Patents by Inventor Jae Ho Hong
Jae Ho Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240175572Abstract: Proposed is a connection tube support of a waste heat recovery boiler supporting a connection tube unit having a plurality of connection tubes that is disposed inside a waste heat recovery boiler and perform heat exchange between a fluid flowing inside and exhaust gas flowing outside, wherein the connection tube support includes a header storing fluid flowing through the connection tube unit and supporting one end of the connection tube unit by being connected to one end of the connection tube unit, and a tube sheet supporting a circumferential surface of each of the plurality of connection tubes, wherein the tube sheet has the plurality of connection tubes having been passed therethrough and is provided with a plurality of support holes respectively supporting circumferential surfaces of the plurality of connection tubes having been passed therethrough.Type: ApplicationFiled: August 4, 2023Publication date: May 30, 2024Inventors: Uk KIM, Jae Cheol KIM, Min Su KIM, Jung Ah SON, Young Wook LEE, Jong Ho HONG, Kyu Man KIM
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Publication number: 20240173543Abstract: Proposed is a vagus nerve stimulator having at least two electrodes that are configured to be worn on at least one of the left and right ears and are configured to generate electrical stimulation on the vagus nerve in the auricle. The vagus nerve stimulator may include: a body part configured to be located on a side of a wearer's ear; a first electrode configured to be inserted into and make contact with the external acoustic meatus of the wearer's ear; a second electrode configured to make contact with the cymba concha of the wearer's ear; a first electrode fixing part protruding from the body part and having a first electrode at an end thereof; and a second electrode fixing part protruding from the body part and having a second electrode at an end thereof.Type: ApplicationFiled: December 1, 2021Publication date: May 30, 2024Applicant: NEURIVE Co., Ltd.Inventors: Jae Jun SONG, Hyuk CHOI, Guk Han KIM, Yong Ho JUNG, Ki Hwan HONG
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Patent number: 11996844Abstract: A duty cycle correction circuit includes a duty correction circuit, an information generation circuit and a duty control circuit. The duty correction circuit corrects a duty rate of an input clock signal based on a duty control code to generate an output clock signal. The information generation circuit compares a difference between operation power voltages based on an operation mode to generate voltage information. The duty control circuit receives the voltage information from the information generation circuit and generates the duty control code that includes the voltage information based on a duty rate of the output clock signal.Type: GrantFiled: February 7, 2023Date of Patent: May 28, 2024Assignee: SK hynix Inc.Inventors: Dae Ho Yang, Min Su Kim, Kwan Su Shon, Keun Seon Ahn, Soon Sung An, Su Han Lee, Jae Hoon Jung, Kyeong Min Chae, Jae Hyeong Hong, Jun Sun Hwang
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Patent number: 11987740Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.Type: GrantFiled: August 30, 2021Date of Patent: May 21, 2024Assignee: ENF Technology Co., Ltd.Inventors: Dong Hyun Kim, Hyeon Woo Park, Sung Jun Hong, Myung Ho Lee, Myung Geun Song, Hoon Sik Kim, Jae Jung Ko, Myong Euy Lee, Jun Hyeok Hwang
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Publication number: 20240159470Abstract: Disclosed herein is a once-through heat exchanger that includes a tube stack including a plurality of tubes, a plurality of heads connected to the tubes and configured to accommodate heated steam, and a manifold connected to the heads via a first link pipe and a second link pipe and configured to accommodate heated steam. The heads are spaced in a direction crossing a longitudinal direction thereof, and the first link pipe and the second link pipe include a first inclined link part or a second inclined link part, respectively, extending at an angle to each other.Type: ApplicationFiled: August 29, 2023Publication date: May 16, 2024Inventors: Jae Cheol KIM, Hoon JEGAL, Jong Ho HONG
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Publication number: 20240159172Abstract: Disclosed herein is a once-through heat exchanger that includes a tube stack including a plurality of tubes, a plurality of heads connected to the tube stack via a connection module and configured to accommodate heated steam, the connector module comprising a plurality of tube connectors and configured to connect the tubes and the heads, and a manifold connected to the heads via a plurality of link pipes and configured to accommodate heated steam, wherein the connector module comprises a first tube connector and a second tube connector having different shapes.Type: ApplicationFiled: August 17, 2023Publication date: May 16, 2024Inventors: Kyu Man KIM, Uk KIM, Jae Cheol KIM, Min Su KIM, Jung Ah SON, Young Wook LEE, Jong Ho HONG
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Publication number: 20240151361Abstract: A hydrogen supply method includes a two-side heat exchange mode in which both introducing a second fluid into a hydrogen storage part after the second fluid exchanges heat with a first fluid in a second heat exchanger in a state in which a compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in a thermal device are performed. The method also includes a one-side heat exchange mode in which one of introducing the second fluid into the hydrogen storage part after the second fluid exchanges heat with the first fluid in the second heat exchanger in a state in which the compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in the thermal device is performed.Type: ApplicationFiled: August 30, 2023Publication date: May 9, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Yeon Ho Kim, Hoon Mo Park, Kyung Moon Lee, Dong Hoon Nam, Ji Hye Park, Young Jin Cho, Jea Wan Kim, Byeong Soo Shin, Ji Hoon Lee, Ho Young Jeong, Suk Hoon Hong, Man Hee Park, Yeong Jun Kim, Jae Yeon Kim, Ho Chan An
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Patent number: 11963364Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.Type: GrantFiled: September 28, 2022Date of Patent: April 16, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Seok Han Park, Yong Seok Kim, Hui-Jung Kim, Satoru Yamada, Kyung Hwan Lee, Jae Ho Hong, Yoo Sang Hwang
