Patents by Inventor James Albert Slinkman
James Albert Slinkman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180204926Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.Type: ApplicationFiled: March 15, 2018Publication date: July 19, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Michel J. Abou-Khalil, Alan Bernard Botula, Blaine Jeffrey Gross, Mark David Jaffe, Alvin Joseph, Richard A. Phelps, Steven M. Shank, James Albert Slinkman
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Patent number: 9978849Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.Type: GrantFiled: December 29, 2015Date of Patent: May 22, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Michel J. Abou-Khalil, Alan Bernard Botula, Blaine Jeffrey Gross, Mark David Jaffe, Alvin Joseph, Richard A. Phelps, Steven M. Shank, James Albert Slinkman
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Publication number: 20170186845Abstract: Methods form transistor structures that include, among other components, a substrate having an active region bordered by an isolation region, a gate insulator on the substrate, and a gate conductor on the gate insulator. First and second sections of the gate conductor are within the active region of the substrate, while a third section is in the isolation region of the substrate. The second section of the gate conductor tapers from the width of the first section to the width of the wider third section. The first section and the second section of the gate conductor have undercut regions where the corner of the gate conductor contacts the substrate. The third section of the gate conductor lacks the undercut regions. The gate insulator is relatively thicker in the undercut regions and is relatively thinner where the corner of the gate conductor lacks the undercut regions in the isolation region.Type: ApplicationFiled: December 29, 2015Publication date: June 29, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Michel J. Abou-Khalil, Alan Bernard Botula, Blaine Jeffrey Gross, Mark David Jaffe, Alvin Joseph, Richard A. Phelps, Steven M. Shank, James Albert Slinkman
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Patent number: 8872236Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.Type: GrantFiled: August 1, 2011Date of Patent: October 28, 2014Assignee: International Business Machines CorporationInventors: Alvin Jose Joseph, Ramana Murty Malladi, James Albert Slinkman
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Patent number: 8450806Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.Type: GrantFiled: March 31, 2004Date of Patent: May 28, 2013Assignee: International Business Machines CorporationInventors: Toshiharu Furukawa, Charles William Koburger, III, James Albert Slinkman
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Patent number: 8288821Abstract: A structure, and a method for forming the same. The structure includes a semiconductor substrate which includes a top substrate surface, a buried dielectric layer on the top substrate surface, N active semiconductor regions on the buried dielectric layer, N active devices on the N active semiconductor regions, a plurality of dummy regions on the buried dielectric layer, a protection layer on the N active devices and the N active semiconductor regions, but not on the plurality of dummy regions. The N active devices comprise first active regions which comprise a first material. The plurality of dummy regions comprise first dummy regions which comprise the first material. A first pattern density of the first active regions and the first dummy regions is uniform across the structure. A trench in the buried dielectric layer such that side walls of the trench are aligned with the plurality of dummy regions.Type: GrantFiled: August 26, 2009Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Alan Bernard Botula, David S. Collins, Alvin Jose Joseph, Howard Smith Landis, James Albert Slinkman
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Patent number: 8089126Abstract: Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.Type: GrantFiled: July 22, 2009Date of Patent: January 3, 2012Assignee: International Business Machines CorporationInventors: Alan Bernard Botula, David S. Collins, Alvin Jose Joseph, Howard Smith Landis, James Albert Slinkman, Anthony K. Stamper
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Publication number: 20110278570Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.Type: ApplicationFiled: August 1, 2011Publication date: November 17, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alvin Jose Joseph, Ramana Murty Malladi, James Albert Slinkman
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Patent number: 8020128Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.Type: GrantFiled: June 29, 2009Date of Patent: September 13, 2011Assignee: International Business Machines CorporationInventors: Alvin Jose Joseph, Ramana Murty Malladi, James Albert Slinkman
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Patent number: 7939896Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.Type: GrantFiled: November 6, 2009Date of Patent: May 10, 2011Assignee: International Business Machines CorporationInventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
