst.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 10, 2019
    Inventors: Jae-Uk CHU, Chang-Kook JANG, Seon-Ja SONG, Seung-Won SONG
  • Patent number: 9920231
    Abstract: Provided is a thermal compound composition having heat dissipation and electrical insulation properties, where the thermal compound composition includes a Cu—CuO composite filler having a Cu core and a shell composed of CuO having a whisker crystal structure. The CuO having the whisker crystal structure is prepared by reacting Cu particles in a basic solution so that an outer shell thereof is grown into whisker-shaped CuO.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: March 20, 2018
    Assignee: YOUNGYIEL PRECISION CO., LTD.
    Inventors: Dong-Wook Chu, Jae-Uk Chu, Dong-Woo Lee, Chang-Hyun Um
  • Publication number: 20170292052
    Abstract: Provided is a thermal compound composition having heat dissipation and electrical insulation properties, where the thermal compound composition includes a Cu—CuO composite filler having a Cu core and a shell composed of CuO having a whisker crystal structure. The CuO having the whisker crystal structure is prepared by reacting Cu particles in a basic solution so that an outer shell thereof is grown into whisker-shaped CuO.
    Type: Application
    Filed: March 14, 2017
    Publication date: October 12, 2017
    Inventors: Dong-Wook CHU, Jae-Uk CHU, Dong-Woo LEE, Chang-Hyun UM
  • Patent number: 8083905
    Abstract: The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg /cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process. A fuel cell using as the carbon nanotubes for its electrode provides improved performance.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: December 27, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Won-bong Choi, Jae-uk Chu, Chan-ho Pak, Hyuk Chang
  • Publication number: 20100018851
    Abstract: Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process.
    Type: Application
    Filed: July 29, 2009
    Publication date: January 28, 2010
    Applicant: SAMSUNG SDI Co., Ltd.
    Inventors: Won-bong CHOI, Jae-uk Chu, Chan-ho Park, Hyuk Chang
  • Patent number: 7585584
    Abstract: Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: September 8, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Won-bong Choi, Jae-uk Chu, Chan-ho Pak, Hyuk Chang
  • Patent number: 7378328
    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: May 27, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
  • Publication number: 20060252276
    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
    Type: Application
    Filed: February 13, 2006
    Publication date: November 9, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
  • Patent number: 7015500
    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
    Type: Grant
    Filed: February 10, 2003
    Date of Patent: March 21, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
  • Publication number: 20040018416
    Abstract: Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process.
    Type: Application
    Filed: June 24, 2003
    Publication date: January 29, 2004
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Won-Bong Choi, Jae-Uk Chu, Chan-Ho Pak, Hyuk Chang
  • Publication number: 20030170930
    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
    Type: Application
    Filed: February 10, 2003
    Publication date: September 11, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu