Abstract: A processing chamber with a showerhead and a chuck is cleaned using an injection of a gaseous cleaning agent through an aperture in the chuck into the processing chamber. Because the aperture is located directly under the showerhead, a portion of the gaseous cleaning agent passes through the face plate of the showerhead so that the inside of the showerhead may be cleaned as well. By applying a radio frequency power supply between the chuck and the showerhead, for example, by a coil located between the chuck and showerhead or applying the power directly to the chuck and the showerhead, the gaseous cleaning agent forms a plasma. Thus, the portion of the gaseous cleaning agent that passes through the face plate and into the showerhead is a plasma. The plasma is pumped out of the chamber through a pumping port so that the plasma continuously flows through the processing chamber.

Abstract: A structure and method are provided to exclude polymer film deposition from the backside and edge of a wafer during CVD processing. An electrostatic chuck (ESC), with radial and circular channels and grooves on its surface, secures a wafer to be processed. An inert gas, preferably argon, flows outward from these channels and grooves along the backside of the wafer. A uniform flow of the gas from underneath the wafer into the process chamber prevents monomer molecules from depositing on the wafer backside. For edge exclusion, a showerhead is placed slightly above the outer diameter of the wafer to keep most of the monomer molecules within the process chamber and redirect the remaining monomer molecules across the surface of the wafer below the outer edge of the showerhead.

Abstract: A processing chamber with a showerhead and a chuck is cleaned using an injection of a gaseous cleaning agent through an aperture in the chuck into the processing chamber. Because the aperture is located directly under the showerhead, a portion of the gaseous cleaning agent passes through the face plate of the showerhead so that the inside of the showerhead may be cleaned as well. By applying a radio frequency power supply between the chuck and the showerhead, for example, by a coil located between the chuck and showerhead or applying the power directly to the chuck and the showerhead, the gaseous cleaning agent forms a plasma. Thus, the portion of the gaseous cleaning agent that passes through the face plate and into the showerhead is a plasma. The plasma is pumped out of the chamber through a pumping port so that the plasma continuously flows through the processing chamber.

Abstract: A structure and method exclude polymer film deposition from the backside and edge of a wafer during CVD processing. An electrostatic chuck (ESC), with radial and circular channels and grooves on its surface, secures a wafer to be processed. An inert gas, preferably argon, flows outward from these channels and grooves along the backside of the wafer. A uniform flow of the gas from underneath the wafer into the process chamber prevents monomer molecules from depositing on the wafer backside. For edge exclusion, a showerhead is placed slightly above the outer diameter of the wafer to keep most of the monomer molecules within the process chamber and redirect the remaining monomer molecules across the surface of the wafer below the outer edge of the showerhead.

Abstract: An axial tomographic scanner having means for supporting a plurality of cables leading to the X-ray source including a yoke upon which the X-ray source is mounted, first bracket means mounted on the yoke adjacent the X-ray source for restraining cable movement, second bracket means mounted on the yoke remote from the X-ray source for restraining cable movement, and means disposed between the first and second bracket means for maintaining the cables passing therethrough in a gradual arc while preventing undue flexing of the cables and undesirable movement of the cables into interfering position with other components of the axial tomographic scanner.