Abstract: The present discloses provides a memory device and a method of operating the memory device. The memory device includes first main plugs formed in a vertical direction over a substrate and arranged in a first direction, second main plugs, third main plugs arranged between the first and second main plugs, the third main plugs adjacent to the first and second main plugs, and bit lines above the first to third main plugs, wherein each of the first to third main plugs includes first and second sub-plugs facing each other, wherein portions of the first and second sub-plugs included in each of the first and third main plugs are coupled to different select lines, and wherein portions of the first and second sub-plugs included in each of the second and third main plugs are coupled to different select lines.

Abstract: An indoor heating line is arranged to pass through a heater core for a coolant heater and indoor air conditioning, and is provided with a first pump so that coolant can flow. A battery heating line is branched from a downstream point of the heater core and connected to an upstream point of the coolant heater after passing through a battery heat exchange part for temperature-raising a high voltage battery, where the battery heating line includes a first heat exchange flow passage that connects a downstream point of the heater core to a first side of the battery heat exchange part, and a second heat exchange flow passage that connects a second side thereof and an upstream point of the coolant heater, where the first heat exchange flow passage and the second heat exchange flow passage are configured to mutually exchange heat.

Abstract: The present invention relates to a secondary battery in which an electrode tab is improved in mechanical strength and a method for manufacturing the same. Also, the secondary battery according to the present invention includes: an electrode provided with a coating portion coated with an active material on an electrode collector and a non-coating portion on which the active material is not applied to the electrode collector in a longitudinal direction of the electrode collector and a notching tab part extending from the coating portion in a width direction of the electrode collector without coating with the active material and overlapping each other to form two or more layers when the electrode is wound.

Abstract: A memory device having an improved program performance includes a memory cell array, a peripheral circuit, and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit is configured to program each of the plurality of memory cells to a target program state among a plurality of program states. The control logic is configured to control the peripheral circuit to apply a program voltage to a word line that is coupled to the plurality of memory cells and perform a bit line discharge operation of applying program enable voltages to a plurality of bit lines that is coupled to the plurality of memory cells while the program voltage is applied to the word line. Timings for applying the program enable voltages to the plurality of bit lines are determined based on the corresponding target program states.

Abstract: An electrode assembly, a battery, and a battery pack and a vehicle including the same are provided. In the electrode assembly, a first electrode, a second electrode, and a separator interposed therebetween are wound based on an axis to define a core and an outer circumference. The first electrode includes a first portion coated with an active material and a second portion at a first side and adjacent the first portion, the second portion being exposed beyond the separator along a first axial direction of the electrode assembly. A part of the second portion is bent in a radial direction of the electrode assembly forming a first surface region including stacked layers of the second portion, and in a partial region of the first surface region, a number of the stacked layers of the second portion is 10 or more in the in the first axial direction.

Abstract: The riveting structure of an electrode terminal for a battery includes a battery housing having a bottom; an electrode terminal riveted through a hole formed in the bottom of the battery housing; and a gasket between the electrode terminal and the battery housing. Also, the electrode terminal includes a body portion inserted into the hole; an outer flange portion extending along an outer surface of the bottom of the battery housing from a first side of the body portion exposed through the outer surface; an inner flange portion extending toward an inner surface of the bottom of the battery housing from a second side of the body portion exposed through the inner surface; and a flat portion on the second side of the body portion.

Abstract: An indoor heating line is arranged to pass through a heater core for a coolant heater and indoor air conditioning, and is provided with a first pump so that coolant can flow. A battery heating line is branched from a downstream point of the heater core and connected to an upstream point of the coolant heater after passing through a battery heat exchange part for temperature-raising a high voltage battery, where the battery heating line includes a first heat exchange flow passage that connects a downstream point of the heater core to a first side of the battery heat exchange part, and a second heat exchange flow passage that connects a second side thereof and an upstream point of the coolant heater, where the first heat exchange flow passage and the second heat exchange flow passage are configured to mutually exchange heat.

Abstract: An indoor heating line is arranged to pass through a heater core for a coolant heater and indoor air conditioning, and is provided with a first pump so that coolant can flow. A battery heating line is branched from a downstream point of the heater core and connected to an upstream point of the coolant heater after passing through a battery heat exchange part for temperature-raising a high voltage battery, where the battery heating line includes a first heat exchange flow passage that connects a downstream point of the heater core to a first side of the battery heat exchange part, and a second heat exchange flow passage that connects a second side thereof and an upstream point of the coolant heater, where the first heat exchange flow passage and the second heat exchange flow passage are configured to mutually exchange heat.

Abstract: An electrode assembly includes a first electrode; a second electrode; and a separator, the first electrode, the second electrode, and the separator wound about an axis defining a core and an outer circumference of the electrode assembly. The first electrode has a pair of first sides and a pair of second sides, a first portion extending between the pair of first sides, and a second portion extending between the pair of first sides, the first portion being coated with an active material, and at least a part of the second portion includes an electrode tab. The second portion includes a first part adjacent to the core of the electrode assembly, a second part adjacent to the outer circumference of the electrode assembly, and a third part between the first part and the second part. The first or second part has a smaller height than the third part.

