Abstract: A method for programming a memory cell having more than two possible states to a desired state. The method includes applying a programming pulse to the memory cell. The change in the amount of charge stored by the memory cell caused by applying the programming pulse to the memory cell is sensed. The control engine determines characterization information indicative of programming characteristics of the memory cell in response to the detected change in the amount of charge stored by the memory cell. The control engine then uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.

Abstract: In a memory device including an array of memory cells, each memory cell having more than two possible states, a method for programming a memory cell to a desired state. The method comprises a control engine programming a subset of the array of memory cells. Characterization information is determined from the step of programming the subset, wherein the characterization information indicates programming characteristics of a representative memory cell of the array of memory cells. The control engine then uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.