Patents by Inventor James B. Boyce
James B. Boyce has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8058182Abstract: Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.Type: GrantFiled: July 1, 2009Date of Patent: November 15, 2011Assignee: Xerox CorporationInventors: Chingwen Yeh, James B. Boyce, Kathleen Boyce, legal representative, Jingkuang Chen, Feixia Pan, Joel A. Kubby
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Publication number: 20110003405Abstract: Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.Type: ApplicationFiled: July 1, 2009Publication date: January 6, 2011Applicant: XEROX CORPORATIONInventors: Chingwen Yeh, James B. Boyce, Kathleen Boyce, Jingkuang Chen, Feixia Pan, Joel A. Kubby
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Patent number: 7863704Abstract: A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.Type: GrantFiled: February 25, 2009Date of Patent: January 4, 2011Assignee: Xerox CorporationInventors: JengPing Lu, James B. Boyce, Kathleen Dore Boyce, legal representative
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Patent number: 7863703Abstract: A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.Type: GrantFiled: February 25, 2009Date of Patent: January 4, 2011Assignee: Xerox CorporationInventors: JengPing Lu, James B. Boyce, Kathleen Dore Boyce, legal representative
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Patent number: 7710371Abstract: Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume.Type: GrantFiled: December 16, 2004Date of Patent: May 4, 2010Assignee: Xerox CorporationInventors: Ping Mei, Jurgen Daniel, James B. Boyce, Kathleen Dore Boyce, legal representative, Jackson Ho, Rachel Lau, Yu Wang
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Publication number: 20090160007Abstract: A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.Type: ApplicationFiled: February 25, 2009Publication date: June 25, 2009Applicant: PALO ALTO RESEARCH CENTER, INC.Inventors: JengPing Lu, James B. Boyce, Kathleen Dore Boyce
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Publication number: 20090160006Abstract: A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.Type: ApplicationFiled: February 25, 2009Publication date: June 25, 2009Applicant: Palo Alto Research Center, Inc.Inventors: JengPing Lu, James B. Boyce, Kathleen Dore Boyce
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Patent number: 7338833Abstract: A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.Type: GrantFiled: February 7, 2002Date of Patent: March 4, 2008Assignee: Xerox CorporationInventors: Jeng Ping Lu, Ping Mei, Francesco Lemmi, Robert A. Street, James B. Boyce
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Patent number: 7227237Abstract: A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.Type: GrantFiled: December 22, 2003Date of Patent: June 5, 2007Assignee: Palo Alto Research Center IncorporatedInventors: JengPing Lu, Kathleen Dore Boyce, legal representative, James B. Boyce, deceased
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Patent number: 6818535Abstract: An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.Type: GrantFiled: October 28, 2002Date of Patent: November 16, 2004Assignee: Xerox CorporationInventors: Jeng Ping Lu, Ping Mei, James B. Boyce
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Patent number: 6710370Abstract: An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.Type: GrantFiled: January 7, 2002Date of Patent: March 23, 2004Assignee: Xerox CorporationInventors: Robert A. Street, James B. Boyce, John C. Knights
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Publication number: 20030127647Abstract: An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.Type: ApplicationFiled: January 7, 2002Publication date: July 10, 2003Inventors: Robert A. Street, James B. Boyce, John C. Knights
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Patent number: 6586318Abstract: An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.Type: GrantFiled: December 28, 1999Date of Patent: July 1, 2003Assignee: Xerox CorporationInventors: Jeng Ping Lu, Ping Mei, James B. Boyce
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Publication number: 20030067037Abstract: An improved method and system for laser doping a semiconductor material is described. In the invention, phosphorous nitride is used as a dopant source. The phosphorous nitride is brought into close proximity with a region of the semiconductor to be doped. A pulse of laser light decomposes the phosphorous nitride and briefly melts the region of semiconductor to be doped to allow incorporation of dopant atoms from the phosphorous nitride into the semiconductor.Type: ApplicationFiled: October 28, 2002Publication date: April 10, 2003Applicant: Xerox CorporationInventors: Jeng Ping Lu, Ping Mei, James B. Boyce
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Publication number: 20020089026Abstract: A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.Type: ApplicationFiled: February 7, 2002Publication date: July 11, 2002Inventors: Jeng Ping Lu, Ping Mei, Francesco Lemmi, Robert A. Street, James B. Boyce
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Patent number: 6384461Abstract: A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.Type: GrantFiled: October 15, 1999Date of Patent: May 7, 2002Assignee: Xerox CorporationInventors: Jeng Ping Lu, Ping Mei, Francesco Lemmi, Robert A. Street, James B. Boyce
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Patent number: 6300648Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.Type: GrantFiled: December 28, 1999Date of Patent: October 9, 2001Assignee: Xerox CorporationInventors: Ping Mei, Jeng Ping Lu, Francesco Lemmi, Robert A. Street, James B. Boyce
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Patent number: 6288435Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.Type: GrantFiled: December 28, 1999Date of Patent: September 11, 2001Assignee: Xerox CorporationInventors: Ping Mei, Jeng Ping Lu, Francesco Lemmi, Robert A. Street, James B. Boyce
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Patent number: 6252215Abstract: A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Gate line and drive voltage line synchronization is provided.Type: GrantFiled: April 28, 1998Date of Patent: June 26, 2001Assignee: Xerox CorporationInventors: Ping Mei, Andrew J. Moore, Raj B. Apte, Steven E. Ready, Robert A. Street, James B. Boyce
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Patent number: 6236831Abstract: A method and apparatus for recycling marking surfaces such as office paper is described. The system scans a marking surface, determines the location of printing on the marking surface and deposits erasing material directly over the printing. Because the distribution of erasing material is confined to the printed areas, the use of erasing material is minimized. The described system can be easily adapted for use in traditional copying systems to recycle paper.Type: GrantFiled: June 29, 1999Date of Patent: May 22, 2001Assignee: Xerox CorporationInventors: Ping Mei, Jaan Noolandi, James B. Boyce