Abstract: A yield expectation determination is dynamically provided during manufacturing of a lot of integrated circuits. In one embodiment, the determination includes initially establishing a yield expectation for a lot, which can be based on a process grade, and adjusting the yield expectation during manufacturing based on test data from the kerf of a wafer. In addition, the yield expectation can be adjusted based on inspection data from optical and SEM inspection tools during manufacturing. Correlation coefficient models that correlate kerf data and inspection data to a yield expectation adjustment are used to dynamically adjust the yield expectation, resulting in a more accurate yield projection during manufacturing. The correlation coefficient models and/or process grade estimates are updated based on actual yield from a previous lot, thus further improving yield expectation accuracy.

Abstract: In a plasma or RIE etching tool using a uniquely designed annulus around a wafer supporting pedestal, it has been found that the introduction of one or more gases in the region immediately adjacent the annulus controls the amount of etching of features in that region in the surface of the wafer mounted on the pedestal. By so controlling the amount of gas in this region, the slope of the walls of the etched features can be also controlled.