Patents by Inventor James Francis Mack
James Francis Mack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112945Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: December 14, 2023Publication date: April 4, 2024Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 11859307Abstract: The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.Type: GrantFiled: September 24, 2020Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Edric Tong, James Francis Mack, Paul Brillhart
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Patent number: 11848226Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: February 23, 2021Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Publication number: 20210175115Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: February 23, 2021Publication date: June 10, 2021Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 10930543Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: August 23, 2018Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Publication number: 20210002786Abstract: The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.Type: ApplicationFiled: September 24, 2020Publication date: January 7, 2021Inventors: Edric TONG, James Francis MACK, Paul BRILLHART
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Patent number: 10883190Abstract: The embodiments described herein generally relate to a stem assembly for coupling a susceptor to a process chamber. The stem assembly includes a pivot mechanism, a first flexible seal coupled to the pivot mechanism, a second flexible seal coupled to a plate on a first side of the plate, the plate having a second side coupled to the first flexible seal, a housing coupled to the second flexible seal, and a motion assembly adapted to move the housing in an X axis and a Y axis, and position the susceptor angularly relative to an X-Y plane of the process chamber.Type: GrantFiled: July 10, 2015Date of Patent: January 5, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Edric Tong, James Francis Mack, Paul Brillhart
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Patent number: 10727093Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.Type: GrantFiled: March 12, 2015Date of Patent: July 28, 2020Assignee: Applied Materials, Inc.Inventors: Paul Brillhart, Joseph M. Ranish, Aaron Muir Hunter, Edric Tong, James Francis Mack, Kin Pong Lo, Errol Antonio C. Sanchez, Zhiyuan Ye, Anzhong Chang
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Patent number: 10458040Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.Type: GrantFiled: November 10, 2017Date of Patent: October 29, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack, Zhiyuan Ye, Kartik Shah, Errol Antonio C. Sanchez, David K. Carlson, Satheesh Kuppurao, Joseph M. Ranish
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Patent number: 10306708Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.Type: GrantFiled: November 28, 2017Date of Patent: May 28, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Kin Pong Lo, Paul Brillhart, Balasubramanian Ramachandran, Satheesh Kuppurao, Daniel Redfield, Joseph M. Ranish, James Francis Mack, Kailash Kiran Patalay, Michael Olsen, Eddie Feigel, Richard Halpin, Brett Vetorino
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Publication number: 20180366363Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: August 23, 2018Publication date: December 20, 2018Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 10061208Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.Type: GrantFiled: January 3, 2018Date of Patent: August 28, 2018Assignee: APPLIED MATERIALS, INC.Inventors: James Francis Mack, Stephen Moffatt
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Patent number: 10062598Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: April 28, 2015Date of Patent: August 28, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Publication number: 20180143537Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.Type: ApplicationFiled: January 3, 2018Publication date: May 24, 2018Inventors: James Francis MACK, Stephen MOFFATT
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Publication number: 20180084610Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.Type: ApplicationFiled: November 28, 2017Publication date: March 22, 2018Inventors: Kin Pong LO, Paul BRILLHART, Ramachandran BALASUBRAMANIAN, Satheesh KUPPURAO, Daniel REDFIELD, Joseph M. RANISH, James Francis MACK, Kailash Kiran PATALAY, Michael OLSEN, Eddie FEIGEL, Richard HALPIN, Brett VETORINO
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Publication number: 20180066382Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.Type: ApplicationFiled: November 10, 2017Publication date: March 8, 2018Inventors: Paul BRILLHART, Anzhong CHANG, Edric TONG, Kin Pong LO, James Francis MACK, Zhiyuan YE, Kartik SHAH, Errol Antonio C. Sanchez, David K. CARLSON, Satheesh KUPPURAO, Joseph M. RANISH
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Patent number: 9869938Abstract: A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a STED depleted laser beam. At least two STED depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. A reactant or reactants introduced to the reaction region is excited by the combined energy of the excitation portions of the two beams, but not excited outside of the overlap region of the two excitation portions of the beams. A reactant is caused to occur only in the overlap region. The overlap region may be less that 20 nm wide, and less than 1 nm in width, to enable the formation of substrate features, or the change in the substrate, in a small area.Type: GrantFiled: August 5, 2014Date of Patent: January 16, 2018Assignee: APPLIED MATERIALS, INC.Inventors: James Francis Mack, Stephen Moffatt
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Patent number: 9845550Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.Type: GrantFiled: February 3, 2015Date of Patent: December 19, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack, Zhiyuan Ye, Kartik Shah, Errol Antonio C. Sanchez, David K. Carlson, Satheesh Kuppurao, Joseph M. Ranish
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Patent number: 9832816Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.Type: GrantFiled: April 22, 2014Date of Patent: November 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Kin Pong Lo, Paul Brillhart, Balasubramanian Ramachandran, Satheesh Kuppurao, Daniel Redfield, Joseph M. Ranish, James Francis Mack, Kailash Kiran Patalay, Michael Olsen, Eddie Feigel, Richard Halpin, Brett Vetorino
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Patent number: 9466500Abstract: An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of reactants, features can be directly formed on the workpiece on a sub-micron size, below the resolution of current photolithography. The features may be etched into a workpiece, or formed thereover.Type: GrantFiled: September 16, 2014Date of Patent: October 11, 2016Assignee: APPLIED MATERIALS, INC.Inventors: James Francis Mack, Stephen Moffatt