Abstract: The present invention provides a method for controlling the mechanical stresses at the interfaces of the metal and dielectric materials in the printed wiring substrates of high density interconnects. The invention enables the minimization of cracking due to these stresses and does so in an economically attractive process that is able to meet the needs of today's high density interconnect applications. In one embodiment, the method of the present invention dispenses mechanical stresses in a high density interconnect printed wiring board substrate having a first patterned conductive layer formed over an upper surface of the substrate. The patterned conductive layer includes multiple conductive lines each having edges that define the boundaries of the conductive lines. The method of the invention forms a composite dielectric layer over the first patterned conductive layer and between the edges of the conductive layer.

Abstract: A method for testing for open circuits on a common circuit base having pads for making electrical contact to the common circuit base on both the top and bottom of the circuit base. The common circuit base includes a thin film metal interconnect structure formed on its upper surface and the thin film interconnect structure including an upper dielectric layer deposited over a thin film metalization layer that has contact openings etched through the dielectric layer at selected locations for the formation of contact pads.

Abstract: A method for rendering a surface of a contact rough includes submerging the surface of the contact in an electroplating bath having a dissolved metal salt, and pulsing an electric current through the contact and the bath to form a rough metallic structure on the surface of the contact.

Abstract: A method for forming a planarized thin film dielectric film on a surface of a common circuit base upon which one or more integrated circuits are to be attached. The common circuit base includes raised features formed over its surface such that the raised features define a trench area between them. The method includes the steps of forming a first layer of the dielectric film over the common circuit base and over the raised features and the trench, then patterning the newly formed layer to remove portions of the layer formed over the raised features and expose the raised features. After the layer is patterned, formation of the dielectric film is completed by forming a second layer of the dielectric film over the patterned first layer.

Abstract: A method for rendering a surface of a contact rough includes submerging the surface of the contact in an electroplating bath having a dissolved metal salt, and pulsing an electric current through the contact and the bath to form a rough metallic structure on the surface of the contact.