Abstract: A radioisotope generator system may comprise a common platform convertor having two ends, and multiple heat source modules thermally coupled to each other and to the common platform convertor. A portion of the multiple heat source modules may be thermally coupled to each end of the common platform convertor. The common platform convertor may be optimized for a nominal power level.

Abstract: A Stirling radioisotope generator is provided. The generator includes a first and second heat source assembly, each heat source assembly comprising two General Purpose Heat Source modules, each General Purpose Heat Source module configured to generate thermal energy. The generator also includes a first and second Stirling convertor in thermal communication with the first and second heat source assembly, respectively, each Stirling convertor configured to convert the thermal energy into electrical power. The generator has a housing enclosing the first and second heat source assembly and the first and second Stirling convertor, the housing configured to dissipate excess thermal energy.

Abstract: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.

Abstract: The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.

Abstract: A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.

Abstract: An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3) at the operating temperatures of the ion source. Consequently, oxidation of the filament and other metal components of the arc chamber is limited, or even prevented. Thus, the invention can advantageously lead to longer filament lives as compared to certain conventional processes that generate oxygen plasmas using hot filament sources.

Abstract: Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.

Abstract: The invention provides methods and apparatus for generating helium ions. The methods involve providing a mixture of helium gas with a second gas in an ion source. The second gas has a lower ionization potential and larger molecules than that of helium. The helium gas is ionized by generating an arc discharge within the ion source. The presence of the second gas enhances the ionization of the helium gas. The increased helium ionization enables formation of helium ion beams having a high beam currents suitable for implantation.

Abstract: Ion source filaments, as well as methods and apparatus associated with the same are provided. The source filaments have a design that includes a relatively small surface area from which electrons are emitted (i.e., active portion) as compared to certain conventional source filaments. Suitable designs include filaments that have a V-shape or U-shape active portion, rather than a coiled active portion as in certain conventional source filaments. The source filaments of the present invention can increase the efficiency of ion generation and, in particular, the generation of multiply charged ionic species. The increased ion generation efficiency may enable formation of ion beams having relatively high beam currents suitable for implantation.

Abstract: Methods and apparatus are provided for generating oxygen ions in an ion source having an arc chamber containing at least one oxidizable metal. The method includes the steps of feeding gaseous H2O into the arc chamber and operating the arc chamber in a temperature range where the free energy of formation of gaseous H2O is less than the free energy of formation of oxides of the oxidizable metal.

Abstract: An oxygen ion containing plasma is generated using a hot filament ion source. The oxygen ions in the plasma come from an oxide source (e.g., a metal oxide) which has a lower free energy of formation than that of the filament metal oxide (e.g., WO3) at the operating temperatures of the ion source. Consequently, oxidation of the filament and other metal components of the arc chamber is limited, or even prevented. Thus, the invention can advantageously lead to longer filament lives as compared to certain conventional processes that generate oxygen plasmas using hot filament sources.

Abstract: A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.

Abstract: New and improved compacted or powder pressed materials for thermoelectric applications include a body formed from compacted powder material including at least bismuth and tellurium and at least one highly electrically conductive phase. The materials are made in accordance with the general method of the present invention by forming a particulate mixture containing the constituent elements of a first compound including at least bismuth and tellurium and the constituent elements of a second compound capable of forming at least one highly electrically conductive phase, and thereafter, compressing at least a portion of said particulate mixture to form a compacted body of the material. In accordance with a first preferred embodiment, the first and second compounds are first separately prepared from their respective constituent elements. The first and second compounds are then combined and heated to form a melt. Thereafter, the melt is cooled to solid material form and then crushed to form the particulate mixture.

Abstract: There is disclosed a new and improved material and device for improved selective absorption of light energy for use in photothermal applications and a method and apparatus for manufacturing same.The device includes a layer of thermal infrared radiation reflecting material containing a transition metal or stainless steel. A solar radiation absorbing layer is deposited over the infrared reflecting layer. This layer comprises either amorphous boron or an amorphous alloy of boron and silicon, boron and germanium or boron and molybdenum.Finally, a solar radiation antireflecting material layer is deposited over the solar radiation absorbing layer. This layer comprises an amorphous alloy of nitrogen and either silicon or boron.

Abstract: An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.

Abstract: A new and improved thermoelectric device of the type which provides electrical energy in response to a temperature gradient applied across the device exhibits both structural integrity and improved efficiency. The new thermoelectric device includes a plurality of thermoelectric elements, coupling means on opposite respective sides of the thermoelectric elements for interconnecting the elements electrically in accordance with a predetermined pattern, and encapsulant means including an encapsulant material covering the exposed surfaces of the thermoelectric elements. The encapsulant forms void spaces between the elements for providing effective thermal insulation between the elements and confining substantially all of the heat flow from the temperature gradient to through the elements. The coupling means includes electrically conductive plate segments for electrically interconnecting the thermoelectric elements.

Abstract: A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.

Abstract: There is disclosed new and improved photovoltaic devices which provide increased short circuit currents and efficiencies over that previously obtainable from prior devices. The disclosed devices include incident radiation directing means for directing at least a portion of the incident light through the active region or regions thereof at angles sufficient to substantially confine the directed radiation in the devices. This allows substantially total utilization of photogenerated electron-hole pairs. Further, because the light is directed through the active region or regions at such angles, the active regions can be made thinner to also increase collection efficiencies.The incident radiation directors can be random surface or bulk reflectors to provide random scattering of the light, or periodic surface or bulk reflector to provide selective scattering of the light.