Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.

Abstract: A method for carrying out positive tone lithography with a carbon dioxide solvent system is carried out by (a) providing a substrate having a polymer resist layer formed thereon; (b) exposing at least one portion of the polymer resist layer to radiant energy to form at least one light field region in the polymer resist layer; and then (c) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system preferably comprising a polar group, under conditions in which the at least one light field region is preferentially removed.

Abstract: A system for processing microelectronic substrates in a liquid or supercritical carbon dioxide process media comprises (a) a plurality of carbon dioxide processing chambers; (b) a carbon dioxide supply vessel operatively associated with each of the carbon dioxide processing chambers; (c) a first process chemical supply vessel operatively associated with at least one of the carbon dioxide processing chambers; (d) a waste collection vessel operatively associated with at least one of the carbon dioxide processing chambers; and (e) a controller operatively associated with the plurality of processing chambers, the carbon dioxide supply vessel, the vacuum pump if present, the first process chemical supply vessel, and the waste collection vessel, the controller configured to independently process microelectronic substrates in each of the processing chambers.

Abstract: An apparatus for cleaning a microelectronic substrate includes a pressure chamber, a supply of a process liquid including dense phase CO2 fluidly connected to the chamber and a distilling system. Distilling system includes a still fluidly connected to the chamber and operative to separate CO2 from the process fluid. The distilling system is operative to re-introduce the separated CO2 into the chamber or a further chamber.

Abstract: A method of reducing undesired topographic features, increasing film density, and/or increasing adhesion to an underlying substrate in a polymer film formed on a microelectronic substrate, comprises: (a) providing a microelectronic substrate, the substrate having a polymer film deposited thereon; (b) contacting the substrate to carbon dioxide (optionally containing additional ingredients such as cosolvents or chemical intermediates); and (c) elevating the pressure of the carbon dioxide to plasticize the polymer film and reduce undesired topographic features, increase film density, and/or increase adhesion of the film to the underlying substrate.

Abstract: A method of cleaning and removing water, entrained solutes and particulate matter during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide cleaning composition, the cleaning composition comprising carbon dioxide and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide drying composition, and subjecting the densified carbon dioxide drying composition to cyclical phase modulation during at least a portion of the immersing step to thereby facilitating cleaning; and then (d) removing the cleaning composition from the surface portion.

Abstract: According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

Abstract: A method for dry-cleaning articles such as fabrics and clothing in carbon dioxide while concurrently applying a sizing agent to the articles comprises contacting an article to be cleaned with a liquid dry cleaning composition for a time sufficient to clean the fabric. The liquid dry-cleaning composition comprises a mixture of carbon dioxide, a surfactant, a sizing agent. An organic co-solvent is preferably included. After the contacting step, the article is separated from the liquid dry cleaning composition. The method is preferably carried out at ambient temperature. Preferred sizing agents are low molecular weight hydrocarbon resins. The surfactant is preferably one that does not contain a CO2-philic group. The organic co-solvent is preferably an alkane and has a flash point above 140° F.