Patents by Inventor James Allen Schlueter
James Allen Schlueter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220372332Abstract: Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive at a concentration equal and/or greater than (ยท) 2.0 wt. %; a planarization agent selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, polymers thereof, derivatives thereof, and combinations thereof, wherein the polymers have a molecular weight between 10 Dalton to 5 million Dalton, preferably 50 Dalton to 1 million Dalton; corrosion inhibitor; water soluble solvent; and optionally, rate boosting agent, pH adjusting agent, oxidizing agent, and chelator.Type: ApplicationFiled: September 22, 2020Publication date: November 24, 2022Applicant: Versum Materials US, LLCInventors: LU GAN, JAMES ALLEN SCHLUETER, DNYANESH CHANDRAKANT TAMBOLI
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Patent number: 11066575Abstract: Chemical mechanical polishing (CMP) compositions, systems and methods of using the compositions for polishing tungsten or tungsten-containing substrates. The compositions comprise nano-sized abrasive; metal compound coated organic polymer particles as solid state catalyst; oxidizer; tungsten corrosion inhibitor; and a water based liquid carrier.Type: GrantFiled: September 4, 2019Date of Patent: July 20, 2021Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Hongjun Zhou, James Allen Schlueter, Jo-Ann T. Schwartz
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Publication number: 20200308452Abstract: A novel process to make chemical mechanical planarization alkaline barrier slurries has been disclosed. The process provides the ability to solubilize surfactants comprise block co-polymers with low HLB numbers into the alkaline barrier slurries.Type: ApplicationFiled: May 14, 2020Publication date: October 1, 2020Applicant: Versum Materials US, LLCInventors: Maitland G. Graham, James Allen Schlueter
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Publication number: 20200277514Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer very high and tunable Cu removal rates for the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing compositions comprise solvent, abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefore; wherein at least one chelator is an amino acid or an amino acid derivative. Organic quaternary ammonium salt, corrosion inhibitor, pH adjustor and biocide can be used in the compositions.Type: ApplicationFiled: January 24, 2020Publication date: September 3, 2020Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
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Patent number: 10745589Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise ?-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.Type: GrantFiled: June 6, 2017Date of Patent: August 18, 2020Assignee: Versum Materials US, LLCInventors: Xiaobo Shi, Joseph Rose, Timothy Joseph Clore, James Allen Schlueter, Malcolm Grief, Mark Leonard O'Neill
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Publication number: 20200102476Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for barrier layer and interlayer dielectric (ILD) structure or patterned dielectric layer applications. The CMP compositions contain abrasive, chemical additive comprising polyprotic acid and its salt; corrosion inhibitor; and water soluble solvent; and optionally; second rate booster; a surfactant; pH adjusting agent; oxidizing agent; and chelator.Type: ApplicationFiled: September 20, 2019Publication date: April 2, 2020Applicant: Versum Materials US, LLCInventors: Lu Gan, James Allen Schlueter
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Publication number: 20200079976Abstract: Chemical mechanical polishing (CMP) compositions, systems and methods of using the compositions for polishing tungsten or tungsten-containing substrates. The compositions comprise nano-sized abrasive; metal compound coated organic polymer particles as solid state catalyst; oxidizer; tungsten corrosion inhibitor; and a water based liquid carrier.Type: ApplicationFiled: September 4, 2019Publication date: March 12, 2020Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Hongjun Zhou, James Allen Schlueter, Jo-Ann T. Schwartz
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Publication number: 20190172720Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.Type: ApplicationFiled: January 11, 2019Publication date: June 6, 2019Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
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Patent number: 10217645Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.Type: GrantFiled: July 15, 2015Date of Patent: February 26, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill
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Patent number: 10032644Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: GrantFiled: May 27, 2016Date of Patent: July 24, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
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Patent number: 10011741Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: March 2, 2016Date of Patent: July 3, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9978609Abstract: Copper chemical mechanical polishing (CMP) formulation, method and system are disclosed. The CMP formulation comprises particulate materials, at least two or more amino acids, oxidizer, corrosion inhibitor, and rest being water.Type: GrantFiled: January 20, 2016Date of Patent: May 22, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Xiaobo Shi, James Allen Schlueter, Joseph Rose, Mark Leonard O'Neill, Malcolm Grief
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Publication number: 20170362466Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise ?-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.Type: ApplicationFiled: June 6, 2017Publication date: December 21, 2017Applicant: Versum Materials US, LLCInventors: Xiaobo Shi, Joseph Rose, Timothy Joseph Clore, James Allen Schlueter, Malcolm Grief, Mark Leonard O'Neill
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Patent number: 9574110Abstract: A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are organic polymer molecules containing ethylene oxide repeating units having the general molecular structure of where n refers to the total numbers of the repeating unit giving the molecular weights of polyethylene oxide ranging from 100,000 to 8,000,000. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.Type: GrantFiled: September 30, 2014Date of Patent: February 21, 2017Assignee: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Maitland Gary Graham, James Allen Schlueter, Xiaobo Shi
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Publication number: 20160358790Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.Type: ApplicationFiled: May 27, 2016Publication date: December 8, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
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Publication number: 20160314989Abstract: Copper chemical mechanical polishing (CMP) formulation, method and system are disclosed. The CMP formulation comprises particulate materials, at least two or more amino acids, oxidizer, corrosion inhibitor, and rest being water.Type: ApplicationFiled: January 20, 2016Publication date: October 27, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, James Allen Schlueter, Joseph Rose, Mark Leonard O'Neill, Malcolm Grief
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Publication number: 20160177134Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: March 2, 2016Publication date: June 23, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Patent number: 9305806Abstract: Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.Type: GrantFiled: January 16, 2015Date of Patent: April 5, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, Krishna Murella, James Allen Schlueter, Jae Ouk Choo
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Patent number: 9305476Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: GrantFiled: May 12, 2015Date of Patent: April 5, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Theresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella, Martin Kamau Ngigi Mungai
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Publication number: 20160027657Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.Type: ApplicationFiled: July 15, 2015Publication date: January 28, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill