Abstract: A display device may include pixels coupled to scan lines and data lines, at least one scan driver for supplying a scan signal to the pixels through the scan lines, and a data driver for supplying a data signal and a bias signal to the pixels through the data lines. The pixels are supplied with the data signal when the scan signal is supplied during display periods, and are supplied with the bias signal when the scan signal is supplied during a bias period between the display periods. By the bias signal, a bias voltage is supplied to first group pixels that emit light with a preset grayscale during the display periods.

Abstract: A display device according to an exemplary embodiment includes a display panel that includes a plurality of pixels, and an image shifter that corrects an image corresponding to input image data to be shifted based on age data with respect to the plurality of pixels and an input grayscale of input image data and outputs corrected image data, wherein a shift range of the image is reduced when an age value of the age data exceeds a threshold value.

Abstract: A crack detector may include a plurality of crack detection switches for connecting and disconnecting data lines of a display panel to one another. A signal supply may supply a detection control signal for controlling opening/closing of the crack detection switches and supply a crack detection signal to a first data line. A crack determiner may be configured to determine a crack of the display panel by comparing an output signal supplied from a second data line connected to the first data line through one of the crack detection switches, with a preset reference value.

Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Abstract: Methods for producing single crystal silicon ingots with a reduced oxygen content toward the seed end of the ingot are disclosed. The methods may involve controlling growth conditions during crown formation and, in some embodiments, controlling the rate of crucible rotation during crown rotation to increase the time the crucible is rotated at or below a threshold value during crown growth.

Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Abstract: An organic light emitting display capable of improving data charging time, includes pixels at crossing regions between scan and data lines and configured to control an amount of current supplied from a first to a second power source, a charge unit adjacent to an adjacent pixel of the pixels and coupled to the same data line as the adjacent pixel, a scan driver for supplying scan signals to the scan lines, a data driver for supplying data signals to the data lines in synchronization with the scan signals, and a comparison unit in a channel of the data driver to compare a data signal supplied to a current line with a data signal supplied to a previous line and to control coupling between the charge unit and the data line according to a comparison result in a partial period of a period in which the scan signals are supplied.

Abstract: An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Abstract: A method of driving an organic light emitting display device including a plurality of pixels during a frame including subframes includes: representing gray levels by utilizing some of the subframes of the frame prior to degradation of an organic light emitting diode of each of the plurality of pixels; and compensating for the degradation of the organic light emitting diodes by changing the utilized subframes to increase a portion of the frame utilized by the plurality of pixels to represent the gray levels.

Abstract: A display device includes: a display unit including a plurality of pixels connected to a plurality of scan lines and a plurality of data lines and emitting light according to corresponding image data; a dummy pixel connected to a dummy scan line and a dummy data line; and a compensation image data generator calculating a compensation amount according to an accumulation light emitting time of the first organic light emitting element to detect the compensation amount corresponding to each accumulation light emitting time of a plurality of second organic light emitting elements of the plurality of pixels by using a decreasing amount of luminance corresponding a resistance of a first organic light emitting element according to an accumulation light emitting time of the first organic light emitting element of the dummy pixel, and compensating the corresponding image data according to the detected compensation amount.

Abstract: An organic light emitting display device includes a pixel unit including a plurality of pixels, the plurality of pixels being disposed at intersections of data lines with scan lines, a data driver configured to supply data signals to the data lines, a scan driver configured to sequentially supply scan signals to the scan lines, a power supply unit configured to supply a first power to the pixel unit through first power supply lines and a second power to the pixel unit through second power supply lines, and a current controller configured to maintain current values of the first power supply lines to be lower than a reference value by controlling resistance values of the first power supply lines according to current values of the first power supply lines.

Abstract: A process is provided for evaluating oxygen precipitates in a single crystal silicon sample. The process comprises (a) annealing the single crystal silicon sample at a temperature sufficient to selectively grow as-grown oxygen precipitates having a size of about 25 nm or more and selectively dissolve as-grown oxygen precipitates having a size of about 25 nm or less; (b) cooling the single crystal silicon sample at a cooling rate sufficient to inhibit the nucleation of oxygen precipitates having a size of about 25 nm or less; (c) coating a surface of the single crystal silicon sample with a composition containing a metal capable of decorating oxygen precipitates; and (d) annealing the coated single crystal silicon sample at a temperature, for a duration, and in an atmosphere sufficient to decorate the oxygen precipitates in the single crystal silicon sample.

Abstract: An organic light emitting display capable of improving data charging time, includes pixels at crossing regions between scan and data lines and configured to control an amount of current supplied from a first to a second power source, a charge unit adjacent to an adjacent pixel of the pixels and coupled to the same data line as the adjacent pixel, a scan driver for supplying scan signals to the scan lines, a data driver for supplying data signals to the data lines in synchronization with the scan signals, and a comparison unit in a channel of the data driver to compare a data signal supplied to a current line with a data signal supplied to a previous line and to control coupling between the charge unit and the data line according to a comparison result in a partial period of a period in which the scan signals are supplied.