Abstract: A compression device is used to increase intra-luminal pressure within the upper esophageal sphincter of a patient in order relieve an impact of an abnormal or defective upper esophageal sphincter anatomy, physiology, or functionality. In one implementation, the compression device is used in conjunction with an external pressure sensing device to determine the external pressure that is to be applied to the cricoid for a specific patient. The compression device can be a means for the management and/or treatment of abnormal upper esophageal sphincter functionality, or a means for strengthening an esophageal sphincter of a subject, or a means for curing esophageal reflux disease of a subject, or a means for improving vocal function in a subject, or a means for managing lung aspiration, or a means for applying cricoid pressure during anesthesia intubation, or a means for stabilizing body structures such as during medical imaging or radiation treatment.

Abstract: Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid , an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

Abstract: Solid metal compound coated colloidal particles are made through a process by coating metal compounds onto colloidal particle surfaces. More specifically, metal compound precursors react with the base solution to form solid metal compounds. The solid metal compounds are deposited onto the colloidal particle surfaces through bonding. Excess ions are removed by ultrafiltration to obtain the stable metal compound coated colloidal particle solutions. Chemical mechanical polishing (CMP) polishing compositions using the metal compound coated colloidal particles prepared by the process as the solid state catalyst, or as both catalyst and abrasive, provide uniform removal profiles across the whole wafer.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: An apparatus for selective eductive dispensing of multiple chemical fluids from separate fluid containers includes a motive fluid inlet; an eductor in fluid communication with said motive fluid inlet; a selector switch defining at least one inlet and an outlet therein, said inlet and outlet in fluid communication with one another and said outlet in fluid communication with said eductor and wherein said selector switch inlet is in selective fluid communication with said fluid containers depending on the position of the selector switch; and a valve located between said motive fluid inlet and said eductor, said valve selectively opened and closed by movement of said selector switch.

Abstract: A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

Abstract: A carrier for semiconductor wafers to be polished comprises a backing pad vulcanized to a pressure plate. The backing pad is formed of a rubber material such as neoprene, SBR or natural rubber. An adhesive film of a thermosetting, thermally reactive material forms an integral bond between the backing pad and pressure plate. The backing pad, adhesive film and pressure plate together comprise a nearly ideally elastic assembly. The exposed face of the backing pad is profiled to a desired profile without effecting crumbling of the rubber material.

Abstract: A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

Abstract: The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable.