Abstract: An aeration apparatus including a tank defining a cavity to receive a liquid, at least one aerator positioned within the tank, and a plenum connected to a bottom surface of the tank and in fluid communication with the at least one aerator, in which an air flow is directed from the plenum into the at least one aerator to deliver air to the liquid in the tank to oxidize the fluid.

Abstract: An aeration apparatus includes at least one aerator, a frame fluidly connected to the at least one aerator, and an aeration source fluidly connected to the frame. The aeration source may be configured to deliver air to the at least one aerator via the frame to oxidize fluid held in the at least one aeration chamber.

Abstract: An aeration apparatus including a tank defining a cavity to receive a liquid, at least one aerator positioned within the tank, and a plenum connected to a bottom surface of the tank and in fluid communication with the at least one aerator, in which an air flow is directed from the plenum into the at least one aerator to deliver air to the liquid in the tank to oxidize the fluid.

Abstract: A variable-frequency I-V measurement system for testing the IC device, such as a GaAs MESFET, has probes for measuring the bias voltage, drain voltage, drain current, and gate signal voltage, a gate signal source, and a computer controller for controlling the gate signal source to provide, in sequence, gate signals varied in waveform, voltage, and frequency, in order to measure the I-V characteristics of the device in response to variable frequency gate signals. Values for maximum drain current (Imax) and percentage drop in Imax at different frquencies are derived and used to predict the RF performance characteristics of the device and to select good wafers early in the fabrication process, as well as for non-destructive testing of frequency dispersion effects on the device.

Abstract: A light emitting diode and a method for the manufacture thereof is described. The diode may be formed by liquid phase epitaxial growth from a single melt including p and n conductivity type dopants. The p conductivity type layer grows first followed by the n conductivity layer.