Abstract: A system for controlling an air heat exchanger of a vehicle includes an information collector which collects environmental information including a current speed of a vehicle, a desired air mass flow rate, and an ambient temperature. A storage stores the environmental information therein. A controller calculates a driving load and a cooling load in accordance with the environmental information and calculating a control amount of an air heat exchanger, at which a cost function that is a sum of the driving load and the cooling load is minimum.

Abstract: A system for controlling an air heat exchanger of a vehicle includes an information collector which collects environmental information including a current speed of a vehicle, a desired air mass flow rate, and an ambient temperature. A storage stores the environmental information therein. A controller calculates a driving load and a cooling load in accordance with the environmental information and calculating a control amount of an air heat exchanger, at which a cost function that is a sum of the driving load and the cooling load is minimum.

Abstract: A vehicular thermal management system includes: an indoor-air-conditioner disposed in a first vehicle body having a passenger space and including a compressor, a first condenser, an evaporator, a blower, and a refrigerant line; and a component-air-conditioner disposed in a second vehicle body combinable with the first vehicle body and including an electrical component line for cooling an electrical component of the vehicle and a first battery line for cooling a high-voltage battery including a chiller which extends toward the first vehicle body to be disposed behind the evaporator when the first vehicle body is combined with the second vehicle body.

Abstract: The present technology relates to an electronic device. A memory device configured to perform a sensing operation based on a charge degree of a sensing node includes a memory cell array including a plurality of memory cells, a peripheral circuit including a page buffer connected to a selected memory cell among the plurality of memory cells through a bit line, and configured to perform a sensing operation on the selected memory cell, and control logic configured to control the peripheral circuit to precharge a source line among lines connected to the memory cell array and perform the sensing operation based on a degree at which a sensing node in the page buffer is charged, during the sensing operation.

Abstract: A memory device includes a common source line, a memory cell array, bit lines, and a conductive layer. The common source line is formed on a substrate. The memory cell array is formed on the common source line. The bit lines are connected to the memory cell array. The conductive layer is formed over the bit lines. In an erase operation, the memory device increases a voltage of the bit lines to an erase voltage through capacitive coupling by increasing a voltage applied to the conductive layer.

Abstract: A semiconductor memory device includes a memory block and a peripheral circuit. The memory block includes normal pages and buffer pages. Each of the normal pages includes memory cells that store the N bits of data. Each of the buffer pages includes memory cells that store one bit of data. The peripheral circuit receives a first page data and performs a single level cell (SLC) program on the first page data in a first buffer page. In addition, the peripheral circuit receives a second page data and performs the SLC program on the second page data in a second buffer page. In addition, the peripheral circuit performs a multiple-level program operation on a normal page based on the first and second page data programmed in the first and second buffer page, respectively.

Abstract: A vehicular thermal management system includes: an indoor-air-conditioner disposed in a first vehicle body having a passenger space and including a compressor, a first condenser, an evaporator, a blower, and a refrigerant line; and a component-air-conditioner disposed in a second vehicle body combinable with the first vehicle body and including an electrical component line for cooling an electrical component of the vehicle and a first battery line for cooling a high-voltage battery including a chiller which extends toward the first vehicle body to be disposed behind the evaporator when the first vehicle body is combined with the second vehicle body.

Abstract: A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines. The memory device also includes a peripheral circuit configured to perform a plurality of program loops to program memory cells, among the plurality of memory cells, connected to a selected word line among the plurality of word lines. The memory device further includes control logic configured to control the peripheral circuit to set a step voltage based on the number of turned off memory cells among the selected memory cells and then apply a program voltage, to which the step voltage is added, to the selected word line in a next program loop, during a verify operation of a program operation and the verify operation included in each of the plurality of program loops.

Abstract: An integrated thermal management circuit for a vehicle includes a refrigerant line that causes a refrigerant to flow through a compressor, an interior condenser of an interior air conditioning device, and an exterior condenser outside the vehicle. The circuit causes the refrigerant discharged from the condenser to pass through an integrated chiller or an evaporator of the air conditioning device and to be introduced into the compressor. The circuit includes: a first cooling line causing a cooling water to circulate between a high voltage battery and a first radiator or between the high voltage battery and the integrated chiller; a second cooling line causing the cooling water to circulate between an electronic drive unit and a second radiator or between the electronic drive unit and the integrated chiller; and a bypass line provided in the first cooling line.

Abstract: A memory device including a plurality of memory cells, configured to perform a read operation of reading data from memory cells connected to a selected word line, and configured to apply a plurality of read voltages to the selected word line, apply a first pass voltage to unselected word lines while first read voltages for determining a program state of memory cells having a threshold voltage higher than a reference voltage among the plurality of read voltages are applied to the selected word line, and apply a second pass voltage higher than the first pass voltage to the unselected word line while second read voltages for determining a program state of memory cells having a threshold voltage lower than the reference voltage among the plurality of read voltages are applied to the selected word line.

Abstract: A memory device configured to perform a program operation and a backup operation together includes a memory block including a main sub block including selected memory cells in which program data is programmed among a plurality of memory cells respectively connected to a plurality of word lines, and a backup block in which page data included in the program data is backed up, a peripheral circuit configured to perform a plurality of program loops to program the program data in the selected memory cells, and control logic configured to control the peripheral circuit to back up any one of the page data while programming the selected memory cells in preset program loops among the plurality of program loops.