Abstract: In one aspect, an apparatus includes a plating cell, a degassing device configured to remove oxygen from the plating solution prior to the plating solution flowing into the plating cell; an oxidation station configured to increase an oxidizing strength of the plating solution after the plating solution flows out of the plating cell; and a controller. The controller includes program instructions for causing a process that includes operations of: reducing an oxygen concentration of the plating solution where the plating solution contains a plating accelerator; then, contacting a wafer substrate with the plating solution having reduced oxygen concentration and electroplating a metal such that the electroplating causes a net conversion of the accelerator to a less-oxidized accelerator species within the plating cell; then increasing the oxidizing strength of the plating solution causing a net re-conversion of the less-oxidized accelerator species back to the accelerator outside the plating cell.

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces and cooling the metal surfaces are disclosed. By exposing a metal oxide surface to remote plasma, the metal oxide surface on a substrate can be reduced to pure metal. A remote plasma apparatus can treat the metal oxide surface as well as actively cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus can be configured to actively cool the substrate during and/or after reducing the metal oxide to pure metal using an active cooling system. The active cooling system can include one or more of an actively cooled pedestal, an actively cooled showerhead, and one or more cooling gas inlets for delivering cooling gas to cool the substrate.

Abstract: In one aspect, an apparatus includes a plating cell, a degassing device configured to remove oxygen from the plating solution prior to the plating solution flowing into the plating cell; an oxidation station configured to increase an oxidizing strength of the plating solution after the plating solution flows out of the plating cell; and a controller. The controller includes program instructions for causing a process that includes operations of: reducing an oxygen concentration of the plating solution where the plating solution contains a plating accelerator; then, contacting a wafer substrate with the plating solution having reduced oxygen concentration and electroplating a metal such that the electroplating causes a net conversion of the accelerator to a less-oxidized accelerator species within the plating cell; then increasing the oxidizing strength of the plating solution causing a net re-conversion of the less-oxidized accelerator species back to the accelerator outside the plating cell.

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal.

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract: Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate is reduced. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, move the substrate towards a substrate support in the processing chamber, form a remote plasma of a reducing gas species, expose a metal seed layer of the substrate to the remote plasma, and expose the substrate to a cooling gas. In some embodiments, the remote plasma apparatus is part of an electroplating apparatus.

Abstract: Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal.

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 100 parts per million or less of an accelerator. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is electroplated with the plating solution onto the wafer substrate in the plating cell. After electroplating the metal onto the wafer substrate, an oxidizing strength of the plating solution is increased.

Abstract: A process and apparatus for drawing polyamide yarn in which the yarn having a lubricating finish is drawn while being spirally advanced in frictional contact with the outer surface of a yarn draw assist element. In such process and apparatus, the outer surface of the draw assist element moves at a speed at least 100 times slower than the speed at which the yarn is advanced. From the draw assist element, the yarn directly advances to a roll initial contact location on a pair of space-apart heated rolls and spirally advances on the rolls through at least one wrap in contact with the outwardly-facing surfaces of the heated rolls. The distance that the yarn spirally advances longitudinally in the wrap can be said to define the wrap advance on the rolls. The roll initial contact location of the heated rolls is oscillated by moving the outer surface of the draw assist element in relation to the pair of heated rolls to oscillate the wrap on the rolls a distance which is at least equal to the wrap advance.

Abstract: A yarn heating element wherein fixed elongated core having a heater therein serves as a support for a sleeve rotatably mounted to and telescoped over the core. The space between the core and sleeve can be varied along their lengths for controlling heat radiated from the core to the shell to control the temperature profile along the length of the shell. Varying the winding density of the heater can serve the same purpose.

Abstract: A flat, hollow, vertically elongated door panel has an open bottom. A movable piece is located inside the panel and can move up or down through the bottom. Horizontal bottom pieces are attached to the movable piece and both the bottom and movable pieces are spring-loaded downwardly.