Abstract: Disclosed are a SiC MOSFET power semiconductor device and a method of manufacturing the same. More particularly, a SiC MOSFET power semiconductor device and a method of manufacturing the same are disclosed, including a trench gate having a hexagonal shape in a plan or layout view, to improve on-resistance (Rsp) characteristics and increase channel density.

Abstract: Disclosed are a semiconductor device (1) including a MOSPET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device (1) including a silicon carbide (SiC) MOSPET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.

Abstract: Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a first insulating layer pattern on a semiconductor substrate, a second insulating layer including fluorine on the first insulating layer pattern, a third insulating layer pattern on the second insulating layer pattern, and a polysilicon pattern on the third insulating layer pattern. The fluorine is included in the second insulating layer that may be a nitride layer that stores data in a flash memory device, so that data retention and reliability are improved without exerting an influence upon capacitor characteristics.

Abstract: Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an active region of a semiconductor substrate. Next, a gate region is formed by sequentially forming a floating gate, a gate insulating layer, and a control gate over the tunnel oxide layer. Then, a sidewall oxide layer is formed on a gate region. Next, a fluorine plasma ion implantation process is performed on the sidewall oxide layer. Then, a nitride layer is deposited on the sidewall oxide layer. Next, an etch process is performed to form spacer insulating layers.

Abstract: Flash memory devices and methods for fabricating the same. In one example embodiment, a method of fabricating a flash memory includes various acts. First, a tunnel oxide layer is formed on an active region of a semiconductor substrate. Next, a gate region is formed by sequentially forming a floating gate, a gate insulating layer, and a control gate over the tunnel oxide layer. Then, a sidewall oxide layer is formed on a gate region. Next, a fluorine plasma ion implantation process is performed on the sidewall oxide layer. Then, a nitride layer is deposited on the sidewall oxide layer. Next, an etch process is performed to form spacer insulating layers.