Abstract: Neuroelectronic devices are disclosed which use charge-coupled detector array devices to stimulate, monitor and record neural network activity and response. The method and apparatus described herein uses vacuum-arc-plasma based methods of surface modification as a tool for forming large patterned neuronal arrays on substrates. The basic device features a charge coupled detector device array (CCD) having a thin protective film over the CCD, a thin patterned film to promote neuron growth, and an insulator. Methods for stimulating and monitoring stimulated and spontaneous electrical activity in individual neurons of the array can be carried out by the apparatus described.

Abstract: A miniature (dime-size in cross-section) vapor vacuum arc plasma gun is described for use in an apparatus to produce thin films. Any conductive material can be layered as a film on virtually any substrate. Because the entire apparatus can easily be contained in a small vacuum chamber, multiple dissimilar layers can be applied without risk of additional contamination. The invention has special applications in semiconductor manufacturing.

Abstract: An apparatus and method for coating or layering a surface with a metal utilizing a metal vapor vacuum arc plasma source. The apparatus includes a trigger mechanism for actuating the metal vacuum vapor arc plasma source in a pulsed mode at a predetermined rate. The surface or substrate to be coated or layered is supported in position with the plasma source in a vacuum chamber. The surface is electrically biased for a selected period of time during the pulsed mode of operation of the plasma source. Both the pulsing of the metal vapor vacuum arc plasma source and the electrical biasing of the surface are synchronized for selected periods of time.

Abstract: An ion source utilizing a cathode and anode for producing an electric arc therebetween. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma leaves the generation region and expands through another regon. The density profile of the plasma may be flattened using a magnetic field formed within a vacuum chamber. Ions are extracted from the plasma to produce a high current broad on beam.