Patents by Inventor Jae Wan Park

Jae Wan Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230141924
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: December 26, 2022
    Publication date: May 11, 2023
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20230136538
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Application
    Filed: December 26, 2022
    Publication date: May 4, 2023
    Applicant: SOULBRAIN CO., LTD.
    Inventors: Jung Hun LIM, Jin Uk LEE, Jae Wan PARK
  • Publication number: 20230137219
    Abstract: An image processing system according to an embodiment includes a spatial map server that generates a spatial map by using a point cloud and viewpoint videos from first real space images obtained by scanning real space, a location recognition server that stores location recognition data extracted from the spatial map, and compares the location recognition data with a second real space image obtained through a device of an AR user to identify location information of the device of the AR user on the spatial map, and a communication server that stores and provides the location information of the device of the AR user on the spatial map and a location of a VR user on the spatial map, and displays at least one or more AR users and at least one VR user on the spatial map in synchronization with each other by using the location information and the location.
    Type: Application
    Filed: December 8, 2021
    Publication date: May 4, 2023
    Inventors: Seung Gyun KIM, Tae Yun SON, Jae Wan PARK
  • Patent number: 11634632
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: April 25, 2023
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Patent number: 11634633
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: April 25, 2023
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Patent number: 11634634
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: April 25, 2023
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Patent number: 11615574
    Abstract: A system for rendering 6 degree-of-freedom virtual reality according to an embodiment of the present disclosure includes a visibility test module performing a visibility test for determining whether a current point of interest where a main viewpoint is directed is visible for each of a plurality of reference viewpoints and generating visibility information by identifying the number of invisible fragments of each reference viewpoint according to the performance result, a reference viewpoint selection module selecting a final reference viewpoint for a rendering process for a current frame based on the visibility information for each of the plurality of reference viewpoints and a preset selection criterion, and a rendering process module performing an image-based rendering process by using a color image and a depth image corresponding to the final reference viewpoint.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: March 28, 2023
    Assignee: MAXST CO., LTD.
    Inventors: Tae Hong Jeong, Kyu Sung Cho, Tae Yun Son, Jae Wan Park
  • Patent number: 11566178
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: January 31, 2023
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Publication number: 20220414966
    Abstract: A system for rendering 6 degree-of-freedom virtual reality according to an embodiment of the present disclosure includes a visibility test module performing a visibility test for determining whether a current point of interest where a main viewpoint is directed is visible for each of a plurality of reference viewpoints and generating visibility information by identifying the number of invisible fragments of each reference viewpoint according to the performance result, a reference viewpoint selection module selecting a final reference viewpoint for a rendering process for a current frame based on the visibility information for each of the plurality of reference viewpoints and a preset selection criterion, and a rendering process module performing an image-based rendering process by using a color image and a depth image corresponding to the final reference viewpoint.
    Type: Application
    Filed: September 14, 2021
    Publication date: December 29, 2022
    Inventors: Tae Hong JEONG, Kyu Sung CHO, Tae Yun SON, Jae Wan PARK
  • Patent number: 11530355
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: December 20, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11512226
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 29, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Patent number: 11499073
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: November 15, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Patent number: 11479720
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: October 25, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11466208
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: October 11, 2022
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Patent number: 11466207
    Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: October 11, 2022
    Inventors: Jin Uk Lee, Jae Wan Park, Jung Hun Lim
  • Publication number: 20220309703
    Abstract: An apparatus for estimating a camera pose according to an embodiment of the present disclosure includes a similar image searcher, a clusterer, and an estimator. The similar image searcher searches for a plurality of images similar to an input image, from among a plurality of previously-stored images, based on the input image. The clusterer creates a cluster including at least some similar images meeting predetermined conditions, from among the plurality of similar images, based on viewpoint data tagged to each of the plurality of similar images. The estimator estimates a pose of a camera that has generated the input image, based on the cluster.
    Type: Application
    Filed: September 22, 2020
    Publication date: September 29, 2022
    Inventors: Sang Rok KIM, Kyu Sung CHO, Jae Wan PARK, Tae Yun SON, Hyung Min LEE
  • Patent number: 11423609
    Abstract: A point cloud information generation apparatus according to an embodiment includes a 360-degree image acquirer configured to acquire a 360-degree image of a three-dimensional (3D) space, a point cloud information generator configured to generate first point cloud information for the 3D space from the 360-degree image, and a viewpoint orientation image generator configured to generate a plurality of viewpoint orientation images from the 360-degree image based on a reference viewpoint in the 360-degree image, wherein the point cloud information generator further configured to generate second point cloud information for the 3D space from the plurality of viewpoint orientation images.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: August 23, 2022
    Assignee: MAXST CO., LTD.
    Inventors: Hyung Min Lee, Kyu Sung Cho, Jae Wan Park
  • Patent number: 11421156
    Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: August 23, 2022
    Inventors: Jung Hun Lim, Jin Uk Lee, Jae Wan Park
  • Patent number: 11414569
    Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: August 16, 2022
    Inventors: Jae-Wan Park, Jung-Hun Lim, Jin-Uk Lee
  • Publication number: 20220230381
    Abstract: A method of controlling a display device includes rendering a plurality of viewpoint images, generating a plurality of sub-images based on the plurality of viewpoint images and a plurality of mapping pattern images corresponding to the plurality of viewpoint images, generating a single light-field image based on the plurality of sub-images, and outputting the single light-field image.
    Type: Application
    Filed: October 4, 2021
    Publication date: July 21, 2022
    Inventors: Rang Kyun MOK, Ji Young CHOI, Gi Seok KWON, Jae Joong KWON, Beom Shik KIM, Jae Wan PARK