Patents by Inventor James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs

James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4389849
    Abstract: A long lifetime Stirling cycle cryogenic cooler particularly adapted for space applications comprised of a compressor section (10) centrally aligned end to end with an expansion section (12) and respectively including a reciprocating compressor piston (14) and displacer (16) radially suspended in interconnecting cylindrical housings (18, 20) by active magnetic bearings (26, 28, 30, 32) and having adjacent reduced clearance regions (82, 84, 108) so as to be in non-contacting relationship therewith and wherein one or more of these regions operate as clearance seals. The piston (14) and displacer (16) are reciprocated in their housings (18, 20) by linear drive motors (48, 52) to vary the volume of respectively adjacent compression and expansion spaces (44, 46) which contain a gaseous working fluid and a thermal regenerator (95) to effect Stirling cycle cryogenic cooling.
    Type: Grant
    Filed: October 2, 1981
    Date of Patent: June 28, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Max G. Gasser, Allan Sherman, Philip A. Studer, Alexander Daniels, Michael P. Goldowsky
  • Patent number: 4388171
    Abstract: The yield of organic extract from the supercritical extraction of coal with larger diameter organic solvents such as toluene is increased by use of a minor amount of from 0.1 to 10% by weight of a second solvent such as methanol having a molecular diameter significantly smaller than the average pore diameter of the coal.
    Type: Grant
    Filed: October 30, 1981
    Date of Patent: June 14, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, William H. Corcoran, William S. Fong, Puvin Pichaichanarong, Paul C. F. Chan, Daniel D. Lawson
  • Patent number: 4388346
    Abstract: Contact electrodes on a semiconductor device (50) such as a photovoltaic solar cell is formed by screening through a mask (38) onto a surface (40) a pattern of ink containing a dispersion of lower melting, sinterable metal (tin) coated base metal (copper) particles dispersed in a liquid vehicle including a vaporizable binder polymer and a fluorocarbon polymer. On firing the screen coated device (46) in an oven (48) the binder polymer is vaporized, the fluorocarbon vapors etch the surface and the coated metal particles sinter without being oxidized to form an adherent, coherent, contact electrode (53).
    Type: Grant
    Filed: November 25, 1981
    Date of Patent: June 14, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Donald B. Bickler
  • Patent number: 4386157
    Abstract: A method and apparatus are disclosed for determining the concentration of coliform bacteria in a sample. The sample containing the coliform bacteria is cultured in a liquid growth medium. The cultured bacteria produce hydrogen and the hydrogen is vented to a second cell containing a buffer solution in which the hydrogen dissolves. By measuring the potential change in the buffer solution caused by the hydrogen, as a function of time, the initial concentration of bacteria in the sample is determined. Alternatively, the potential change in the buffer solution can be compared with the potential change in the liquid growth medium to verify that the potential change in the liquid growth medium is produced primarily by the hydrogen gas produced by the coliform bacteria.
    Type: Grant
    Filed: October 26, 1981
    Date of Patent: May 31, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Kenji Nishioka, David A. Nibley, Eldon L. Jeffers, Richard L. Brooks
  • Patent number: 4381333
    Abstract: A high temperature stable and solar radiation stable thermal control coating either useful as such, applied directly to a member to be protected, or applied as a coating on a re-usable surface insulation (RSI) has a base coat layer and an overlay glass layer. The base coat layer has a high emittance, and the overlay layer is formed from discrete, but sintered together glass particles to give the overlay layer a high scattering coefficient. The resulting two-layer space and thermal control coating has an absorptivity-to-emissivity ratio of less than or equal to 0.4 at room temperature, with an emittance of 0.8 at 1200.degree. F. It is capable of exposure to either solar radiation or temperatures as high as 2000.degree. F. without significant degradation. When used as a coating on a silica substrate to give an RSI structure, the coatings of this invention show significantly less reduction in emittance after long term convective heating and less residual strain than prior art coatings for RSI structures.
    Type: Grant
    Filed: October 2, 1981
    Date of Patent: April 26, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, David A. Stewart, Howard E. Goldstein, Daniel B. Leiser
  • Patent number: 4375396
    Abstract: A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping and end (12) of a phosphor bronze wire (14) into a dilute solution (16) of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire (14) and another electrode (18) in the solution is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.
    Type: Grant
    Filed: November 17, 1981
    Date of Patent: March 1, 1983
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: James M. Administrator of National Aeronautics and Space Administration, with respect to an invention of Beggs, Gordon Green, Robert J. Mattauch
  • Patent number: 4373989
    Abstract: A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.
    Type: Grant
    Filed: November 30, 1981
    Date of Patent: February 15, 1983
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Robert J. Mattauch, Alan C. Seabaugh
  • Patent number: 4344787
    Abstract: A system is described for forming hollow spheres containing pressured gas, which includes a cylinder device (14) containing a molten solid material (20) and having a first nozzle (18) at its end, and a second gas nozzle (24) lying slightly upstream from the tip of the first nozzle and connected to a source (26) that applies pressured filler gas that is to fill the hollow spheres. High pressure is applied to the molten metal, as by moving a piston (22) within the cylinder device, to force the molten material out of the first nozzle and the same time pressured gas fills the center of the extruded hollow liquid pipe that breaks into hollow spheres (12a). The environment (54) outside the nozzles contains gas at a high pressure such as 100 atmospheres, the gas is supplied to the gas nozzle (24) at a slightly higher pressure such as 101 atmospheres, and the pressure applied to the molten material (20) is at a still higher pressure such as 110 atmospheres.
    Type: Grant
    Filed: September 18, 1981
    Date of Patent: August 17, 1982
    Inventors: James M. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Beggs, Taylor G. Wang, Daniel D. Elleman