Abstract: A composite film on a substrate having a first magnetostrictive, magnetoresistive, anisotropic ferromagnetic thin-film provided on that substrate with a second ferromagnetic thin-film provided immediately thereon which is also magnetorestrictive, magnetoresistive, anisotropic, with a composition differing from the first ferromagnetic thin-film. Various parameters of said first and second ferromagnetic thin-films are selected to provide such a composite film with little or no magnetostriction. Such composite films can be used in various devices.

Abstract: A magnetic field sensor having a junction structure in a sensor cell using a dielectric intermediate separating material with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film which is also on a base electrode, and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-film but of differing rotational responses to external magnetic fields. Similar structures have a separated film in each that can be interconnected to one another with the interconnections extending at least in part substantially parallel to the widths of the separated films, and the separated films can have lengths with gradually narrowing widths to the ends thereof as can the base electrode. One or more planar coils can be supported at least in part on the separated films.

Abstract: A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Abstract: A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

Abstract: A magnetic field sensor having a plurality of interconnected magnetoresistive magnetic field sensing structures with at least one thereof having a permeable material mass adjacent thereto to shield it from externally applied magnetic fields. Another has a shunting structure adjacent a side thereof to remove a fraction of externally applied magnetic fields from affecting same.

Abstract: A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses. The magnetic material mass being used for shielding can be divided into two masses with one of those masses farthest from the gap serving as the shield.

Abstract: A magnetoresistive layered structure having a pair of magnetoresistive, anisotropic ferromagnetic thin-films separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein.

Abstract: A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.

Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.

Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.

Abstract: A method for storing selected magnetic states in magnetic bit structures so as to assure establishment of the desired state therein. A first word line current, used for storing a magnetic state, is followed by providing a second word line current. The second line current assures establishment of the desired state in the magnetic bit structure by overcoming any pinning of a magnetic wall.

Abstract: A component metallization interconnection system in a monolithic integrated circuit system for providing electrical interconnections between circuit components and for providing magnetic interaction regions for information storage.

Abstract: A digital memory based on a memory cell having two magnetoresistive, ferromagnetic film portions separated by an intermediate layer, all of limited thickness. Each of the magnetoresistive film portions is less than 300 .ANG. thick and the intermediate layer is less than 100 .ANG. thick. Conductive wordlines separated from the upper magnetoresistive film by an insulating layer are utilized, in conjunction with sense current which passes through the cells, to select particular cells for read or write operations.

Abstract: A memory cell having a plurality of storage structures in a differential arrangement. Two multilayered magnetoresistive memory cells are placed in a bridge arrangement with two impedance devices. The memory cells have one bridge juncture in common. Switches are connected to at least two of the four bridge junctures to permit the writing or reading of the magnetic state of the storage cells. The bridge arrangement combined with the appropriate switching action allows for a near doubling of the magnitude of the output sense signal while reducing the noise component of such signal.

Abstract: A digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.

Abstract: Disclosed is a method for removing a hybrid or integrated circuit chip soldered to a support structure. An electrical energy source is applied to the hybrid circuit chip for raising the temperature of the circuit chip sufficiently so as to melt the solderable material which interconnects the chip to the support structure. When the solderable material is melted, the circuit chip may then be removed from the support structure.

Abstract: A hybrid or integrated circuit chip is provided with a heating means integral therewith. The heating means is made accessible for application of an external electrical energy source so as to permit removal of the circuit chip after previously being soldered to a support structure or permit soldering of a circuit chip to the support structure.

Abstract: A field-effect transistor device is provided having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.