Abstract: A catalyst system for the polymerization of alpha-olefins comprising:(a) a solid precursor comprising the reaction product of (i) a halogenated vanadium compound wherein the vanadium has a valence of 2 to 5; (ii) a magnesium compound; and (iii) an inside electron donor wherein the molar ratio of inside electron donor to vanadium compound is in the range of about 0.2:1 to about 2:1; the atomic ratio of magnesium to vanadium is in the range of about 3:1 to about 40:1; and the reaction product (A) is a solid having a surface area greater than about 10 square meters per gram or (B) is adsorbed on the surface of an inorganic support having a surface area greater than about 10 square meters per gram;(b) a hydrocarbyl aluminum cocatalyst wherein the atomic ratio of aluminum to vanadium is in the range of about 2:1 to about 300:1; and(c) an outside electron donor wherein the molar ratio of outside electron donor to aluminum is in the range of about 0.02:1 to about 1:1.

Abstract: New Method of buffering silicon and similar semiconductor wafers with appropriate metal oxide layers which, in turn, have been found to be excellent substrates for MOS depositions without interaction with the semiconductor surface, and novel buffered wafers produced thereby.

Abstract: Process for producing metal oxide superconductor (MOS)-polymer (P) composites by (i) mixing a monomer and initiator with MOS followed by in-situ polymerization of the monomer, (ii) mixing MOS with a polymer solution followed by removal of solvent, (iii) blending MOS with a molten polymer and processing the MOS-P composite obtained by processes (i), (ii), or (iii) by extrusion or molding, and (iv) mixing MOS with monomers or prepolymers with or without catalysts to give MOS-P composite through reaction-processing, the polymers being one of all thermoplastic and thermoset resins, thermoplastic elastomers, or elastomers, the last with or without crosslinks.

Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.

Abstract: New transition and inner transition metal chelate polymers and method for nthesizing thereof. Such polymers are used as positive or negative resists of high sensitivity for lithographic purposes in integrated circuit chip fabrication requiring submicron resolution. The polymers when irradiated undergo scission or crosslinking events which affects their solubility in developer solvents. They are synthesized either in non-aqueous solution with subsequent removal of excess solvent or interfacially with almost instantaneous precipitation of the polymer at the interface.

Abstract: Propylene polymer compositions that are easily plated with metals to provide strongly adherent coatings are provided. Typically, such compositions consist essentially of:a. 100 parts by weight of a propylene polymer,b. 20-150 parts by weight of an electrically conductive carbon black,c. 0.2-2.5 parts by weight of sulfur andd. 0.5-10 parts by weight of a maleic anhydride-modified propylene polymer.

Abstract: Disclosed are brominated azido fire-retardants having the formula(Br).sub.x --R--[(R').sub.n --A].sub.ywhere R is an organic radical; R' is selected from ##STR1## where R" is selected from alkylene, cycloalkylene, alkylene cycloalkylene, arylene, alkylene arylene, and the foregoing radicals with bromo substituents, and b is an integer from 1 to 10; A is selected from ##STR2## and --SO.sub.2 N.sub.3 where z is 0 or 1; x is at least 3; n is 0 or 1; and y is an integer from 1 to 100. Also disclosed is the process of preparing fire-retardant natural and synthetic fibers and films which comprises contacting the surface of said fiber or film with a brominated azido fire-retardant and initiating reaction of the fire-retardant with the fiber or film by heat or irradiation.

Abstract: Disclosed are brominated azido fire-retardants having the formula(Br).sub.x --R--[(R').sub.n --A].sub.yWhere R is an organic radical; R' is selected from ##EQU1##--O(R"-O).sub.b --R"--, ##EQU2## where R" is selected from alkylene, cycloalkylene, alkylene cycloalkylene, arylene, alkylene arylene, and the foregoing radicals with bromo substituents, and b is an integer from 1 to 10; A is selected from ##EQU3## and --SO.sub.2 N.sub.3 where z is 0 or 1; x is at least 3; n is 0 or 1; and y is an integer from 1 to 100. Also disclosed is the process of preparing fire-retardant natural and synthetic fibers and films which comprises contacting the surface of said fiber or film with a brominated azido fire-retardant and initiating reaction of the fire-retardant with the fiber or film by heat or irradiation.