Patents by Inventor James P. Levin
James P. Levin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9996000Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: April 8, 2016Date of Patent: June 12, 2018Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Patent number: 9989843Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: April 8, 2016Date of Patent: June 5, 2018Assignees: International Business Machines Corporation, Toppan Printing Co., Ltd.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Publication number: 20160224720Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Publication number: 20160223902Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: April 8, 2016Publication date: August 4, 2016Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Patent number: 9372394Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: GrantFiled: January 24, 2014Date of Patent: June 21, 2016Assignees: International Business Machines Corporation, Toppan Printing CO., LTD.Inventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, Jr., Steven C. Nash
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Publication number: 20150212405Abstract: Aspects of the present invention relate to a test photomask and a method for evaluating critical dimension changes in the test photomask. Various embodiments include a test photomask. The test photomask includes a plurality of cells having a varied density pattern. The plurality of cells include a first group of cells arranged along a first line, the first group of cells having a first combined density ratio. The plurality of cells also include a second group of cells arranged along a second line, the second group of cells having a second combined density ratio. In the plurality of cells, the second combined density ratio for the second group of cells is equal to the first combined density ratio of the first group of cells. The varied density pattern is configured to substantially neutralize fogging effects.Type: ApplicationFiled: January 24, 2014Publication date: July 30, 2015Applicants: Toppan Printing Co., Ltd., International Business Machines CorporationInventors: Brian N. Caldwell, Yuki Fujita, Raymond W. Jeffer, James P. Levin, Joseph L. Malenfant, JR., Steven C. Nash
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Patent number: 7754394Abstract: Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.Type: GrantFiled: November 14, 2006Date of Patent: July 13, 2010Assignee: International Business Machines CorporationInventors: Shaun B Crawford, Thomas B Faure, Cuc K Huynh, James P Levin
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Publication number: 20080113275Abstract: Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.Type: ApplicationFiled: November 14, 2006Publication date: May 15, 2008Applicant: International Business Machines CorporationInventors: Shaun B. Crawford, Thomas B. Faure, Cuc K. Huynh, James P. Levin
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Patent number: 6777137Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.Type: GrantFiled: July 10, 2002Date of Patent: August 17, 2004Assignee: International Business Machines CorporationInventors: Emily E. Fisch, Louis M. Kindt, James P. Levin, Michael R. Schmidt, Carey T. Williams
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Publication number: 20040009408Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.Type: ApplicationFiled: July 10, 2002Publication date: January 15, 2004Applicant: International Business Machines CorporationInventors: Emily E. Fisch, Louis M. Kindt, James P. Levin, Michael R. Schmidt, Carey T. Williams
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Patent number: 6426177Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: GrantFiled: December 27, 2000Date of Patent: July 30, 2002Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Steven D. Flanders, Lyndon S. Gibbs, James P. Levin, Harold G. Linde, Joseph L. Malenfant, Jr., Jeffrey F. Shepard
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Patent number: 6270949Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: GrantFiled: April 11, 2000Date of Patent: August 7, 2001Assignee: International Business Machines CorporationInventors: Thomas B. Faure, Steven D. Flanders, James P. Levin, Harold G. Linde, Jeffrey F. Shepard
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Publication number: 20010005571Abstract: A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).Type: ApplicationFiled: December 27, 2000Publication date: June 28, 2001Inventors: Thomas B. Faure, Steven D. Flanders, Lyndon S. Gibbs, James P. Levin, Harold G. Linde, Joseph L. Malenfant, Jeffrey F. Shepard
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Patent number: 5159170Abstract: A transmission grid is disposed in a conventional focussed ion beam system which includes an ion beam source emitter or ion gun, electrodes to turn the ion beam off and on, a beam defining aperture and electrostatic lenses to focus the ion beam onto a target. The elements of the ion beam system are disposed in a chamber which is provided with an inlet port and an outlet port. Gas is introduced into chamber via the inlet port where it is ionized by the ion beam into an ion plasma to be used to deposit materials onto the target. The transmission grid, is interposed which is a fine mesh, passive element is located in the path of the ion beam and reduces the ion beam current density by a desired value. The transmission grid may be configured with a variety of different transmissions so the current density can be adjusted in different increments depending on the gas/type of deposition to be performed.Type: GrantFiled: April 26, 1991Date of Patent: October 27, 1992Assignee: International Business Machines CorporationInventors: James P. Levin, Alfred Wagner
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Patent number: 5149974Abstract: An ion beam structure includes a gas container, such as a cylindrical can having first and second apertures through the center of the top and bottom walls respectively of the container such that a narrow ion beam is passed through the apertures and the center axis of the can and onto a target specimen such as a mask or chip or other article of manufacture disposed closely below the bottom of the can. The can may further include deflection means for applying voltages and/or magnetic fields to locations on the can (i.e., top, bottom, sides) to direct secondary charged particles such as electrons emitted from the specimen onto an electron detection means such that the structure functions as an imaging system. The electric and/or magnetic fields may be employed to increase the collection efficiency of the detector and thereby improve the quality of the image by increasing the signal to noise ratio.Type: GrantFiled: October 29, 1990Date of Patent: September 22, 1992Assignee: International Business Machines CorporationInventors: Steven J. Kirch, James P. Levin, Alfred Wagner
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Patent number: 4388386Abstract: A method for marking a mask set to insure minimum mismatch between the masks when they are assembled into a set. Each mask in the set is evaluated against a known fixed standard, identified and marked such that when the set is assembled and utilized to produce an integrated circuit minimum mismatch between each element in each mask in the set will be realized.Type: GrantFiled: June 7, 1982Date of Patent: June 14, 1983Assignee: International Business Machines CorporationInventors: Bruce D. King, James P. Levin