Patents by Inventor James Mavrinac

James Mavrinac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to remove Ni and Pt residues for NiPtSi application using chlorine gas
    Patent number: 8859431
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: October 14, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • Method for cleaning platinum residues on a semiconductor substrate
    Patent number: 8784572
    Abstract: A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: July 22, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Anh Duong, Sean Barstow, Olov Karlsson, Bei Li, James Mavrinac
  • Process to remove Ni and Pt residues for NiPtSi application using Chlorine gas
    Publication number: 20130267091
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Application
    Filed: June 6, 2013
    Publication date: October 10, 2013
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • Process to remove Ni and Pt residues for NiPtSi applications
    Patent number: 8513117
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: August 20, 2013
    Assignees: Intermolecular, Inc.
    Inventors: Anh Duong, Sean Barstow, Clemens Fitz, John Foster, Olov Karlsson, Bei Li, James Mavrinac
  • Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas
    Patent number: 8466058
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: June 18, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS
    Publication number: 20130122670
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
    Type: Application
    Filed: November 14, 2011
    Publication date: May 16, 2013
    Applicant: Intermolecular, Inc.
    Inventors: Anh Duong, John Foster, Olov Karlsson, James Mavrinac, Usha Raghuram
  • PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS
    Publication number: 20130122671
    Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 16, 2013
    Applicants: Globalfoundries, Intermolecular, Inc.
    Inventors: Anh Duong, Sean Barstow, Clemens Fitz, John Foster, Olov Karlsson, Bei Li, James Mavrinac
  • Method for Cleaning Platinum Residues on a Semiconductor Substrate
    Publication number: 20130098393
    Abstract: A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.
    Type: Application
    Filed: October 19, 2011
    Publication date: April 25, 2013
    Applicant: INTERMOLECULAR, INC.
    Inventors: Anh Duong, Sean Barstow, Olov Karlsson, Bei Li, James Mavrinac