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Publication number: 20110018060Abstract: Methods and structures for improving substrate loss and linearity in SOI substrates. The methods include forming damaged crystal structure regions under the buried oxide layer of SOI substrates and the structures included damaged crystal structure regions under the buried oxide layer of the SOI substrate.Type: ApplicationFiled: July 22, 2009Publication date: January 27, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alan Bernard Botula, David S. Collins, Alvin Jose Joseph, Howard Smith Landis, James Albert Slinkman, Anthony K. Stamper
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Publication number: 20100327280Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.Type: ApplicationFiled: June 29, 2009Publication date: December 30, 2010Applicant: International Business Machines CorporationInventors: Alvin Jose Joseph, Ramana Murty Malladi, James Albert Slinkman
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Publication number: 20100230752Abstract: A structure, and a method for forming the same. The structure includes a semiconductor substrate which includes a top substrate surface, a buried dielectric layer on the top substrate surface, N active semiconductor regions on the buried dielectric layer, N active devices on the N active semiconductor regions, a plurality of dummy regions on the buried dielectric layer, a protection layer on the N active devices and the N active semiconductor regions, but not on the plurality of dummy regions. The N active devices comprise first active regions which comprise a first material. The plurality of dummy regions comprise first dummy regions which comprise the first material. A first pattern density of the first active regions and the first dummy regions is uniform across the structure. A trench in the buried dielectric layer such that side walls of the trench are aligned with the plurality of dummy regions.Type: ApplicationFiled: August 26, 2009Publication date: September 16, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alan Bernard Botula, David S. Collins, Alvin Jose Joseph, Howard Smith Landis, James Albert Slinkman
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Patent number: 7772083Abstract: An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed.Type: GrantFiled: December 29, 2008Date of Patent: August 10, 2010Assignee: International Business Machines CorporationInventors: Alan Bernard Botula, Michael Lawrence Gautsch, Alvin Jose Joseph, Max Gerald Levy, James Albert Slinkman
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Publication number: 20100164075Abstract: An electrical structure and method of forming. The method includes providing a semiconductor structure comprising a semiconductor substrate, a buried oxide layer (BOX) formed over the semiconductor substrate, and a silicon on insulator layer (SOI) formed over and in contact with the BOX layer. The SOI layer comprises shallow trench isolation (STI) structures formed between electrical devices. A first photoresist layer is formed over the STI structures and the electrical devices. Portions of said first photoresist layer, portions of the STI structures, and portions of the BOX layer are removed resulting in formed trenches. Ion implants are formed within portions of the semiconductor substrate. Remaining portions of the first photoresist layer are removed. A dielectric layer is formed over the electrical devices and within the trenches. A second photoresist layer is formed over the dielectric layer. Portions of the second photoresist layer are removed.Type: ApplicationFiled: December 29, 2008Publication date: July 1, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alan Bernard Botula, Michael Lawrence Gautsch, Alvin Jose Joseph, Max Gerald Levy, James Albert Slinkman
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Patent number: 7704855Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.Type: GrantFiled: October 29, 2007Date of Patent: April 27, 2010Assignee: International Business Machines CorporationInventors: Toshiharu Furukawa, Charles William Koburger, III, James Albert Slinkman
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Publication number: 20100084736Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.Type: ApplicationFiled: November 6, 2009Publication date: April 8, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
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Patent number: 7675121Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.Type: GrantFiled: October 8, 2007Date of Patent: March 9, 2010Assignee: International Business Machines CorporationInventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
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Publication number: 20090093092Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.Type: ApplicationFiled: October 8, 2007Publication date: April 9, 2009Inventors: DINH DANG, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman
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Publication number: 20090090970Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.Type: ApplicationFiled: October 8, 2007Publication date: April 9, 2009Inventors: Dinh Dang, Thai Doan, Jessica Anne Levy, Max Gerald Levy, Alan Frederick Norris, James Albert Slinkman