Patents by Inventor Jagannathan Vasudevan

Jagannathan Vasudevan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices
    Patent number: 9825031
    Abstract: A method includes forming first and second contact openings in a first dielectric layer. At least the first contact opening is at least partially lined with a liner layer. A first conductive feature is formed in the first contact opening and a second conductive feature is formed in the second contact opening. A portion of the liner layer adjacent a top surface of the first dielectric layer is removed to define a recess. A barrier layer is formed above the first dielectric layer and in the recess. The barrier layer has a first dielectric constant greater than a second dielectric constant of the first dielectric layer. A second dielectric layer is formed above the barrier layer. A third conductive feature is formed embedded in the second dielectric layer and contacting the second conductive feature.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: November 21, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Guillaume Bouche, Andy C. Wei, Jason E. Stephens, David M. Permana, Jagannathan Vasudevan