Abstract: Apparatus and methods are disclosed for OTEC plant. The device can be deployed in ocean with depth of 600 meter or more.

Abstract: Apparatus and methods are disclosed for OTEC plant. The device can be deployed in ocean with depth of 600 meter or more.

Abstract: An integrated circuit chip (10) includes a substrate (12), a plurality of transistors (16) provided in the substrate (12), a circuit pattern (14) provided on a top surface of the substrate (12) and a metal layer (42) comprising at least two metals in substantially eutectic proportions provided on a bottom surface of the substrate, the bottom surface of the metal layer (42) being exposed. The integrated circuit chip (10) can be attached to a further substrate, e.g., a housing, using automated attachment techniques. The chip (10) can be attached to the housing by picking up the integrated circuit chip (10) with the metal layer (42) provided on the bottom surface thereof and placing the integrated circuit chip (10) onto a housing so the bottom surface of the integrated circuit chip (10) faces the housing with the metal layer (42) there between; and then heating the metal layer (42) to a temperature above its eutectic temperature to melt the metal layer and attach the integrated circuit chip (10) to the housing.

Abstract: An integrated circuit chip (10) includes a substrate (12), a plurality of transistors (16) provided in the substrate (12), a circuit pattern (14) provided on a top surface of the substrate (12) and a metal layer (42) comprising at least two metals in substantially eutectic proportions provided on a bottom surface of the substrate, the bottom surface of the metal layer (42) being exposed. The integrated circuit chip (10) can be attached to a farther substrate, e.g., a housing, using automated attachment techniques. The chip (10) can be attached to the housing by picking up the integrated circuit chip (10) with the metal layer (42) provided on the bottom surface thereof and placing the integrated circuit chip (10) onto a housing so the bottom surface of the integrated circuit chip (10) faces the housing with the metal layer (42) there between; and then heating the metal layer (42) to a temperature above its eutectic temperature to melt the metal layer and attach the integrated circuit chip (10) to the housing.

Abstract: A bending mechanism for flexible waveguide uses a combination of an elongate arm (1), two short bracket arms (3 & 7) and a gear train (5, 11, 13 & 9) linking the bracket arms to bend a flexible waveguide (24) over a range of positions. The bend is formed to the shape of a circular arc the radius of which varies with the position. Each short bracket arm is pivotally connected (15 & 17) to a respective end of the elongate arm and to a respective one of the waveguide's two end flanges (23 & 25). Each bracket arm contains a gear that rotates with the respective bracket arm about the bracket arm's pivot; and an even number of gears interlinks those gears whereby pivotal movement of one of the flanges in a clockwise direction produces an effective relative pivotal movement of the other flange.

Abstract: A method of fabricating an electrical interconnect are provided. A first transparent dielectric layer is disposed on top of a support structure. A conductive circuit layer is plated above the first dielectric layer. Separate conductive layers are plated on top of the conductive circuit layer to produce conductive vias. A second transparent dielectric layer is disposed around the conductive layers. Contact tips are electrically connected to the top surface of the separate conductive layers. The interconnect may be visually aligned so that the contact tips brought into contact with target connections. In addition, the support structure may be partially removed to allow a flexible interconnect.

Abstract: An apparatus for the bending of a flexible conduit having first and second ends includes first and second assemblies which are fixed for relative rotation with the first and second ends. An axis of rotation passes through the first and second assemblies. The apparatus further includes a driven gear fixed for rotation with the first assembly. The driven gear is adapted to cooperate with a drive gear to rotate the first assembly with respect to the second assembly. The first assembly includes a first extendable portion which attaches directly to the first end. Similarly, the second assembly includes a second extendable portion which attaches directly to the second end. The first and second assemblies function to vary the distance between the axis of rotation and the first and second ends as the first assembly is rotated with respect to the second assembly.

Abstract: This invention discloses a semiconductor bulk acoustic resonator including at least one thin film piezoelectric layer positioned on a semiconductor substrate. The acoustic resonator includes a heating ring positioned around the outer perimeter of the piezoelectric layer in order to heat the piezoelectric layer to a desirable elevated temperature. A heat sensing film fabricated on the piezoelectric layer monitors the temperature of the piezoelectric layer such that the heating ring maintains the piezoelectric layer at a constant temperature. By this, an oscillator circuit using this semiconductor bulk acoustic resonator as the frequency controlling element can maintain a constant frequency over a wide range of temperatures which may affect frequency stability.