Abstract: Processes for producing stable Mn4+ doped phosphors include dispersing a compound of formula I in a solution comprising a compound of formula II to form a dispersion; applying pressure to the dispersion at a temperature less than 200° C. to form a phosphor product; and contacting the phosphor product with a fluorine-containing oxidizing agent in gaseous form at an elevated temperature; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4+ doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ?4%. A backlight device including the lighting apparatus is also presented.

Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source capable of producing blue light of high power density, the semiconductor light source radiationally coupled to a phosphor of formula I in a monolithic form selected from single crystal and ceramic, Ax (M, Mn)Fy (I) where A is Li, Na, K, Rb, Cs, or a combination thereof, M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof, x is an absolute value of a charge of an [MFy] ion; and y is 5, 6, or 7.

Abstract: Provided herein are methods and compositions which allow for efficient inspection, maintenance and repair of ceramic coatings.

Abstract: A lighting apparatus includes an LED light source radiationally coupled to a composite material including a phosphor of formula I and a thermally conductive material dispersed in at least a portion of a binder material. The thermally conductive material includes a material selected from the group consisting of indium oxide, tin oxide, indium tin oxide, calcium oxide, barium oxide, strontium oxide, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, barium hydroxide, strontium hydroxide, zinc hydroxide, aluminum phosphate, magnesium phosphate, calcium phosphate, barium phosphate, strontium phosphate, diamond, graphene, polyethylene nanofibers, carbon nanotubes, silver metal nanoparticles, copper metal nanoparticles, gold metal nanoparticles, aluminum metal nanoparticles, boron nitride, silicon nitride, an alkali metal halide, calcium fluoride, magnesium fluoride, a compound of formula II, and combinations thereof.

Abstract: A process for treating a luminescent halogen-containing material includes contacting the luminescent halogen-containing material with an atmosphere comprising a halogen-containing oxidizing agent for a period of at least about two hours. The luminescent halogen-containing material has a composition other than (i) Ax[MFy]:Mn4+, where A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7; (ii) Zn2[MF7]:Mn4+, where M is selected from Al, Ga, In, and combinations thereof; (iii) E[MF6]:Mn4+, where E is selected from Mg, Ca, Sr, Ba, Zn, and combinations thereof; and where M is selected from Ge, Si, Sn, Ti, Zr, and combinations thereof; or (iv) Ba0.65Zr0.35F2.70:Mn4+.

Abstract: A phosphor composition is derived from combining K2SiF6:Mn4+ in solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I: A3[MF6], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I: A3[MF6] has a water solubility lower than a water solubility of K2SiF6. A lighting apparatus including the phosphor composition is also provided.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I includes gradually adding a first solution comprising a source of M and HF and a second solution comprising a source of Mn to a reactor, in the presence of a source of A and an anion selected from phosphate, sulfate, acetate, and combinations thereof, to form a product liquor comprising the Mn+4 doped phosphor. The process also includes gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant. A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: Processes for preparing color stable red-emitting phosphors include contacting a complex fluoride phosphor of formula I with a first fluorine-containing oxidizing agent in gaseous form at a first temperature ranging from 200° C. to 700° C. to form a first product phosphor, contacting the first product phosphor in particulate form with a solution of a compound of formula II in aqueous hydrofluoric acid to form a treated phosphor, and contacting the treated phosphor with a second fluorine-containing oxidizing agent in gaseous form at a second temperature <225° C., AxMFy:MN4+??I AxMFy??II wherein A is independently at each occurrence Li, Na, K, Rb, Cs or a combination thereof, M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof, x is absolute value of the charge of the MFy ion; and y is 5, 6 or 7.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy|:Mn+4??I includes gradually adding a first solution to a second solution and periodically discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4?? I includes combining a first solution comprising a source of A and a second solution comprising H2MF6 in the presence of a source of Mn, to form the Mn+4 doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein a value of a Hammett acidity function of the first solution is at least ?0.9. Particles produced by the process may have a particle size distribution with a D50 particle size of less than 10 ?m.

Abstract: Materials and optical components formed thereof that are suitable for use in lighting units to obtain or approximate white light illumination, including lighting units that utilize one or more light-emitting diodes (LEDs) as a light source.

Abstract: A process for preparing a Mn+4 doped phosphor of formula I Ax[MFy]:Mn+4??I includes gradually adding a first solution to a second solution gradually discharging the product liquor from the reactor while volume of the product liquor in the reactor remains constant; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7. The first solution includes a source of M and HF and the second solution includes a source of Mn to a reactor in the presence of a source of A.

Abstract: A process for treating a luminescent halogen-containing material includes contacting the luminescent halogen-containing material with an atmosphere comprising a halogen-containing oxidizing agent for a period of at least about two hours. The luminescent halogen-containing material has a composition other than (i) Ax[MFy]:Mn4+, where A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7; (ii) Zn2[MF7]:Mn4+, where M is selected from Al, Ga, In, and combinations thereof; (iii) E[MF6]:Mn4+, where E is selected from Mg, Ca, Sr, Ba, Zn, and combinations thereof; and where M is selected from Ge, Si, Sn, Ti, Zr, and combinations thereof; or (iv) Ba0.65Zr0.35F2.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A coated phosphors that include a shell comprising a first Medoped phosphor of formula I Ax[MFy]:Mn4+??I directly disposed on a core comprising a second phosphor. The second phosphor is a material other than a compound of formula I or formula II Ax[MFy]??II wherein A is, independently at each occurrence, Li, Na, K, Rb, Cs, or a combination thereof; M is, independently at each occurrence, Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A process for synthesizing a Mn4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. Ax[MFy]:Mn4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.