Abstract: The present disclosure relates to a Cu/Zn/Al catalyst and a method for preparing same. More particularly, the present disclosure relates to a Cu/Zn/Al catalyst including copper particles having high surface area and thus having excellent activity, which is prepared by: preparing a metal precursor solution by dissolving a copper precursor, a zinc precursor and an aluminum precursor in an organic solvent; mixing an aqueous basic solution with the metal precursor solution and precipitating metal particles; and preparing a Cu/Zn/Al catalyst by collecting and sintering the precipitated metal particles, and a method for preparing same.

Abstract: A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.

Abstract: Provided is a method for preparing hydrophobic monolithic silica aerogel, comprising dipping monolithic wet silica gel obtained by using an alkoxide precursor into an alkylsilane solution as a dipping solution to perform hydrophobitization of the surface and inner part of the monolithic wet silica gel by a dipping process. The method is economical by virtue of the use of a small amount of alkylsilane compound and imparts hydrophobic property to monolithic silica aerogel simply in a cost efficient and time efficient manner. In addition, the method reduces shrinkage of hydrophobic monolithic silica aerogel, enables production of hydrophobic monolithic silica aerogel in a translucent form, and allows the hydrophobic monolithic silica aerogel to maintain low heat conductivity similar to the heat conductivity of hydrophilic silica aerogel. The hydrophobic monolithic silica aerogel may be used directly as a heat insulating panel by virtue of excellent hydrophobic property and heat insulating property.

Abstract: In one embodiment, a transfer robot for transferring a substrate includes a supporting means, a transfer robot arm including a first sub-robot arm and a second sub-robot arm arranged over the supporting means, an inner rail and an outer rail adjacent to the inner rail overlying the supporting means. The first sub-robot arm is adapted to move in a straight line motion along the inner rail and the second sub-robot arm is adapted to move in a straight line motion along the outer rail. The second sub-robot arm surrounds the first sub-robot arm.

Abstract: A method of forming patterns of a semiconductor device includes forming partition patterns on a hard mask layer; forming a first auxiliary layer on the entire structure including a surface of the partition patterns; forming auxiliary patterns to cover a portion of the first auxiliary layer formed over sidewalls of the partition pattern formed in second region, where each of the auxiliary patterns in the second region has a width greater than a thickness of the first auxiliary layer; forming spacers on sidewalls of the partition patterns, so that a portion of the partition patterns and a portion of the hard mask layer are exposed; removing the auxiliary patterns; etching the partition patterns exposed between the spacers; and removing remaining regions of the partition patterns and the hard mask layer exposed between the spacers.

Abstract: A substrate processing system and substrate transferring method is disclosed, which is capable of transferring a substrate bi-directionally through the use of substrate transferring device provided between two rows of processing chambers arranged linearly, thereby improving the substrate-transferring efficiency, the substrate processing system comprising a transfer chamber having at least one bi-directional substrate transferring device for bi-directionally transferring a substrate; and a plurality of processing chambers for applying a semiconductor-manufacturing process to the substrate, wherein the plurality of processing chambers are linearly arranged along two rows confronting each other, and the transfer chamber is interposed between the two rows of the processing chambers, wherein the at least one bi-directional substrate transferring device comprises a moving unit provided inside the transfer chamber, and horizontally moved by a linear motor; and a bi-directional substrate transferring unit provided in

Abstract: In one embodiment, a transfer robot for transferring a substrate includes a supporting means, a transfer robot arm including a first sub-robot arm and a second sub-robot arm arranged over the supporting means, an inner rail and an outer rail adjacent to the inner rail overlying the supporting means. The first sub-robot arm is adapted to move in a straight line motion along the inner rail and the second sub-robot arm is adapted to move in a straight line motion along the outer rail. The second sub-robot arm surrounds the first sub-robot arm.

Abstract: An apparatus for manufacturing a substrate includes: a transferring chamber extended along a long direction; at least one process chamber connected to the transferring chamber along the long direction; at least one load-lock chamber connected to the transferring chamber at least one side of the transferring chamber; and a transferring chamber robot moving along the long direction in the transferring chamber and transferring a substrate.

Abstract: A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.

Abstract: A substrate-treating apparatus includes: at least one process chamber treating a substrate; a movable transfer chamber movable adjacent to the process chamber; a driving means moving the movable transfer chamber; and a connection means combining and separating the process chamber and the movable transfer chamber.

Abstract: An apparatus for manufacturing a substrate includes: a transferring chamber extended along a long direction; at least one process chamber connected to the transferring chamber along the long direction; at least one load-lock chamber connected to the transferring chamber at least one side of the transferring chamber; and a transferring chamber robot moving along the long direction in the transferring chamber and transferring a substrate.

Abstract: A method of catalysts reduction using non-thermal plasma according to the present invention is characterized to reduce catalysts containing metal compounds by bringing them into contact with hydrogen-containing gas under a non-thermal plasma state. In the method of catalysts reduction using non-thermal plasma according to the present invention, said non-thermal plasma is generated by dielectric barrier discharge. In the method of catalysts reduction using non-thermal plasma according to the present invention, the plasma energy that is required to vary depending on the types of metals is regulated by the magnitude of power via voltage regulation. In the method of catalysts reduction using non-thermal plasma according to the present invention, said reduction method is conducted in conjunction with existing methods of gaseous hydrogen reduction by heating, electrochemical reduction methods, or methods of reduction by adding organic or inorganic reducing agents.