Patents by Inventor James F. Ziegler
James F. Ziegler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6429755Abstract: Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: GrantFiled: January 30, 2001Date of Patent: August 6, 2002Assignee: International Business Machines CorporationInventors: James L. Speidell, James F. Ziegler
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Patent number: 6399406Abstract: Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electromechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.Type: GrantFiled: April 23, 2001Date of Patent: June 4, 2002Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Christopher Jhanes, Leathen Shi, James L. Speidell, James F. Ziegler
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Patent number: 6391674Abstract: This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: GrantFiled: December 28, 2000Date of Patent: May 21, 2002Assignee: International Business Machines CorporationInventor: James F. Ziegler
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Patent number: 6348846Abstract: A structure (and method) for tuning a resonant structure, includes a resonant structure including either a predetermined material coating provided on either a bar or a cantilever, or a lightly doped single crystal semiconductor material, and a circuit for providing a variable field adjacent the resonant structure, with the length or at least one of the elastic constants of the resonant structure changing with the application of the variable magnetic or electric field, respectively, thereby to selectively tune the resonant structure.Type: GrantFiled: October 14, 1999Date of Patent: February 19, 2002Assignee: International Business Machines CorporationInventors: Robert Jacob von Gutfeld, James F. Ziegler
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Patent number: 6337627Abstract: The invention describes methods for locating a treatment device disposed within a living body by means of magnetic fields that are produced by Barkhausen jumps, principally from amorphous tag wires with high permeability that exhibit reentrant flux reversal. When wires of this type are attached to concealed treatment devices such as catheters, interrogation or scanning of the tag wire by a low frequency ac magnetic field affords an accurate means for locating the treatment devices using a sensor coil to detect the magnetic field signal from the wire locating tag. The strength of the field detected by the position of a sensor coil with respect to the locator tag is used to determine the location of the tag. A favorable signal to noise detection ration is obtained as the signal emitted by the wire is at a very high frequency compared to that of the frequency of the interrogation field.Type: GrantFiled: October 27, 2000Date of Patent: January 8, 2002Assignee: International Business Machines CorporationInventors: Robert J. Von Gutfeld, James F. Ziegler, Scott J. McAllister, James H. Anderson, John C. Murphy, Matthias D. Ziegler
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Publication number: 20010055864Abstract: Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electromechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electromechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.Type: ApplicationFiled: April 23, 2001Publication date: December 27, 2001Applicant: IBM CorporationInventors: Kevin K. Chan, Christopher Jhanes, Leathen Shi, James L. Speidell, James F. Ziegler
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Publication number: 20010020878Abstract: Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: ApplicationFiled: January 30, 2001Publication date: September 13, 2001Inventors: James L. Speidell, James F. Ziegler
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Publication number: 20010016367Abstract: This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: ApplicationFiled: December 28, 2000Publication date: August 23, 2001Inventor: James F. Ziegler
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Patent number: 6275122Abstract: Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: GrantFiled: August 17, 1999Date of Patent: August 14, 2001Assignee: International Business Machines CorporationInventors: James L. Speidell, James F. Ziegler
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Patent number: 6262464Abstract: Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electro-mechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.Type: GrantFiled: June 19, 2000Date of Patent: July 17, 2001Assignee: International Business Machines CorporationInventors: Kevin K. Chan, Christopher Jhanes, Leathen Shi, James L. Speidell, James F. Ziegler
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Patent number: 6238946Abstract: This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.Type: GrantFiled: August 17, 1999Date of Patent: May 29, 2001Assignee: International Business Machines CorporationInventor: James F. Ziegler
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Patent number: 4528212Abstract: Coated ceramic substrates or structures having a barrier layer against alpha-particle radiation and integrated circuits prepared therefrom. Ceramic surfaces having reduced or modified surface roughness are also provided.Type: GrantFiled: July 22, 1982Date of Patent: July 9, 1985Assignees: International Business Machines Corporation, United Kingdom Atomic Energy AuthorityInventors: James A. Cairns, James F. Ziegler
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Patent number: 4111720Abstract: A method for forming a non-epitaxial bipolar integrated circuit comprising first forming in a silicon substrate of one-type of conductivity, recessed silicon dioxide regions extending into the substrate and laterally enclosing at least one silicon substrate region of said one-type conductivity. Then, forming by ion implantation the first region of opposite-type conductivity which is fully enclosed laterally by said recessed silicon dioxide. This region is formed by directing a beam of ions of opposite-type conductivity impurity at said enclosed silicon region at such energy and dosage levels that the opposite conductivity-type impurity introduced into the substrate in said region will have a concentration peak at a point below the surface of this first region. Then, a region of said one-type conductivity is formed which extends from the surface into said first opposite-type conductivity region to a point between said concentration peak and said surface.Type: GrantFiled: March 31, 1977Date of Patent: September 5, 1978Assignee: International Business Machines CorporationInventors: Alwin E. Michel, Robert O. Schwenker, James F. Ziegler
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Patent number: 4110625Abstract: Practice of this disclosure obtains a measure of the dose or fluence of implanted ions into a target for device fabrication by monitoring emitted X-rays. Illustratively, ion beams of B.sup.+, P.sup.+ or As.sup.+ have been implanted into Si over the ion energy range of 20 KeV to 2800 KeV and the data of counts of emitted X-rays has been correlated with both the solid angle intercepted by the counter and the charge intercepted by the target. In particular, the low energy soft Si(L) X-rays at 136A have been discovered for the practice of this disclosure to be very intense. The principles of this disclosure are especially applicable for very low ion doses, i.e. .ltorsim. 10.sup.12 /cm.sup.2 where charge integration is not feasible; and for neutral beam implantation with currents above about 2 milliamperes. Reproducible semiconductor devices can be fabricated by practice of this disclosure, i.e., with substantially reproducible operational characteristics, e.g.Type: GrantFiled: December 20, 1976Date of Patent: August 29, 1978Assignee: International Business Machines CorporationInventors: James A. Cainns, Allen Lurio, James F. Ziegler
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Patent number: 4053925Abstract: The device structure is a bi-polar transistor having a region of inert atoms located in the collector adjacent to the base-collector junction. Another embodiment of the invention is a complementary insulated gate field effect transistor (IGFET) structure having N and P channel IGFETs with regions of implanted ions beneath the source and drain of one or both transistors, and/or annular regions projecting inwardly from the surface that surround or separate the different types of IGFETs.Type: GrantFiled: August 7, 1975Date of Patent: October 11, 1977Assignee: IBM CorporationInventors: Peter Burr, Richard C. Joy, James F. Ziegler