Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 ?m or more.

Abstract: A storage device includes a memory device including a plurality of zones, each of the plurality of zones having a plurality of memory blocks, a buffer memory device including a host buffer receiving write data to be stored in one of the plurality of zones, and a memory buffer temporarily storing the write data transmitted from the host buffer, a buffer controller configured to control the buffer memory device to transmit the write data to the memory device, and a write operation controller configured to control the memory device to store the write data in the one of the plurality of one zones. The write operation controller controls the memory device to obtain the previously stored data and a corrected write data and to store the previously stored data and the corrected write data in a second memory block group after the write operation controller detects an error in the write data.

Abstract: The present technology relates to an electronic device. A storage device may include a memory device and a memory controller. The memory device may include a buffer block and a plurality of zones each having a plurality of data blocks. The memory controller may control the memory device to: flush target data of write data to the buffer block, a write operation of the write data on a first zone is interrupted due to a sudden power off, and copy data previously stored in the first zone, among the write data, to a second zone and the target data flushed into the buffer block to the second zone after the sudden power off is recovered. The data previously stored in the first zone and the target data correspond to consecutive logical addresses.

Abstract: A storage device includes a memory device including a plurality of zones, each of the plurality of zones having a plurality of memory blocks, a buffer memory device including a host buffer receiving write data to be stored in one of the plurality of zones, and a memory buffer temporarily storing the write data transmitted from the host buffer, a buffer controller configured to control the buffer memory device to transmit the write data to the memory device, and a write operation controller configured to control the memory device to store the write data in the one of the plurality of one zones. The write operation controller controls the memory device to obtain the previously stored data and a corrected write data and to store the previously stored data and the corrected write data in a second memory block group after the write operation controller detects an error in the write data.

Abstract: A memory controller controlling an operation of a memory device includes a parity module configured to perform one or more exclusive OR operations using data to be stored in the memory device and generate parity according to the one or more exclusive OR operations, and a recovery controller configured to control the parity module to store the parity in the memory device based on the number of times the exclusive OR operation is performed.

Abstract: The present technology includes a memory controller and a method of operating the same. The memory controller controlling an operation of a memory device includes a parity module configured to perform one or more exclusive OR operations using data to be stored in the memory device and generate parity according to the one or more exclusive OR operations, and a recovery controller configured to control the parity module to store the parity in the memory device based on the number of times the exclusive OR operation is performed.