Abstract: A three-dimensional, reconfigurable system package is provided for an electronic system. The system package includes a plurality of layers of active electronic components integrated both vertically and horizontally into a single circuit, with the layers being vertically stacked and spaced apart from one another. The layers include a base layer whose active electronic components include a reconfigurable system-on-chip configured to at least partially implement the electronic system, and an upper layer whose active electronic components include electronic components configured to signal process RF signals. The system package also includes a RF tunnel that extends vertically between the base layer and upper layer, and that is configured to provide structural support and vertical separation for the upper layer, and transport at least some RF signals between the base layer and upper layer. And a cover is secured to the base layer and encases the active electronic components and RF tunnel.

Abstract: Described are various compensation circuit designs to ensure proper shutoff of an unselected transducer in a transducer switching matrix. The switch of an unselected transducer is moved to a strong OFF state by injection of a compensation current. The compensation network is implemented as semiconductor integrated circuits which provide a high-voltage column switching diode, and a compensation switch. The compensation switch and column switching diode are configured such that they are isolated from each other.

Abstract: An acoustic inkjet printhead utilizes a pulse width modulation to control droplet size or ejection velocity. An individual control pulse controls the duration and the time a RF signal is applied to each transducer. To modify the RF signal of each transducer, the pulse width of each control signal can be modified according to a predetermined correction data. The rising edge of the control data is delayed according to the correction data while the falling edge is kept the same.

Abstract: An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.

Abstract: An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

Abstract: A semiconductor circuit integrated with CMOS circuits for receiving a TTL input voltage and generating a large negative and positive voltage swing with respect to p-type or n-type substrate is disclosed. This invention is based on elimination of the electro-static discharge (ESD) protection circuit which is a requirement for any integrated circuit. Eliminating the ESD protection circuit also eliminates the clamping feature of the ESD protection circuit and therefore the circuit can be driven to negative voltages for PMOS circuits and to positive voltages for NMOS circuits. This provides the possibility of connecting the drain of a a P-channel type metal oxide silicon field effect (PMOS) transistor, which is fabricated on a p-type substrate within an n-well, to a voltage below the the substrate voltage. Also, in a n-channel type metal oxide silicon field effect (NMOS) transistor which is fabricated on a n-type substrate within a P-well, the drain can be connected to voltages higher than the substrate voltage.