Abstract: A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Abstract: A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Abstract: A plurality of autonomous control processes, with each controlling one or more components of the material transport (or processing) system, is used to radically simplify the controller software. Each autonomous control process is responsible for the actions of only a subset of the cluster tool components. For example, in one embodiment, a separate autonomous control process is used to control each automated component in the material handling system. However, other embodiments in which a control process controls a plurality of components are also contemplated.

Abstract: A plurality of autonomous control processes, with each controlling one or more components of the material transport (or processing) system, is used to radically simplify the controller software. Each autonomous control process is responsible for the actions of only a subset of the cluster tool components. For example, in one embodiment, a separate autonomous control process is used to control each automated component in the material handling system. However, other embodiments in which a control process controls a plurality of components are also contemplated. The control processes can also be implemented as rules-based machines, determining the proper action based on a set of fixed or programmable rules. Alternatively, the control processes may also execute traditional software algorithms. The control processes are designed such that, together they achieve the process flow and throughput requirements previously achieved via a single control process.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.