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Patent number: 11939505Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.Type: GrantFiled: August 30, 2021Date of Patent: March 26, 2024Assignee: ENF Technology Co., Ltd.Inventors: Dong Hyun Kim, Hyeon Woo Park, Sung Jun Hong, Myung Ho Lee, Myung Geun Song, Hoon Sik Kim, Jae Jung Ko, Myong Euy Lee, Jun Hyeok Hwang
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Publication number: 20240084474Abstract: The present invention relates to a metal-polymer resin composite in which a polymer resin is directly injection-molded to a zinc alloy, a magnesium alloy, or a die-casting part thereof, and thus an injection product is directly bonded to a metal surface, wherein in the case of a hard polymer resin, a tensile strength of the metal and the polymer resin is 30 MPa or greater, and in the case of a soft polymer resin, a tensile strength of the metal and the polymer resin is 20 MPa or greater, and an average helium leakage after 10 times of measurement is 10?8 Pa·m3/s or less, and a novel method for preparing the same.Type: ApplicationFiled: December 10, 2021Publication date: March 14, 2024Applicant: PLASTAL CO., LTD.Inventors: Mu Chang SUNG, Jae Ik KIM, Jae Hwa KIM, Sung Ho HONG
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Patent number: 11903184Abstract: A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.Type: GrantFiled: August 3, 2021Date of Patent: February 13, 2024Inventors: Kyung Hwan Lee, Yong Seok Kim, Il Gweon Kim, Hui-Jung Kim, Min Hee Cho, Jae Ho Hong
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Patent number: 11723290Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.Type: GrantFiled: October 29, 2021Date of Patent: August 8, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Hwan Lee, Yong Seok Kim, Tae Hun Kim, Seok Han Park, Satoru Yamada, Jae Ho Hong
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Patent number: 11711918Abstract: Provided is a semiconductor memory device. The semiconductor memory device comprises a first semiconductor pattern including a first impurity region, a second impurity region, and a channel region, the first impurity region spaced apart from a substrate in a first direction and having a first conductivity type, the second impurity region having a second conductivity type different from the first conductivity type, and the channel region between the first impurity region and the second impurity region, a first conductive connection line connected to the first impurity region and extending in a second direction different from the first direction and a first gate structure extending in the first direction and including a first gate electrode and a first gate insulating film, wherein the first gate electrode penetrates the channel region and the first gate insulating film is between the first gate electrode and the semiconductor pattern.Type: GrantFiled: April 12, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Hwan Lee, Yong Seok Kim, Hyun Cheol Kim, Satoru Yamada, Sung Won Yoo, Jae Ho Hong
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Publication number: 20230019055Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.Type: ApplicationFiled: September 28, 2022Publication date: January 19, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Seok Han PARK, Yong Seok KIM, Hui-Jung KIM, Satoru YAMADA, Kyung Hwan LEE, Jae Ho HONG, Yoo Sang HWANG
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Patent number: 11469252Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.Type: GrantFiled: July 29, 2020Date of Patent: October 11, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Seok Han Park, Yong Seok Kim, Hui-Jung Kim, Satoru Yamada, Kyung Hwan Lee, Jae Ho Hong, Yoo Sang Hwang
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Publication number: 20220199625Abstract: A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.Type: ApplicationFiled: August 3, 2021Publication date: June 23, 2022Inventors: Kyung Hwan Lee, Yong Seok Kim, Il Gweon Kim, Hui-Jung Kim, Min Hee Cho, Jae Ho Hong
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Publication number: 20220139948Abstract: A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.Type: ApplicationFiled: July 16, 2021Publication date: May 5, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Hwan LEE, Yong Seok KIM, Il Gweon KIM, Hyun Cheol KIM, Hyeoung Won SEO, Sung Won YOO, Jae Ho HONG
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Publication number: 20220052257Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.Type: ApplicationFiled: October 29, 2021Publication date: February 17, 2022Inventors: Kyung Hwan LEE, Yong Seok KIM, Tae Hun KIM, Seok Han PARK, Satoru YAMADA, Jae Ho HONG
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Patent number: 11165018Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.Type: GrantFiled: October 3, 2019Date of Patent: November 2, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung Hwan Lee, Yong Seok Kim, Tae Hun Kim, Seok Han Park, Satoru Yamada, Jae Ho Hong
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Publication number: 20210335798Abstract: Provided is a semiconductor memory device. The semiconductor memory device comprises a first semiconductor pattern including a first impurity region, a second impurity region, and a channel region, the first impurity region spaced apart from a substrate in a first direction and having a first conductivity type, the second impurity region having a second conductivity type different from the first conductivity type, and the channel region between the first impurity region and the second impurity region, a first conductive connection line connected to the first impurity region and extending in a second direction different from the first direction and a first gate structure extending in the first direction and including a first gate electrode and a first gate insulating film, wherein the first gate electrode penetrates the channel region and the first gate insulating film is between the first gate electrode and the semiconductor pattern.Type: ApplicationFiled: April 12, 2021Publication date: October 28, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Hwan LEE, Yong Seok KIM, Hyun Cheol KIM, Satoru YAMADA, Sung Won YOO, Jae Ho HONG