Abstract: A system for a three-dimensional (“3D”) printed circuit board (“PCB”) to printed circuit board interface is provided. A first PCB includes first landing pads disposed on one or more edges of the first PCB. The first landing pads electrically couple to conductive pins or second landing pads disposed on a second PCB. The second landing pads may be disposed in a slot in the second PCB. The interface between the first landing pads and the second landing pads may provide various advantages over traditional PCB to PCB interfaces, such as, improved signal integrity, improved power integrity, increased contact density, decreased clock jitter, etc.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: Dynamic bus inversion (DBI) for programmable levels of a ratio of ones and zeros. A transmitting device identifies a number and/or ratio of ones and zeros in a noninverted version of a signal to be transmitted (“noninverted signal”) and a number and/or ratio of ones and zeros in an inverted version of the signal (“inverted signal”). The transmitting device can calculate whether a difference of ones and zeros in the noninverted signal or a difference of ones and zeros in the inverted signal provides a calculated average ratio of ones to zeros closer to a target ratio. The transmitting device sends the signal that achieves provides the calculated average ratio closer to the target ratio.

Abstract: A memory subsystem manages memory I/O impedance compensation by the memory device monitoring a need for impedance compensation. Instead of a memory controller regularly sending a signal to have the memory device update the impedance compensation when a change is not needed, the memory device can indicate when it is ready to perform an impedance compensation change. The memory controller can send an impedance compensation signal to the memory device in response to a compensation flag set by the memory or in response to determining that a sensor value has changed in excess of a threshold.

Abstract: A method is described. The method includes configuring first register space to establish ODT values of a data strobe signal trace of a DDR data bus. The method also includes configuring second register space to establish ODT values of a data signal trace of the DDR data bus. The ODT values for the data strobe signal trace are different than the ODT values for the data signal trace. The ODT values for the data strobe signal do not change when consecutive write operations of the DDR bus write to different ranks of a same DIMM.

Abstract: An apparatus is described that includes a memory channel driver circuit having first driver circuitry to drive a data signal on a memory channel and second driver circuitry to drive an echo cancellation signal on the memory channel. The echo cancellation signal includes echo cancellation pulses that follow corresponding pulses of the data signal by an amount of time that causes the echo cancellation pulses to reduce reflections of the corresponding pulses of the data signal at a memory device that is coupled to the memory channel.

Abstract: A memory subsystem triggers entry and exit of a memory device from low power mode with a chip select (CS) signal line. For a system where the command bus has no clock enable (CKE) signal line, the system can trigger low power modes with CS instead of CKE. The low power mode can include a powerdown state. The low power mode can include a self-refresh state. The memory device includes an interface to the command bus, and receives a CS signal combined with command encoding on the command bus to trigger a low power mode state change. The memory device can be configured to monitor the CS signal and selected other command signals while in low power mode. The system can send an ODT trigger while the memory device is in low power mode, even without a dedicated ODT signal line.

Abstract: Techniques and mechanisms for mitigating signal deterioration in communications between two circuit boards. In an embodiment, a packaged device accommodates coupling to a first circuit board which, in turn, accommodates connection to a second circuit board. In one such embodiment, an amplifier circuit of the packaged device includes an amplifier circuit which comprises a variable resistor and an active circuit element coupled thereto. The device receives via one of the circuit boards a control signal and a voltage which configure the amplifier circuit to provide an impedance matching for communication between the circuit boards. In another embodiment, the device comprises multiple common gate amplifiers which are variously configurable each to provide a respective impedance matching for communications between a motherboard and a dual in-line memory module.

Abstract: A method is described. The method includes receiving DDR memory channel signals from a motherboard through a larger DIMM motherboard connector. The method includes routing the signals to one of first and second smaller form factor connectors. The method includes sending the DDR memory channel signals to a DIMM that is connected to the one of the first and second smaller form factor connectors.

