Abstract: A computer system includes an interface and a processor. The interface is adapted to receive a request from another computer system for identification of the first computer system. The adapter also furnishes a hash value that identifies the first computer system to the other computer system. The processor is coupled to the interface and is adapted to encrypt an identifier that identifies the first computer system with a key associated with the other computer system to provide the hash value.

Abstract: A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.

Abstract: A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.

Abstract: A method for programming an array of memory cells wherein each cell may be placed in more than two states. The method comprises the steps of 1) selecting a plurality of different programming voltage levels wherein each programming voltage level is associated with a corresponding one of a plurality of states, and 2) applying a plurality of programming pulses to selected subsets of the array of memory cells, wherein each programming pulse has one of the programming voltage levels and one of a corresponding plurality of pulse widths such that each of the memory cells of a corresponding one of the selected subsets are programmed directly to a corresponding one of the plurality of states by a corresponding programming pulse.

Abstract: A method for storing a charge on memory devices which includes the steps of providing a first charging pulse to a memory device to charge the device to a first level less than a final level; testing the value of the charge to determine whether the charge is greater than the first level; if the value of the charge is less than the first level, providing a second set of charging pulses to the memory device, each of the pulses of the second set of pulses having a duration which is a fraction of the duration of the first pulse and a value sufficient to charge the device to the first level; testing the value of the charge to determine whether the charge is greater than the first level after each pulse of the second set of pulses; and once the charge has tested greater than the first level, providing a third set of charging pulses to terminals of the memory device, each of the pulses of the third set of pulses having a duration which is a fraction of the duration of the pulses of the second set of pulses and a valu

Abstract: A method for storing a charge on memory devices which includes the steps of providing a first charging pulse to a memory device to charge the device to a first level less than a final level; testing the value of the charge to determine whether the charge is greater than the first level; if the value of the charge is less than the first level, providing a second set of charging pulses to the memory device, each of the pulses of the second set of pulses having a duration which is a fraction of the duration of the first pulse and a value sufficient to charge the device to the first level; testing the value of the charge to determine whether the charge is greater than the first level after each pulse of the second set of pulses; and once the charge has tested greater than the first level, providing a third set of charging pulses to terminals of the memory device, each of the pulses of the third set of pulses having a duration which is a fraction of the duration of the pulses of the second set of pulses and a valu

Abstract: A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.

Abstract: A method and circuitry for programming a memory cell to one of at least three amounts of charge. The amount of charge placed in the memory cell is increased by increasing the voltage level of a programming pulse applied to the memory cell.