Abstract: Disclosed are a holographic writing method and apparatus capable of re-writing (updating) holographic information and quickly writing the holographic information with high efficiency. In an embodiment, a holographic writing method for writing holographic information by emitting a beam at a holographic recording medium containing a photo-responsable polymer material having photoisomerization characteristics that change a molecular structure thereof by absorbing light energy, writes the holographic information by using a writing wavelength different from a maximum absorption wavelength in a light absorption spectrum of photoisomer molecule structures of the holographic recording medium. The maximum absorption wavelength is a wavelength at which light absorption rate is maximum in the light absorption spectrum.

Abstract: Disclosed are a holographic writing method and apparatus capable of re-writing (updating) holographic information and quickly writing the holographic information with high efficiency. In an embodiment, a holographic writing method for writing holographic information by emitting a beam at a holographic recording medium containing a photo-responsable polymer material having photoisomerization characteristics that change a molecular structure thereof by absorbing light energy, writes the holographic information by using a writing wavelength different from a maximum absorption wavelength in a light absorption spectrum of photoisomer molecule structures of the holographic recording medium. The maximum absorption wavelength is a wavelength at which light absorption rate is maximum in the light absorption spectrum.

Abstract: The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.

Abstract: The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.