Abstract: Dynamic bus inversion (DBI) for programmable levels of a ratio of ones and zeros. A transmitting device identifies a number and/or ratio of ones and zeros in a noninverted version of a signal to be transmitted (“noninverted signal”) and a number and/or ratio of ones and zeros in an inverted version of the signal (“inverted signal”). The transmitting device can calculate whether a difference of ones and zeros in the noninverted signal or a difference of ones and zeros in the inverted signal provides a calculated average ratio of ones to zeros closer to a target ratio. The transmitting device sends the signal that achieves provides the calculated average ratio closer to the target ratio.

Abstract: Embodiments may relate to a connector. The connector may include a plurality of connector pins that are to communicatively couple an element of a printed circuit board (PCB) with an element of an electronic device when the element of the PCB and the element of the electronic device are coupled with the connector. The connector may also include an active circuit that is communicatively coupled with a pin of the plurality of pins. The active circuit may be configured to match an impedance of the element of the PCB with an impedance of the element of the electronic device. Other embodiments may be described or claimed.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: Techniques and mechanisms for providing termination for a plurality of chips of a memory device. In an embodiment, a memory device is an integrated circuit (IC) package which includes a command and address bus and a plurality of memory chips each coupled thereto. Of the plurality of memory chips, only a first memory chip is operable to selectively provide termination to the command and address bus. Of the respective on-die termination control circuits of the plurality of memory chips, only the on-die termination control circuit of the first memory chip is coupled via any termination control signal line to any input/output (I/O) contact of the IC package.

Abstract: Dynamic bus inversion (DBI) for programmable levels of a ratio of ones and zeros. A transmitting device identifies a number and/or ratio of ones and zeros in a noninverted version of a signal to be transmitted (“noninverted signal”) and a number and/or ratio of ones and zeros in an inverted version of the signal (“inverted signal”). The transmitting device can calculate whether a difference of ones and zeros in the noninverted signal or a difference of ones and zeros in the inverted signal provides a calculated average ratio of ones to zeros closer to a target ratio. The transmitting device sends the signal that achieves provides the calculated average ratio closer to the target ratio.

Abstract: A method is described. The method includes receiving DDR memory channel signals from a motherboard through a larger DIMM motherboard connector. The method includes routing the signals to one of first and second smaller form factor connectors. The method includes sending the DDR memory channel signals to a DIMM that is connected to the one of the first and second smaller form factor connectors.

Abstract: A method is described. The method includes configuring first register space to establish ODT values of a data strobe signal trace of a DDR data bus. The method also includes configuring second register space to establish ODT values of a data signal trace of the DDR data bus. The ODT values for the data strobe signal trace are different than the ODT values for the data signal trace. The ODT values for the data strobe signal do not change when consecutive write operations of the DDR bus write to different ranks of a same DIMM.

Abstract: An apparatus is described. The apparatus includes a semiconductor chip having cross-talk noise cancellation circuitry disposed between a disturber trace and a trace to be protected from cross-talk noise emanating from the disturber trace. The trace is to be coupled to a receiver disposed on a different semiconductor chip.

Abstract: A computing system is described. The computing system includes a memory controller having a double data rate memory interface. The double data rate memory interface has a first memory channel interface and a second memory channel interface. The computing system also includes a first DIMM slot and a second DIMM slot. The computing system also includes a first memory channel coupled to the first memory channel interface and the first DIMM slot, wherein the first memory channel's CA and DQ wires are not coupled to the second DIMM slot. The computing system also includes a second memory channel coupled to the second memory channel interface and the second DIMM slot, wherein the second memory channel's CA and DQ wires are not coupled to the first DIMM slot. The computing system also includes a back end memory channel that is coupled to the first and second DIMM slots.

Abstract: An apparatus is described. The apparatus includes an electro-mechanical interface having angled signal interconnects, wherein, the angling of the signal interconnects is to reduce noise coupling between the angled signal interconnects.

Abstract: A DIMM is described. The DIMM includes circuitry to simultaneously transfer data of different ranks of memory chips on the DIMM over a same data bus during a same burst write sequence.